MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz. e Specified 26 Volts, 1490 MHz, Class AB Characteristics: Output Power 30 Watts Gain 9 dB Min @ 30 Watts (PEP) Efficiency 30% Min @ 30 Watts (PEP) Intermodulation Distortion -30 dBc Max @ 30 Watts (PEP) e Third Order Intercept Point 53.5 dBm Typ @ 1490 MHz, Voge = 24 Vde, Ic = 2.5 Ade Characterized with Series Equivalent LargeSignal Parameters from 1400-1600 MHz e Characterized with Small Signal S-Parameters from 1000~2000 MHz Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at all Phase Angles with 3:1 Load VSWR @ 28 Vde, at Rated Output Power Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration e Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF 15030 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON CASE 395C-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 25 Vde Collector-Emitter Voltage Voces 60 Vde Emitter-Base Voitage VeBo 4 Vde Colfector-Current Continuous Ic 10 Adc Total Device Dissipation @ Tc = 25C Pp 125 Watts Derate above 25C 0.71 WrC Storage Temperature Range Tstg ~65 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Resc 1.40 CW ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted.) Characteristic | Symbol | Min Typ Max Unit | OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage Viaryceo 25 29 _ Vde (Ic = 50 mAde, Ip = 0) Collector-Emitter Breakdown Voltage VBR)CES 60 64 _ Vde (Ic = 50 mAdc, Vee = 0) Collector-Emitter Breakdown Voltage ViBR)CER 30 52 - Vde (lc = 50 mAdc, Reg = 100 Q) (continued) REV7 MRF15030 4.2-678 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATAELECTRICAL CHARACTERISTICS continued (T. = 25C unless otherwise noted.) | Characteristic } Symbol } Min Typ | Max | Unit | OFF CHARACTERISTICS continued Emitter-Base Breakdown Voltage ViBRyEBO 4 5 _ Vde (le = 5 mAde, Ic = 0) Collector Cutoff Current Ices _ 10 mAdc (Vice = 30 Vde, Voge = 0) ON CHARACTERISTICS DC Current Gain hee 20 35 80 ~_ (Ice = 1 Ade, Veg = 5 Vde) DYNAMIC CHARACTERISTICS Output Capacitance Cob _ 38 pF (Vcp = 26 Vdc, Ie = 0, f = 1 MHz) FUNCTIONAL TESTS (Figure 12) Common-Emitter Amplifier Power Gain Gpe 9.0 9.6 _ dB (Voc = 26 Vde, Pout = 30 W (PEP), Icg = 125 mA, f; = 1490 MHz, fp = 1490.1 MHz) Collector Efficiency nN 30 34 _ % (Voc = 26 Vde, Poy = 30 W (PEP), Icg = 125 mA, fy; = 1490 MHz, fo = 1490.1 MHz) Intermodulation Distortion IMD _ -34 30 dBc (Voc = 26 Vdc, Pou = 30 W (PEP), log = 125 mA, ty = 1490 MHz, fo = 1490.1 MHz) Input Retum Loss IRL 12 15 _ dB (Voc = 26 Vde, Poy = 30 W (PEP), Icq = 125 mA, fy = 1490 MHz, fo = 1490.1 MHz) Load Mismatch v (Voc = 28 Vdc, Pout = 30 W (PEP), Icq = 125 mA, f, = 1490 MHz, fo = 1490.