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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 74
HMC375LP3 / 375LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
v03.0610
General Description
Features
Functional Diagram
The HMC375LP3 & HMC375LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Ampli ers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This
LNA has been optimized to provide 0.9 dB noise
gure, 17 dB gain and +33 dBm output IP3 from
a single supply of +5V @ 136mA. Input and output
return losses are 14 dB typical with the LNA requiring
minimal external components to optimize the RF input
match, RF ground and DC bias. For applications
which require improved noise gure, please see the
HMC618LP3(E).
Noise Figure: 0.9 dB
Output IP3: +34 dBm
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5V @ 136 mA
50 Ohm Matched Output
Electrical Speci cations, TA = +25° C, Vs = +5V
Typical Applications
The HMC375LP3 / HMC375LP3E is ideal for
basestation receivers:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• DECT
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 1.8 - 1.9 1.9 - 2.0 2.0 - 2.1 2.1 - 2.2 GHz
Gain 16.5 18.5 15.5 17.5 15 17 13 15 dB
Gain Variation Over Temperature 0.014 0.021 0.014 0.021 0.014 0.021 0.014 0.021 dB/°C
Noise Figure 1.0 1.35 0.95 1.2 0.9 1.2 0.9 1.3 dB
Input Return Loss 12 13 14 15 dB
Output Return Loss 13 16 11 8 dB
Reverse Isolation 35 34 34 34 dB
Output Power for
1dB Compression (P1dB) 16 18.5 16 18.5 15 18 14.5 17.5 dBm
Saturated Output Power (Psat) 19.5 19.5 19.5 19.5 dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
34 33.5 33 32.5 dBm
Supply Current (Idd) 136 136 136 136 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
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Broadband Gain & Return Loss
Gain vs. Vdd
Gain vs. Temperature
Reverse Isolation vs. Temperature
Noise Figure vs. Vdd
Noise Figure vs. Temperature
10
12
14
16
18
20
22
24
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
0.5
0.7
0.9
1.1
1.3
1.5
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
12
14
16
18
20
22
1.7 1.8 1.9 2 2.1 2.2
+4.5 V
+5.0 V
+5.5 V
GAIN (dB)
FREQUENCY (GHz)
0.5
0.7
0.9
1.1
1.3
1.5
1.7 1.8 1.9 2 2.1 2.2
+4.5 V
+5.0 V
+5.5 V
NOISE FIGURE (dB)
FREQUENCY (GHz)
-50
-45
-40
-35
-30
-25
-20
-15
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-35
-25
-15
-5
5
15
25
0.5 1 1.5 2 2.5 3
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
HMC375LP3 / 375LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
v03.0610
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 76
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Output IP3 vs. Vdd
Output IP3 vs. Temperature P1dB & PSAT vs. Temperature
P1dB vs. Vdd
-25
-20
-15
-10
-5
0
1.7 1.8 1.9 2 2.1 2.2
+25 C
-40 C
+85 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
30
32
34
36
38
40
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
30
32
34
36
38
40
1.7 1.8 1.9 2 2.1 2.2
+4.5 V
+5.0 V
+5.5 V
IP3 (dBm)
FREQUENCY (GHz)
14
16
18
20
22
24
1.7 1.8 1.9 2 2.1 2.2
+25 C
+85 C
-40 C
COMPRESSION (dBm)
FREQUENCY (GHz)
P1dB
PSAT
12
14
16
18
20
22
24
1.7 1.8 1.9 2 2.1 2.2
+4.5 V
+5.0 V
+5.5 V
OUTPUT P1dB (dBm)
FREQUENCY (GHz)
HMC375LP3 / 375LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
v03.0610
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 77
Typical Supply Current vs. Vdd
Vdd (Vdc) Idd (mA)
+4.5 135
+5.0 136
+5.5 137
Drain Bias Voltage (Vdd1, Vdd2) +8.0 Vdc
RF Input Power (RFIN)(Vs = +5.0 Vdc) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 15.6 mW/°C above 85 °C) 1.015 W
Thermal Resistance
(channel to ground paddle) 64.1 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Absolute Maximum Ratings
Outline Drawing
HMC375LP3 / 375LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
v03.0610
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC375LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 375
XXXX
HMC375LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 375
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 78
Pin Number Function Description Interface Schematic
1, 3, 4, 6-10,
12, 14, 16 N/C No connection necessary.
These pins may be connected to RF/DC ground.
2RFIN
This pin is matched to 50 Ohms with a 13 nH
inductor to ground. See Application Circuit.
5ACG
AC Ground - An external capacitor of 0.01μF to
ground is required for low frequency bypassing.
See Application Circuit for further details.
11 RFOUT This pin is AC coupled and matched to 50 Ohms.
13,15 Vdd2, Vdd1 Power supply voltage. Choke inductor and bypass
capacitor are required. See application circuit.
GND Package bottom must be connected to RF/DC ground.
Pin Descriptions
Application Circuit
Note: L1, L2, L3 and C1 should be located as close to pins as possible.
HMC375LP3 / 375LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
v03.0610
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 79
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 - J4 DC Pin
C1 1000 pF Capacitor, 0402 Pkg.
C2, C3 10000 pF Capacitor, 0603 Pkg.
L1 13nH Inductor, 0402 Pkg.
L2 33nH Inductor, 0603 Pkg.
L3 24nH Inductor, 0402 Pkg.
U1 HMC375LP3 / HMC375LP3E Ampli er
PCB [2] 107514 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Hittite upon request.
List of Materials for Evaluation PCB 107726 [1]
HMC375LP3 / 375LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
v03.0610
