PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF 391 Epibase power darlington transistors (62.5 W) 25C. D M@@ 6235605 0004391 1 MESIEG. | D ~ 7-33-31 BD 644 BD 646 BD 648 BD 650 BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting area. These darlington transistors for AF applications are outstanding for particularly high current gain. Together with BD 643, BD 645, BD 647, and BD 649, they are particularly suitable for use as complementary AF push-pull output stages, ~ Type Ordering code BD 644 BD 644/8D 643 paired BD 646 BD 646/BD 645 paired BD 648 BD 648/BD 647 paired BD 650 BD 650/8D 649 paired Insulating nipple Mica washer Spring washer A3 DIN 137 062702-D230 Q62702-D235 Q62702-D232 062702-D236 062702-D234 062702-D237 062702-D375 062702-D376 062901 -B55 Q62901-B52 Q62902-B63 Dimensional drawings in preparation. Maximum ratings Collector-emitter voltage Collector-base voitage Base-emitter voltage Collector current Sensing mark 24, be, t g r ! 13521 | [yf $y Gee 3 ay } p a8 an 13 15,4203 Approx. weight 18 g. Dimensions in mm BD 644| BD 646| BD 648| BD 650 Vero | 45 Vego | 45 Veso | 5 -, | 8 Collector peak current (t < 10 ms) -Ioy | 12 Base current Ip 150 Storage temperature range Tetg Junction temperature Tj 150 Total power dissipation (Tease & 25C, Veg S$ 10 V) Prot 62,5 Thermal resistance Junction to ambient air Rina | $80 Junction to case!! Rinse | $2 60 80 60 80 5 5 8 8 12 12 150 150 -55 to +150 150 150 62,5 62,5 $80 | 80 S2 $2 100 100 5 8 12 150 150 62,5 <80 $2 = d6dg>><<< ew 1) For insulated mounting: If the mica washer Q62901-8 52 (50 to 90 um) and the insulating nipple | Q62901-B 56 are used this value increases by 4 K/W, and with grease by 2 K/W. . 1814 D-03 Pare 437 re TE cet eybead a T-33-31 25C D MM 4235605 0004392 O MBSIEG __ .. 25 04392. 0 Bp 644 SIEMENS AKTIENGESELLSCHAF aD eae BD 650 Static characteristics (Tamp = 25C) BD 644 | BD 646 | BD 648 | BD 650 Collector cutoff current (Vop = Veamax) -Icgo <0.2 <0.2 <0.2 <0.2 mA (Vos = Voamaxi Tamb = 100C) IcR0 <2 <2 <2 <2 mA Collector cutoff current (Vee = 0.5 Veemax) -Iceq <0.5 <0.5 <0.5 <0.5 mA Emitter cutoff current (Veg = 5 V) -lkeso <5 <5 <5 <5 mA Coliector-emitter breakdown voltage (fg = 100 mA)t) Viaryceo| >45 >60 >80 >100 |V Collector-base breakdown voltage Ue =5 mA) Vipriceo >45 >60 >80 >100 Emitter-base breakdown voltage (J; = 2 mA) Viaryeso| >5 >5 >5 >5 DC current gain (~Ic = 0.5 A; -Voe = 3 V) Ore 1500 1500 1500 1500 - (-le = 3A; -Veg = 3 V) hee >750 >750 >750 >750 ~ (~Ic = 6 A; -Vce = 3 V) beg 750 750 750 750 - Base-emitter forward voltage (~Ig = 3A; -Vce = 3 V) Vee <2.5 <2.5 <2.5 <2.5 Vv Collecor-emitter saturation voltage (-I = 3. A; ~Ip = 12 mA) Vcesat | <2 <2 <2 <2 Forward voltage of the protective diode at; =3A Ve 1.8 1.8 1.8 1.8 Vv Dynamic characteristics (Tapp = 25C) Transition frequency . ([e=3A;-Vce=3V,f=1MHz) fr 7(>1) | 7(>1) | 7(>1)) | 7 (1) | MHz Cutoff frequency in common emitter configuration (lc =3 A; -Vee = 3 V) thte 60 60 60 60 kHz 1) t = 200 us, duty cycle 1% meee. 438 1815 D-04 ante Aa ontwacr Hae Hee 1-33-31, -25C D M 8235605 0004393 2 MBSIEG | oO L., 250 04393 BD 644 BD 646 SIEMENS AKTIENGESELLSCHAF _______ BD 648 BD 650 Total parm. power dissipation versus temperature Permissible pulse load Prot = f (Teasals Vee = parameter K fase =f (0; v= parameter W BD 644, BD 646, BD 648, 8D 650 W BD 644, BD 646, 8D 648, BD G50 80 i Pat fhe Vee=0 to 20V * io" a 10" 20 18 0 10 0 50 100 150C lease Permissible operating range DC current gain he = f (Ic) Io =# (Vee): Tease = 25C, v= 0.01 Vog= 3V; Trove = 28C A BD 644, BD 646, BD 648, 8D 650 BD 644, BD 646, BD 648, BD650 Tg hee W 1000 10 500 300 200 100 50 30 20 10 10? Ty 0 0 10V 10! 10? My 10mA mm Vee e iT , 439 19816 p-05TTT toate netaneen nn arn nen a * 7233-31 8235605 OOO4394 4 MMSIEG. asc ) m 294 A ESTES To BD 644 . BD 646 KTIENGESELLSCHAF STEMENS A BD 648 BD 650 Collector current fp = f (Vee) Collector-emitter saturation voltage Vee = 3 Vi Teasy = 26C Veesat = fic); Ape = 250; Trace = 25C mA BD 644, BD 646, BD 648, BD G50 mA BD 644, BD 646, BD 648, BD 650 10 10 le 7 tof 10 10? i 10 10 10! 10! - Vor > Nee sat 440 181? 0-06