ELM6472-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=11.0dB (Typ.) High PAE: add=36% (Typ.) Frequency Band: 6.4~7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-4PS is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg-C) Item Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V Total Power Dissipation PT 27.3 W Storage Temperature TSTG -40 to +125 deg-C Channel Temperature TCH 175 deg-C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg-C) Item Symbol Condition Limit Unit <10 V DC Input Voltage VDS Forward Gate Current IGF RG=100 ohm <+16 mA Reverse Gate Current IGR RG=100 ohm >-2.2 mA Channel Temperature TCH 155 deg-C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg-C) Item Symbol Condition Limit Min. Typ. Max. Unit Drain Current IDSS VDS=5V, VGS=0V - 1700 2600 mA Trans conductance gm VDS=5V, IDS=1100mA - 1700 - mS Pinch-off Voltage VP VDS=5V, IDS=85mA -0.5 -1.5 -3.0 V IGS=85uA -5.0 - - V 35.0 36.0 - dBm 9.5 11.0 - dB - 1100 1300 mA - 36 - % - - 1.2 dB -40 -43 - dBc Gage-Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Idsr Power added Efficiency Nadd Gain Flatness VDS=10V Ids(DC)=0.65IDSS(typ.) f=6.4~7.2 GHz G 3rd Order Inter modulation Distortion IM3 f=7.2GHz f=10MHz, 2-tone Test Pout=25.5dBm (S.C.L) Rth Rth Channel to Case - 4.5 5.5 Deg-C/W 10V x Idsr x Rth - - 71.5 Deg-C Tch 2/27/2009 Tch 1 ELM6472-4PS C-Band Internally Matched FET CASE STYLE: I2C ESD Class 3 A 4000-8000V MSL 2A 4 weeks after open the package Ordering Information Model Type MOQ MOU Packing Style ELM6472-4PS 15pcs 15pcs 15pcs Tray ELM6472-4PST 500pcs 500pcs 24mm width Tape (500pcs/Reel) *MOQ stands for Minimum Order Quantity. *MOU stands for Minimum Order Unit size. Note This device will not be delivered with test data but tested pass/fail 100% against DC and RF specifications. NO liquid cleaning process is suitable for this device. (including de-ionized water or solvent) 2 2/27/2009 ELM6472-4PS C-Band Internally Matched FET RF Characteristics 30 25 Output Power [dBm] Total Power Dissipation (W) Power Derating Curve 20 15 10 5 0 0 50 100 150 Case Temperature 200 38 60 36 50 34 40 32 30 30 20 28 10 26 0 15 17 (oC) 6.4 GHz Output Power vs. Frequency VDS=10V, IDS(DC)=1100mA 6.8 GHz 29 7.2 GHz IMD vs. Output Power VDS=10V, IDS(DC)=1100mA 38 -30 -35 36 -40 34 IM3 -45 IMD [dBc] Output Power [dBm] 19 21 23 25 27 Input Power [dBm] Power Added Efficiency [%] Input Power vs. Output Power, Power Added Efficiency VDS=10V, IDS(DC)=1100mA 32 -50 -55 30 -60 28 IM5 -65 26 6.2 6.4 6.6 6.8 7 7.2 7.4 Frequency [GHz] 17 dBm 19 dBm 21 dBm 25 dBm 27 dBm P1dB 2/27/2009 -70 16 18 20 22 24 26 28 30 Output Power [dBm] S.C.L. 23 dBm 6.4 GHz 3 6.8 GHz 7.2 GHz ELM6472-4PS C-Band Internally Matched FET 36 50 34 40 32 30 30 20 28 10 26 0 15 17 8V 19 21 23 25 27 Input Power [dBm] 9V 29 38 60 36 50 34 40 32 30 30 20 28 10 26 0 15 10V 17 8V 19 21 23 25 27 Input Power [dBm] 9V 29 10V 38 60 36 50 34 40 32 30 30 20 28 10 26 0 15 17 8V 19 21 23 25 27 Input Power [dBm] 9V Ppwer Added Efficiency [%] Output Power [dBm] Input Power vs. Output Power, Power Added Efficiency by Drain Voltage