Micro International, Inc.
179-204 Belle Forrest Circle
Nashville, TN 37221
Tel: 615-662-1200 Fax 615-662-1226
Micro International, Inc
PRODUCT DATA
PART NUMBER
LDTBFR96 and LDTBFR96T
Micro-LID NPN Transistor
Micro-LID Transistors
LDTBFR96 and LDTBFR96T
Description:
The LDTBFR96 (untinned) and LDTBFR96T (tinned) are NPN silicon 5 GHz
wideband transistors in very small, rugged, surface mount, 4-post ceramic
packages (Micro International manufactured package p/n 4-075-1). The
LDTBFR96 and LDTBFR96T meet the general specifications of the BFR96
transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier
which can be provided with gold metallized or pre-tinned lands, and is approved
for military, medical implant, sensor, and high reliability applications. The
LDTBFR96 and LDTBFR96T can be provided with special feature options such
as additional temperature cycling, screening, and matching Hfe selection.
Maximum Ratings:
Parameter Symbol Rating
Collector-Base Voltage Vcbo 20 V
Collector-Emitter Voltage Vceo 15 V
Emitter-Base Voltage Vebo 3 V
Collector Current Ic 75 mA
Total Dissipation Pt 350 mW
Operating Junction Temperature Tj 150°C
Storage Temperature Tstg -65°C to 150°C
Operating Temperature Toper -55°C to 125°C
1/3 December 1997
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Micro-LID Transistors
LDTBFR96 and LDTBFR96T
______________________________________________________________________________________
Outline / Schematic:
Dimensions / Marking:
Length .075′′ + .003′′ Post 1 (Emitter) .015′′ x .010′′ typ
Width .040′′ + .003′′ Post 2 (Base) .015′′ x .010′′ typ
Height .035′′ + .003′′ Post 3,4 (Collector) .015′′ x .012′′ typ
Marking on back of package : Blue Diagonal Stripe over Emitter and Red Dot
(post down configuration) in Center
Standard In-Process Screening Requirements:
Ø Semiconductor die and Micro-LID package visual inspection
Ø Wire pull test
Ø 24 hour stabilization bake at 150°C
Ø 10 temperature cycles from –55°C to 125°C
Ø 100% electrical test of dc characteristics at 25°C
Ø Final visual inspection
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2/3 December 1997
.075
.040
4
3 2
1
.035
SUBSTRATE / CIRCUIT BOARD
1
2
3, 4
TOP VIEW
END VIEW
SIDE VIEW
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Micro-LID Transistors
LDTBFR96 and LDTBFR96T
Electrical Characteristics (25°C Ambient)
Parameter Symbol Min Typ Max Units
Collector-Base Breakdown BVcbo 20 -- -- V
Ic = 100 uA, Ie = 0
Collector-Emitter Breakdown* BVceo 15 -- -- V
Ib = 0, Ic = 10 mA
Emitter-Base Breakdown BVebo 3 -- -- V
Ic = 0, Ie = 100 uA
Collector-Base Cutoff Current Icbo -- -- 100 nA
Vcb = 10 V
DC Forward Current Gain* Hfe 25 -- --
Ic = 50 mA, Vce = 10 V
Collector Capacitance Cobo -- -- 1.3 pF
Vcb = 10 V, Ie = 0
f = 1 MHz
Gain Bandwidth Product fT -- 5 -- GHz
Ic = 50 mA, Vce = 10 V
f = 500 MHz
Noise Figure NF -- -- 3.3 dB
Ic = 50 mA, Vce = 10 V
f = 500 MHz
* Pulse test, pulse width < 300 usec, duty cycle < 2%
3/3 December 1997
www.microlid.com sales@microlid.com