ELM6472-4PS
C-Band Internally Matched FET
2/27/2009 1
FEATURES
High Output Power: P1dB=36.0dBm (Typ.)
High Gain: G1dB=11.0dB (Typ.)
High PAE: add=36% (Typ.)
Frequency Band: 6.4~7.2GHz
Internally matched
Plastic Package for SMT applications
DESCRIPTION
The ELM6472-4PS is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg-C)
Item Symbol
Rating Unit
Drain-Source Voltage VDS 15 V
Gate-Source Voltage VGS -5 V
Total Power Dissipation PT 27.3 W
Storage Temperature TSTG -40 to +125 deg-C
Channel Temperature TCH 175 deg-C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg-C)
Item Symbol
Condition Limit Unit
DC Input Voltage VDS <10 V
Forward Gate Current IGF RG=100 ohm <+16 mA
Reverse Gate Current IGR RG=100 ohm >-2.2 mA
Channel Temperature TCH 155 deg-C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg-C)
Item Symbol
Condition Limit Unit
Min.
Typ.
Max.
Drain Current IDSS VDS=5V, VGS=0V - 1700
2600
mA
Trans conductance gm VDS=5V, IDS=1100mA - 1700
- mS
Pinch-off Voltage VP VDS=5V, IDS=85mA -0.5 -1.5 -3.0 V
Gage
-
Source
Breakdown Voltage VGSO IGS=85uA -5.0 - - V
Output Power at 1dB G.C.P. P1dB
VDS=10V
Ids(DC)=0.65IDSS(typ.)
f=6.4~7.2 GHz
35.0
36.0
- dBm
Power Gain at 1dB G.C.P. G1dB 9.5 11.0
- dB
Drain Current Idsr - 1100
1300
mA
Power added Efficiency Nadd - 36 - %
Gain Flatness G - - 1.2 dB
3rd Order Inter modulation
Distortion IM3
f=
7.2
GHz
f=10MHz, 2-tone Test
Pout=25.5dBm (S.C.L) -40 -43 - dBc
Rth Rth Channel to Case - 4.5 5.5 Deg-C/W
Tch Tch 10V x Idsr x Rth - - 71.5
Deg-C
ELM6472-4PS
C-Band Internally Matched FET
2 2/27/2009
CASE STYLE: I2C
ESD Class 3 A 4000-8000V
MSL 2A 4 weeks after open the package
Ordering Information
Model Type MOQ MOU Packing Style
ELM6472-4PS 15pcs 15pcs 15pcs Tray
ELM6472-4PST 500pcs 500pcs 24mm width Tape (500pcs/Reel)
*MOQ stands for Minimum Order Quantity.
*MOU stands for Minimum Order Unit size.
Note
This device will not be delivered with test data but tested pass/fail 100% against DC and RF
specifications.
NO liquid cleaning process is suitable for this device. (including de-ionized water or solvent)
ELM6472-4PS
C-Band Internally Matched FET
2/27/2009 3
RF Characteristics
0
5
10
15
20
25
30
0 50 100 150 200
Total Power Dissipation (W)
Case Temperature (
o
C)
Power Derating Curve
Input Power vs. Output Power,
Power Added Efficiency
VDS=10V, IDS(DC)=1100mA
0
10
20
30
40
50
60
26
28
30
32
34
36
38
15 17 19 21 23 25 27 29
Power Added Efficiency [%]
Output Power [dBm]
Input Power [dBm]
6.4 GHz 6.8 GHz 7.2 GHz
Output Power vs. Frequency
VDS=10V, IDS(DC)=1100mA
26
28
30
32
34
36
38
6.2 6.4 6.6 6.8 7 7.2 7.4
Output Power [dBm]
Frequency [GHz]
17 dBm
19 dBm
21 dBm
23 dBm
25 dBm
27 dBm
P1dB
IMD vs. Output Power
VDS=10V, IDS(DC)=1100mA
-70
-65
-60
-55
-50
-45
-40
-35
-30
16 18 20 22 24 26 28 30
IMD [dBc]
Output Power [dBm] S.C.L.
