Standard Power MOSFETs RFM4N35, RFM4N40, RFP4N35, RFP4N40 File Number 1491 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 4 A, 350 V and 400 V ros(on): 2Q Features: SOA is power-dissipation limited Nanosecond switching speeds Linear transfer characteristics High input impedance Majority carrier device The RFM4N35 and RFM4N40 and the RFP4N35 and RFP4N40* are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor driv- ers, relay drivers, and drivers for high-power bipolar switch- ing transistors requiring high speed and low gate-drive power. These types can be operated directly from inte- grated circuits. The RFM-series types are supplied in the JEDEC TO- 204AA steel package and the RFP-series types in the JEDEC TO-220AB plastic package. The RFM and RFP series were formerly RCA developmental numbers TA9393 and TA9394, respectively. MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 C): RFM4N35 DRAIN-SOURCE VOLTAGE ........... Voss 350 DRAIN-GATE VOLTAGE (Rgs=1 MQ) ... Vocr 350 GATE-SOURCE VOLTAGE ........-.... Ves DRAIN CURRENT, RMS Continuous ..... Ip Pulsed .............- fom POWER DISSIPATION @ Tc=25C ....... Pr 75 Derate above T-=25C 0.6 OPERATING AND STORAGE TEMPERATURE ..............005- T,. Tstg = 3-388 TERMINAL DIAGRAM Oo $s 92CS -33741 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS RFM4N35 DRAIN RFMAN40 source (FLANGE) GATE 92CS- 37801 RFPANGS JEDEC TO-204AA RFP4N40 SOURCE | _d, (FUANGE) O i TOP VIEW GATE 9208-39528 JEDEC TO-220AB RFM4N40 RFP4N35 RFP4N40 400 350 400 Vv 400 350 400 Vv +20 Vv 4 A 8 A 75 60 60 Ww 0.6 0.48 0.48 wc -5 to +150 eee cStandard Power MOSFETs RFM4N35, RFM4N40, RFP4N35, RFP4N40 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) 25C unless otherwise specified. LIMITS TEST RFM4N35 RFM4N40 CHARACTERISTICS SYMBOL CONDITIONS REP4N35 RFEP4N4O UNITS MIN. MAX. MIN. MAX. Drain-Source Breakdown Voltage BVoss lo=1 mA 350 _ 400 _ Vv Ves=0 Gate Threshold Voltage Ves(th) Ves=Vos 2 4 2 4 Vv \p=1 mA Zero Gate Voltage Drain Current ipss Vos=280 V _ 10 _ _ Vos=320 V _ = = 10 Tc=125C BA Vos=280 V _ 100 _ _ Vos=320 V _ _- = 100 Gate-Source Leakage Current loss Ves=+20 V _ 100 _ 100 nA : Vos=0 Drain-Source On Voltage Vos(on)* Ip=2A _ 4 _ 4 Voes= 10V Vv Ip=4 A _ 12 _ 12 Ves=10V Static Drain-Source On Resistance ps(on)* Ip=2A _ 2 _ 2 Q Ves=10 Vv Forward Transconductance Ors Vos=10 V 1 _ 1 _ mho Ip=2A Input Capacitance Css Vps=25 V = 750 _ 750 Output Capacitance Coss Ves=0V = 150 _ 150 pF Reverse Transfer Capacitance Crss f=1 MHz 100 = 100 Turn-On Delay Time ta(on) Vpn=200 V 12(typ) 45 12(typ) 45 Rise Time t, Ip=2A 42(typ) 60 42(typ) 60 ns Turn-Off Detay Time ta(off) Rgen=Rygs=50 Q 130(typ) 200 130(typ) 200 Fatl Time _ tr Ves=10 V 62(typ) 400 62(typ) 100 Thermal Resistance ROic RFM4N35, _ 1.67 _ 1.67 Junction-to-Case RFM4N40 > RFP4N35, - 2.083 2.083 | C/W RFP4N40 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS TEST RFM4N35 RFM4N40 CHARACTERISTIC SYMBOL CONDITIONS REP4N35 RFEP4N40 UNITS MIN. MAX. MIN. MAX. Diode Forward Voltage Vsp * Isn=2 A _ 1.4 _ 1.4 Vv - lr=4 A Reverse Recovery Time te die/d=100 A/us 800(typ) 800(typ) ns *Pulsed: Pulse duration = 300 ys max., duty cycle = 2% 3-389Standard Power MOSFETs RFM4N35, RFM4N40, RFP4N35, RFP4N40 q 100 . | CASE TEMPERATURE (Tc) * 25C B | (CURVES MUST BE DERATED an LINEARLY WITH INCREASE IN EH | TEMPERATURE) HT ; i 2 i < 10 I i) = e 2 oe z 5. 4 51 ol ORAIN TO SOURCE VOLTAGE (Vps) ~ V 92C8-37040R1 Fig. 1 Maximum operating areas for all types. Vps!oV Ipst mA [vos th)] NORMALIZED GATE THRESHOLD xO CASE TEMPERATURE (Tc I* 92C$-34364R2 JUNCTION TEMPERATURE (1) *C 9205-57048 Fig. 2 Power dissipation vs. temperature derating curve Fig. 3 Typical normalized gate threshold voltage as a function for all types. of junction temperature for ali types. Tpt2 A Ves*t0V Vps*20V PULSE TEST PULSE DURATION =60yuS buTy CYCLE s2% < = 5 oe 4 & z a = 3 3 z z = a w a - a z s SUNCTION TEMPERATURE (Ty) -*C GATE - TO - SOURCE VOLTAGE (Vgg) 92C$-37049 $2CS-37050 Fig. 4 Normalized drain-to-source on resistance to junction Fig. 5 Typical transfer characteristics for all types. temperature for ail types. 3-390400; T Tq T T Yoss b GATE 4 SOURCE 300 VOLTAGE Yoo = Yoss Yoo = Voss | AL = 1008 4 3 Ig (REF) =0.45 mA 1 200 Vos =10V 3 Z, LL 0.75 Voss 0.75 Voss 4 10.50 Voss, 0.59 Voss 0.25 Voss 0.25 Voss: 100 DRAIN SOURCE VOLTAGE Ig (REF) 9 GIREP) ig (CT ig tach Fig. 6 - Normalized switching waveforms for constant gate-current. TIME Micreseconds azcs 37665 Standard Power MOSFETs RFM4N40, RFP4N35, RFP4N40 PULSE TEST PULSE OURATION: BO pS DUTY CYCLE 52% RFM4N35, 8 CASE TEMPERATURE (Tc) = 25C 1 Vegi +20V a Ves= +6V e sz s 3 5 a a So a a $s z <= = S Ves*+5V Vestt+4V 5 10 ORAIN TO SOURCE VOLTAGE (Vpg) V 92CS-37052. Fig. 7 Typical saturation characteristics for all types. Refer to RCA application notes AN-7254 and AN-7260. o n [ tostona} Ons w Q z a - a a w ws 9 z 3 o z a oa Fig. 8 Typical drain-to-source on resistance as a function Veg 210 PULSE TEST To#l25c PULSE DURATION = 80 pS DUTY CYCLE <2% 5 DRAIN CURRENT (Ip) A 92Cs- 37053 of drain current for all types. 2 2 = > w 9g 2 a & g 3 3 z 3 oo a z a = E 2 < ed 3 t Fig. 10 Typical torward transconductance as a function Vos "10 PULSE TEST PULSE DURATION 80 nS DUTY CYCLE <2% DRAIN CURRENT (Ip) A 92C8-37055 of drain current for all types. FREQUENCY (f) = t MHz a 3 wi 9 2 a e < a