IDS(DC)=1100mA @7.2GHz 29 10V 4 2/27/2009 Power Added Efficiency [%] 60 Output Power [dBm] 38 Input Power vs. Output Power, Power Added Efficiency by Drain Voltage IDS(DC)=1100mA @6.8GHz Power Added Efficiency [%] Output Power [dBm] Input Power vs. Output Power, Power Added Efficiency by Drain Voltage IDS(DC)=1100mA @6.4GHz ELM6472-4PS C-Band Internally Matched FET 36 50 34 40 32 30 30 20 28 10 26 0 15 17 700mA 19 21 23 25 27 Input Power [dBm] 900mA 29 1100mA 60 36 50 34 40 32 30 30 20 28 10 26 0 700mA 2/27/2009 19 21 23 25 27 Input Power [dBm] 900mA 36 50 34 40 32 30 30 20 28 10 26 0 17 700mA Power Added Efficiency [%] Output Power [dBm] 38 17 60 15 Input Power vs. Output Power, Power Added Efficiency by Quiescent Drain Current VDS=10V @7.2GHz 15 38 29 1100mA 5 19 21 23 25 27 Input Power [dBm] 900mA 29 1100mA Power Added Efficiency [%] 60 Output Power [dBm] 38 Input Power vs. Output Power, Power Added Efficiency by Quiescent Drain Current VDS=10V @6.8GHz Power Added Efficiency [%] Output Power [dBm] Input Power vs. Output Power, Power Added Efficiency by Quiescent Drain Current VDS=10V @6.4GHz ELM6472-4PS C-Band Internally Matched FET 36 50 34 40 32 30 30 20 28 10 26 0 15 17 19 21 23 25 27 Input Power [dBm] Tc=-40deg-C Tc=80deg-C 29 38 60 36 50 34 40 32 30 30 20 28 10 26 0 15 Tc=20deg-C 17 19 21 23 25 27 Input Power [dBm] Tc=-40deg-C Tc=80deg-C 29 Tc=20deg-C 38 60 36 50 34 40 32 30 30 20 28 10 26 0 15 17 19 21 23 25 27 Input Power [dBm] Tc=-40deg-C Tc=80deg-C Power Added Efficiency [%] Output Power [dBm] Input Power vs. Output Power, Power Added Efficiency by Temperature VDS=10V @7.2GHz 29 Tc=20deg-C 6 2/27/2009 Power Added Efficiency [%] 60 Output Power [dBm] 38 Input Power vs. Output Power, Power Added Efficiency by Temperature VDS=10V @6.8GHz Power Added Efficiency [%] Output Power [dBm] Input Power vs. Output Power, Power Added Efficiency by Temperature VDS=10V @6.4GHz ELM6472-4PS C-Band Internally Matched FET IMD Performance vs. Output Power by Drain Voltage IDS(DC)=1100mA @6.4GHz IMD Performance vs. Output Power by Drain Voltage IDS(DC)=1100mA @6.8GHz -30 -30 -35 -35 -40 -40 IM3 IM3 IMD [dBc] -45 IMD [dBc] -45 -50 -50 -55 -55 IM5 -60 -65 -65 -70 -70 16 18 8V 20 22 24 26 28 30 Output Power [dBm] S.C.L. 9V 10V -30 -35 IM3 IMD [dBc] -45 -50 -55 IM5 -60 -65 -70 16 18 8V 2/27/2009 20 22 24 26 28 30 Output Power [dBm] S.C.L. 9V 16 18 8V IMD Performance vs. Output Power by Drain Voltage IDS(DC)=1100mA @7.2GHz -40 IM5 -60 10V 7 20 22 24 26 28 30 Output Power [dBm] S.C.L. 9V 10V ELM6472-4PS C-Band Internally Matched FET IMD Performance vs. Output Power by Quiescent Drain Current VDS=10V @6.4GHz IMD Performance vs. Output Power by Quiescent Drain Current VDS=10V @6.8GHz -30 -30 -35 -35 IM3 -40 IM3 -40 IMD [dBc] -45 IMD [dBc] -45 -50 -50 -55 -55 IM5 -60 -60 -65 -65 -70 -70 16 18 700mA 20 22 24 26 28 30 Output Power [dBm] S.C.L. 900mA IM5 16 1100mA 18 700mA 20 22 24 26 28 30 Output Power [dBm] S.C.L. 900mA 1100mA IMD Performance vs. Output Power by Quiescent Drain Current VDS=10V @7.2GHz -30 -35 IM3 -40 IMD [dBc] -45 -50 -55 IM5 -60 -65 -70 16 18 700mA 20 22 24 