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) No Degradation in Output Power TYPICAL CHARACTERISTICS 10.3 40 a 10.2 - 35 E 101 E99 = = oc 10.0 Ps 2 g 2 3 993 8 = 2c 20 5 98S 5 6 15 5 7 2 5 S o 8 Voc = 26 Vdc 3 Veg = 26 Vde = 10 cce & lous 125 mA es Ica = 125 mA f = 1490 MHz Tone 9.5 5 Single Tone 9.4 0 0 1 2 3 4 5 1400 1420 1440 1460 1480 1500 1620 1540 1560 1580 1600 Pin, INPUT POWER (WATTS) {, FREQUENCY (MHz) Figure 1. Output Power & Power Gain versus Input Power Figure 2. Output Power versus Frequency MOTOROLA WIRELESS SEMICONDUCTOR MRF15030 SOLUTIONS DEVICE DATA 4.2-679TYPICAL CHARACTERISTICS ) 1 8 3rd Order J ao So J > oa ath Voc = 26 Ig = 125 mA fy = 1490 MHz fp = 1490.1 MHz IMD, INTERMODULATION DISTORTION (dBc! J aon o 1 Dp oS oa a 10 15 2 25 30 Poy, OUTPUT POWER (WATTS) PEP 35 40 Figure 3. Intermodulation Distortion versus Output Power t ! ! S 8 8B IMD, INTERMODULATION DISTORTION (dBc) t & ~45 ~50 f, = 1490 MHz = 1490.1 MHz ~55 0.01 0.10 1.0 10 100 Poy;, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power Vog = 26 Ve Poy = 30 W (PEP) Ioq= 125 mA Gye. POWER GAIN (dB) 1450 1460 1470 1480 1490 1500 t, FREQUENCY (MHz) 1510 1520 1530 Figure 4. Performance in Broadband Circuit fy = 1490 MHz ip = 1490.1 MHz Gog, POWER GAIN (dB) 0.10 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 6. Power Gain versus Output Power 1, COLLECTOR EFFICIENCY (%)} 17 w g INPUT VSWR 1.28: = 2 So 1 ~ 60 a = 50 g 5 2 zZ 10 o & g 95 B 5 10 S SE 9 Veg = 24 Vide 2 9 IMD 83 4 Ip=25A oS Pot = 30 W (PEP) = f, = 1490 MHz as log = 125 mA E o_ 20 fp = 1490.1 MHz f, = 1490 MHz = 30 fo = 1490.1 MHz = 18 20 22 24 26 28 OG 15 82 2 3 3 40 45 50 Voge, COLLECTOR VOLTAGE (Vde) Pin, INPUT POWER (dBm) Figure 7. Power Gain and Intermodulation Figure 8. Class A Third Order Intercept Point Distortion versus Collector Voltage MRF15030 MOTOROLA WIRELESS SEMICONDUCTOR 42-680 SOLUTIONS DEVICE DATATYPICAL CHARACTERISTICS 3 I SS Eos MTBF Limited Trane 575C | of - f | | | | Ee IN = 2 = + + | t 2 Tignge = 100C eo FSS =F f s s 5 07 2 g | 310 oc = a So 15 Ej oO S$ oe 4 2 9 a 1 34 o g uu o Ty = 175C & a ~ 05 = | 0 I 0 4 8 12 16 20 24 28 100 120 140 160 180 200 220 240 = 260 Vee, COLLECTOR VOLTAGE (Vdc) Ty, JUNCTION TEMPERATURE (C) Figure 9. DC Safe Operating Area Figure 10. MTBF Factor versus Junction Temperature The above graph displays calculated MTBF in hours x ampere? emitter current. Life tests at elevated temperatures have correlated to better than +10% of the theoretical prediction for metal failure. Divide MTBF Factor by Ic? for MTBF in a particular application. f Zin Zor (GHz) (2) (Q) 1.40 1.15 + j4.25 1.87 + j0.78 1.45 1.15 + j4.55 1.67 +j0.78 1.50 1.20 + j4.80 1.47 +j0.78 1.55 1.45 + j5.15 1.27 +j0.78 1.60 1.89 + j5.25 1.00 + j0.78 Z*o. = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ P,,;, = 30 Watts (PEP), Voc = 26 Volts, Ieg = 125 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz MOTOROLA WIRELESS SEMICONDUCTOR MRF15030 SOLUTIONS DEVICE DATA 4.2-681Table 1. Small Signal S Parameters at Vor = 24 Vde, Ic = 2.5 Adc f Su Sa S12 S22 MHz Sq] Zo ISo4l Zo ISjal Zo ISool Lo 1000 0.983 173 0.366 49 0.006 36 0.890 178 1050 0.984 172 0.367 46 0.007 33 0.893 178 1100 0.978 172 0.367 43 0.007 33 0.888 178 4150 0.975 171 0.373 40 0.007 30 0.885 178 1200 0.975 171 0.382 36 0.008 31 