6.4 GHz 6.8 GHz 7.2 GHz
IM3
IM5
ELM6472-4PS
C-Band Internally Matched FET
4 2/27/2009
Input Power vs. Output Power, Power Added
Efficiency by Drain Voltage
IDS(DC)=1100mA @6.4GHz
0
10
20
30
40
50
60
26
28
30
32
34
36
38
15 17 19 21 23 25 27 29
Power Added Efficiency [%]
Output Power [dBm]
Input Power [dBm]
8V 9V 10V
Input Power vs. Output Power, Power
Added Efficiency by Drain Voltage
IDS(DC)=1100mA @6.8GHz
0
10
20
30
40
50
60
26
28
30
32
34
36
38
15 17 19 21 23 25 27 29
Power Added Efficiency [%]
Output Power [dBm]
Input Power [dBm]
8V 9V 10V
Input Power vs. Output Power, Power Added
Efficiency by Drain Voltage
IDS(DC)=1100mA @7.2GHz
0
10
20
30
40
50
60
26
28
30
32
34
36
38
15 17 19 21 23 25 27 29
Ppwer Added Efficiency [%]
Output Power [dBm]
Input Power [dBm]
8V 9V 10V
ELM6472-4PS
C-Band Internally Matched FET
2/27/2009 5
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @6.4GHz
0
10
20
30
40
50
60
26
28
30
32
34
36
38
15 17 19 21 23 25 27 29
Power Added Efficiency [%]
Output Power [dBm]
Input Power [dBm]
700mA 900mA 1100mA
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @6.8GHz
0
10
20
30
40
50
60
26
28
30
32
34
36
38
15 17 19 21 23 25 27 29
Power Added Efficiency [%]
Output Power [dBm]
Input Power [dBm]
700mA 900mA 1100mA
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @7.2GHz
0
10
20
30
40
50
60
26
28
30
32
34
36
38
15 17 19 21 23 25 27 29
Power Added Efficiency [%]
Output Power [dBm]
Input Power [dBm]
700mA 900mA 1100mA
ELM6472-4PS
C-Band Internally Matched FET
6 2/27/2009
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V @6.4GHz
0
10
20
30
40
50
60
26
28
30
32
34
36
38
15 17 19 21 23 25 27 29
Power Added Efficiency [%]
Output Power [dBm]
Input Power [dBm]
Tc=-40deg-C Tc=20deg-C
Tc=80deg-C
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V @6.8GHz
0
10
20
30
40
50
60
26
28
30
32
34
36
38
15 17 19 21 23 25 27 29
Power Added Efficiency [%]
Output Power [dBm]
Input Power [dBm]
Tc=-40deg-C Tc=20deg-C
Tc=80deg-C
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V @7.2GHz
0
10
20
30
40
50
60
26
28
30
32
34
36
38
15 17 19 21 23 25 27 29
Power Added Efficiency [%]
Output Power [dBm]
Input Power [dBm]
Tc=-40deg-C Tc=20deg-C
Tc=80deg-C
ELM6472-4PS
C-Band Internally Matched FET
2/27/2009 7
IMD Performance vs. Output Power by Drain
Voltage
IDS(DC)=1100mA @6.4GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
16 18 20 22 24 26 28 30
IMD [dBc]
Output Power [dBm] S.C.L.
8V 9V 10V
IM3
IM5
IMD Performance vs. O
utput Power by Drain
Voltage
IDS(DC)=1100mA @6.8GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
16 18 20 22 24 26 28 30
IMD [dBc]
Output Power [dBm] S.C.L.
8V 9V 10V
IM3
IM5
IMD Performance vs. Output Power by Drain
Voltage
IDS(DC)=1100mA @7.2GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
16 18 20 22 24 26 28 30
IMD [dBc]
Output Power [dBm] S.C.L.
8V 9V 10V
IM3
IM5
ELM6472-4PS
C-Band Internally Matched FET
8 2/27/2009
IMD Performance vs. Output Power by
Quiescent Drain Current
VDS=10V @6.4GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
16 18 20 22 24 26 28 30
IMD [dBc]
Output Power [dBm] S.C.L.