26 28 30 Output Power [dBm] S.C.L. 900mA 1100mA 8 2/27/2009 ELM6472-4PS C-Band Internally Matched FET IMD Performance vs. Output Power by Temperature VDS=10V @6.8GHz IMD Performance vs. Output Power by Temperature VDS=10V @6.4GHz -30 -30 -35 -35 -40 -40 IM3 IM3 -45 IMD [dBc] IMD [dBc] -45 -50 -50 -55 -55 IM5 -60 -65 -65 -70 -70 16 18 20 22 24 26 28 30 Output Power [dBm] S.C.L. Tc=-40deg-C Tc=80deg-C Tc=20deg-C -30 -35 -40 IM3 IMD [dBc] -50 -55 -60 IM5 -65 -70 16 18 20 22 24 26 28 30 Output Power [dBm] S.C.L. Tc=-40deg-C Tc=80deg-C 2/27/2009 16 18 20 22 24 26 28 30 Output Power [dBm] S.C.L. Tc=-40deg-C Tc=80deg-C IMD Performance vs. Output Power by Temperature VDS=10V @7.2GHz -45 IM5 -60 Tc=20deg-C 9 Tc=20deg-C ELM6472-4PS C-Band Internally Matched FET S-Parameter +90 +50j +100j +25j 10 +250j 0 Scale for |S21| 2 180 0 -250j -10j -25j -100j S11 -50j Frequency (MHz) 6200 6300 6400 6500 6600 6700 6800 6900 7000 7100 7200 7300 7400 - Scale for |S12| +10j S21 S12 S22 S11 S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG 0.696 0.683 0.664 0.644 0.620 0.587 0.554 0.516 0.468 0.419 0.381 0.380 0.426 -168.6 175.8 160.9 146.2 131.4 116.5 101.4 83.9 63.1 37.5 4.8 -33.9 -71.1 3.710 3.777 3.840 3.877 3.924 3.981 4.083 4.218 4.412 4.590 4.735 4.727 4.535 -14.2 -29.7 -44.6 -59.2 -73.6 -87.9 -102.4 -117.2 -133.4 -151.0 -170.2 168.6 146.8 0.054 0.051 0.047 0.042 0.037 0.032 0.028 0.024 0.019 0.015 0.014 0.015 0.019 79.8 64.6 49.5 34.5 19.1 4.7 -12.7 -33.6 -59.3 -95.1 -140.1 173.6 133.6 0.553 0.558 0.562 0.564 0.564 0.562 0.556 0.540 0.513 0.467 0.399 0.303 0.183 -140.7 -157.2 -172.8 173.3 159.7 147.6 136.5 125.0 113.6 101.4 88.4 74.4 60.9 Gate Drain S-Parameter Reference Plane 10 2/27/2009 ELM6472-4PS C-Band Internally Matched FET Package Outline 4 3 2 5 1 6 7 Co Planarity Pin 1 : 2 : 3 : 4 : 5 : 6 : 7 : 2/27/2009 11 Assignments NC Gate NC NC Drain NC Source ELM6472-4PS C-Band Internally Matched FET PCB Pads and Solder-Resist Pattern 12 2/27/2009 ELM6472-4PS C-Band Internally Matched FET Marking and Tape/Reel Configuration 2/27/2009 13 ELM6472-4PS C-Band Internally Matched FET Mounting Instructions for Package for Lead-free solder Mounting Condition 1. 2. 3. For soldering, Lead-free solder (Sn-3.0Ag-0.5Cu)*1 or equivalent shall be used. The example solder is a tin-rich alloy with 3.0% silver and 0.5% copper, often called Sn 96 for its approximate Tin content. A rosin type flux with chlorine content of 0.2% or less shall be used. The rosin flux with low halogen content is recommended. When soldering, use the following time/ temperature profile with any of the methods listed for acceptable solder joints. Make sure the devices have been properly prepared with flux prior soldering. *Reflow soldering method (Infrared reflow / Heat circulation reflow / Hot plate reflow); Limit solder to 3 reflow cycles because resin is used in the modules manufacturing process. Excessive reflow will effect the resin resulting in a potential failure or latent defect. The recommended reflow temperature profile is shown below. The temperature of the reflow profile must be measured at the