0.886 177 1250 0.969 170 0.391 33 0.007 27 0.881 177 1300 0.963 169 0.408 29 0.008 21 0.879 177 1350 0.955 169 0.428 25 0.009 20 0.879 177 1400 0.945 168 0.452 20 0.008 7 0.873 177 1450 0.933 167 0.487 13 0.009 1 0.875 178 1500 0.915 166 0.525 6 0.009 -8 0.875 178 1550 0.889 166 0.572 -3 0.009 -18 0.877 178 1600 0.856 166 0.618 ~16 0.009 -35 0.887 178 1650 0.833 168 0.654 -30 0.010 54 0.901 178 1700 0.820 171 0.654 - 48 0.010 86 0:918 178 1750 0.839 174 0.600 66 0.010 -120 0.930 177 1800 0.872 175 0.517 -81 0.010 -152 0.932 176 1850 0.909 176 0.435 94 0.010 -176 0.925 174 1900 0.937 175 0.357 -104 0.011 159 0.924 173 1950 0.957 174 0.296 -112 0.012 148 0.917 173 2000 0.970 173 0.247 -119 0.012 136 0.915 173 Vbias R4 B1, B4 Long Bead, Fair Rite D1 Surface Mount Diode, Motorola B2, B3 Short Bead, Fair Rite D2 Light Emitting Diode, Industrial Devices C1 0.3 pF, B Case Chip Capacitor, ATC Li, L2 3 Turn, 20 AWG, 0.126 ID Choke c2 220 uF, Electrolytic Capacitor, Mallory N1, N2 Type N Flange Mount RF Connector, Omni Spectra C3,C14 0.1 pF, Chip Capacitor, Kemit Qi Transistor PNP Motorola (BD136) C4, C8 0.8 to 8 pF, Variable Capacitor, Johanson Q2,Q3 Surface Mount Transistor, NPN, Motorola (MJD47) C5, C11 1800 pF, Chip Capacitor, Kemit Ri 2 x 330 Q, 1/8 Watt Chip Resistors in Parallel, Rohm C6, C12 18 pF, B Case Chip Capacitor, ATC R2 100 Q, 1/8 Watt, Chip Resistor, Rohm C7,C10 51 pF, Chip Capacitor, Murata Erie R3, R6 4x 38 Q, 1/8 Watt, Chip Resistors in Parallel, Rohm cg 1.7 pF, B Case Chip Capacitor, ATC R4 39 Q, 1/8 Watt, Chip Resistor, Rohm C13 470 pF, Electrolytic Capacitor, Mallory R5 22 KQ, 1/8 Watt, Chip Resistor, Rohm Board Glass Teflon, Arion GX-0300-55~22, , = 2.55 Figure 12. Class AB Broadband Test Fixture Electrical Schematic MRF15030 MOTOROLA WIRELESS SEMICONDUCTOR 4.2-682 SOLUTIONS DEVICE DATABt, B4 Long Bead, Fair Rite B2, B3 Short Bead, Fair Rite C1, C2 100 pF, Electrolytic Capacitor, Mallory C3,C014 0.1 WF, Chip Capacitor, Kemit c4 1.3 pF, B Case Chip Capacitor, ATC C5,C12 = 18 pF, B Case Chip Capacitor, ATC C6, C11 1800 pF, Chip Capacitor, Kemit C7, C9 0.8 to 8 pF, Variable Capacitor, Johanson C8,C10 51 pF, Chip Capacitor, Murata Erie C13 470 uF, Electrolytic Capacitor, Mallory L1,L2 3 Tum, 20 AWG, 0.126 ID Choke N41, N2 Type N Flange Mount RF Connector, Omni Spectra DU oVcc 83 Ba +] Ci3Lc14 x OT pitts = 1 ay RF Output = Ne C12 < cg Transistor NPN Motorola (8D135) Transistor PNP Motorola (BD136) 250 Q, 1/8 Watt, Chip Resistor Rohm 500 Q, 1/4 Watt Potentiometer, State of the Art 4.7 KQ, 1/8 Watt, Chip Resistor, Rohm 2x 4,7 KQ, 1/8 Watt, Chip Resistors in Parailel, Rohm 1.0 2, 10 Watt, Resistor, Dale 38 , 1.0 Watt, Resistor 75 92, 1/8 Watt, Chip Resistor, Rohm 2x 109, 1/8 Watt, Chip Resistors in Parallel, Rohm 4x 38 Q, 1/8 Watt, Chip Resistors in Parallel, Rohm Glass Teflon, Arlon GX-0300-55-22, e, = 2.55 Figure 13. Class A Test Fixture Electrical Schematic MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA MRF 15030 4,2-683