700mA 900mA 1100mA
IM3
IM5
IMD Performance vs. Output Power by
Quiescent Drain Current
VDS=10V @6.8GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
16 18 20 22 24 26 28 30
IMD [dBc]
Output Power [dBm] S.C.L.
700mA 900mA 1100mA
IM3
IM5
IMD Performance vs. Output Power by
Quiescent Drain Current
VDS=10V @7.2GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
16 18 20 22 24 26 28 30
IMD [dBc]
Output Power [dBm] S.C.L.
700mA 900mA 1100mA
IM3
IM5
ELM6472-4PS
C-Band Internally Matched FET
2/27/2009 9
IMD Performance vs. Output Power by
Temperature
VDS=10V @6.4GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
16 18 20 22 24 26 28 30
IMD [dBc]
Output Power [dBm] S.C.L.
Tc=
-
40deg
-
C
Tc=20deg
-
C
Tc=80deg-C
IM3
IM5
IMD Performance vs. Output Power by
Temperature
VDS=10V @6.8GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
16 18 20 22 24 26 28 30
IMD [dBc]
Output Power [dBm] S.C.L.
Tc=
-
40deg
-
C
Tc=20deg
-
C
Tc=80deg-C
IM3
IM5
IMD P
erformance vs. Output Power by
Temperature
VDS=10V @7.2GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
16 18 20 22 24 26 28 30
IMD [dBc]
Output Power [dBm] S.C.L.
Tc=
-
40deg
-
C
Tc=20deg
-
C
Tc=80deg-C
IM3
IM5
ELM6472-4PS
C-Band Internally Matched FET
10 2/27/2009
S-Parameter
S11
S22
0∞
+10j
+25j
+50j
+100j
+250j
-10j
-25j
-50j -100j
-250j
10Ω
S21
S12
±180 0
-
+90
Scale for |S12
|
2
Scale for |S21|
Frequency
(MHz)
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
6200 0.696 -168.6 3.710 -14.2 0.054 79.8 0.553 -140.7
6300 0.683 175.8 3.777 -29.7 0.051 64.6 0.558 -157.2
6400 0.664 160.9 3.840 -44.6 0.047 49.5 0.562 -172.8
6500 0.644 146.2 3.877 -59.2 0.042 34.5 0.564 173.3
6600 0.620 131.4 3.924 -73.6 0.037 19.1 0.564 159.7
6700 0.587 116.5 3.981 -87.9 0.032 4.7 0.562 147.6
6800 0.554 101.4 4.083 -102.4 0.028 -12.7 0.556 136.5
6900 0.516 83.9 4.218 -117.2 0.024 -33.6 0.540 125.0
7000 0.468 63.1 4.412 -133.4 0.019 -59.3 0.513 113.6
7100 0.419 37.5 4.590 -151.0 0.015 -95.1 0.467 101.4
7200 0.381 4.8 4.735 -170.2 0.014 -140.1 0.399 88.4
7300 0.380 -33.9 4.727 168.6 0.015 173.6 0.303 74.4
7400 0.426 -71.1 4.535 146.8 0.019 133.6 0.183 60.9
S-Parameter
Reference Plane
Drain Gate
ELM6472-4PS
C-Band Internally Matched FET
2/27/2009 11
Package Outline
CoPlanarity
PinAssignments
1:NC
2:Gate
3:NC
4:NC
5:Drain
6:NC
7:Source
1
2
3
4
5
6
7
ELM6472-4PS
C-Band Internally Matched FET
12 2/27/2009
PCB Pads and Solder-Resist Pattern
ELM6472-4PS
C-Band Internally Matched FET
2/27/2009 13
Marking and Tape/Reel Configuration
ELM6472-4PS
C-Band Internally Matched FET
14 2/27/2009
Mounting Instructions for Package for Lead-free solder
Mounting Condition
For soldering, Lead-free solder (Sn-3.0Ag-0.5Cu)*1 or equivalent shall be used.