device lead. Temperature (deg-C) Reflow temperature profile and condition: 260 250 220 200 140 (2 RT (4) (3) (1) Time (1). Temperature rise: 3 deg-C/seconds. (2). Preheating: 150 - 200 deg-C, 60 - 180seconds. (3). Main heating: 220 deg-C, 60 seconds max. (4). Main heating: 260 deg-C max., more than 250 deg-C, 20 - 40 seconds max. * Measurement point: Device Heat-sink (Source Pin) 1. The above-recommended conditions were confirmed using the manufacturer's equipment and materials. However, when soldering these products, the soldering condition should be verified by customer using their own particular equipment and materials. Cleaning Avoid washing of the device after soldering by reflow method due to the risk of liquid absorption by the resin used in this part. 14 2/27/2009 ELM6472-4PS C-Band Internally Matched FET Humidity Lifetime for ELMxxxx-4PST The following graph shows the effect of moisture on lifetime (moisture resistance) for the ELMxxxx-4PST. Each graph indicates the MTTF and failure rate prediction (Confidential Level = 90 %) which calculated from the results of highly accelerated temperature and humidity stress test (HAST). Representative of device type: ELM7179-4PST Subject of device type : ELMxxxx-4PST Field environmental conditions for operation If the ELMxxxx-4PST is installed in a non-hermetic environment, please refer to the following recommendations and notes for design with, and assembly and use of our products. Note 1. When drain current cuts off, it should be cut off by drain bias, and not cut off by gate bias only. The humidity lifetime becomes shorter in case of the gate-only cut off operation due to electric field strength interacting with humidity. Note 2. ELMxxxx-4PST should be used under the environment conditions of no dew condensation. These plots do not apply in the case of liquid absorbed into the resin, whether applied to the part in assembly or as condensate in the application. 1.E+10 1.E+09 1.E+09 Relative Humidity 1.E+08 60% 1.E+07 70% 80% 90% 1.E+06 Relative Humidity 1.E+08 50% MTTF (hours) Time To Failure at Failure Rate of 0.1%(hours) 1.E+10 10 years 50% 60% 70% 1.E+07 80% 90% 1.E+06 1.E+05 1.E+05 1.E+04 1.E+04 1.E+03 1.E+03 0 10 20 30 40 50 60 70 80 90 0 100 2/27/2009 10 20 30 40 50 60 70 80 Typical Ambient Temperature (deg.C) Typical Ambient Temperature (deg.C) 15 90 100 ELM6472-4PS C-Band Internally Matched FET For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: +1 408 232-9500 FAX: +1 408 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices Europe Ltd. 150 Edinburgh Avenue Slough, Berkshire, SL1 4SS United Kingdom TEL: +44 (0) 1753 849950 FAX: +44 (0) 11753 577128 Eudyna Devices International Srl Via Teglio 8/2 - 20158 Milano, Italy TEL: +39-02-3705 2921 FAX: +39-02-3705 2920 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 1906B, Tower 6, China Hong Kong City 33 Canton Road, Tsim sha tsui, Kowloon Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and Specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2007 Eudyna Devices Inc. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 16 2/27/2009