1. The example solder is a tin-rich alloy with 3.0% silver and 0.5% copper, often called Sn 96 for its
approximate Tin content.
2. A rosin type flux with chlorine content of 0.2% or less shall be used. The rosin flux with low halogen content
is recommended. When soldering, use the following time/ temperature profile with any of the methods listed
for acceptable solder joints.
3. Make sure the devices have been properly prepared with flux prior soldering.
*Reflow soldering method (Infrared reflow / Heat circulation reflow / Hot plate reflow);
Limit solder to 3 reflow cycles because resin is used in the modules manufacturing process.
Excessive reflow will effect the resin resulting in a potential failure or latent defect.
The recommended reflow temperature profile is shown below. The temperature of the reflow profile must be
measured at the device lead.
Reflow temperature profile and condition:
(1). Temperature rise: 3 deg-C/seconds.
(2). Preheating: 150 – 200 deg-C, 60 - 180seconds.
(3). Main heating: 220 deg-C, 60 seconds max.
(4). Main heating: 260 deg-C max., more than 250 deg-C, 20 - 40 seconds max.
* Measurement point: Device Heat-sink (Source Pin)
1. The above-recommended conditions were confirmed using the manufacturer’s equipment and materials.
However, when soldering these products, the soldering condition should be verified by customer using their
own particular equipment and materials.
Cleaning
Avoid washing of the device after soldering by reflow method due to the risk of liquid absorption by
the resin used in this part.
200
220
(4)
(1)
260
250
RT
(2
(3)
140
Time
Temperature (deg-C)
ELM6472-4PS
C-Band Internally Matched FET
2/27/2009 15
Humidity Lifetime for ELMxxxx-4PST
The following graph shows the effect of moisture on lifetime (moisture resistance) for the
ELMxxxx-4PST. Each graph indicates the MTTF and failure rate prediction (Confidential Level =
90 %) which calculated from the results of highly accelerated temperature and humidity stress
test (HAST).
Representative of device type: ELM7179-4PST
Subject of device type : ELMxxxx-4PST
Field environmental conditions for operation
If the ELMxxxx-4PST is installed in a non-hermetic environment, please refer to the following
recommendations and notes for design with, and assembly and use of our products.
Note 1. When drain current cuts off, it should be cut off by drain bias, and not cut off by gate
bias only. The humidity lifetime becomes shorter in case of the gate-only cut off
operation due to electric field strength interacting with humidity.
Note 2. ELMxxxx-4PST should be used under the environment conditions of no dew
condensation. These plots do not apply in the case of liquid absorbed into the resin,
whether applied to the part in assembly or as condensate in the application.
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
0 10 20 30 40 50 60 70 80 90 100
Typical Ambient Temperature (deg.C)
Time To Failure at Failure Rate of 0.1%(hours)
50%
60%
70%
80%
90%
Relative
Humidity
10 years
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
0 10 20 30 40 50 60 70 80 90 100
Typical Ambient Temperature (deg.C)
MTTF (hours)
50%
60%
70%
80%
90%
Relative
Humidity
ELM6472-4PS
C-Band Internally Matched FET
16 2/27/2009
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: +1 408 232-9500
FAX: +1 408 428-9111
Eudyna Devices Europe Ltd.
150 Edinburgh Avenue
Slough, Berkshire, SL1 4SS
United Kingdom
TEL: +44 (0) 1753 849950
FAX: +44 (0) 11753 577128
Eudyna Devices International Srl
Via Teglio 8/2 - 20158
Milano, Italy
TEL: +39-02-3705 2921
FAX: +39-02-3705 2920
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Suite 1906B, Tower 6, China Hong
Kong City
33 Canton Road, Tsim sha tsui,
Kowloon
Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and
the environment. For safety, observe the following
procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas,
powder, or liquid through burning, crushing, or
chemical processing as these by products are
dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations
when discarding this product. This product must be
discarded in accordance with methods specified by
applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and
Specifications without notice. The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2007 Eudyna Devices Inc.