BUZ 100 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * dv/dt rated * Ultra low on-resistance * 175C operating temperature * also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 100 50 V 60 A 0.018 TO-220 AB C67078-S1348-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 101 C Values Unit A 60 IDpuls Pulsed drain current TC = 25 C 240 EAS Avalanche energy, single pulse mJ ID = 60 A, VDD = 25 V, RGS = 25 L = 70 H, Tj = 25 C 250 Reverse diode dv/dt dv/dt kV/s IS = 60 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C 6 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 V W 250 Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC 0.6 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group C 55 / 175 / 56 1 07/96 BUZ 100 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = -40 C V 50 - - 2.1 3 4 VDS = 50 V, VGS = 0 V, Tj = 25 C - 0.1 1 A VDS = 50 V, VGS = 0 V, Tj = -40 C - 1 100 nA VDS = 50 V, VGS = 0 V, Tj = 150 C - 10 100 A Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 60 A Semiconductor Group nA - 2 0.013 0.018 07/96 BUZ 100 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 60 A Input capacitance 25 pF - 2400 3200 - 800 1200 - 300 450 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 39 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 40 60 - 100 150 - 250 335 - 140 190 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 100 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 240 V 1.4 1.8 trr ns - 70 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 60 - VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 120 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 0.16 - 07/96 BUZ 100 Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 260 65 W A 55 220 Ptot ID 200 50 180 45 160 40 140 35 120 30 100 25 80 20 60 15 40 10 20 5 0 0 0 20 40 60 80 100 120 140 C 0 180 20 40 60 80 100 120 140 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C C 180 TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 10 3 K/W A t = 30.0s p /ID ID = 10 2 V D ZthJC S 10 -1 100 s ) on S( D R 1 ms 10 -2 D = 0.50 0.20 10 ms 10 1 0.10 10 -3 0.05 single pulse 0.02 DC 0.01 10 0 0 10 10 1 V 10 10 -4 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 100 Typ. output characteristics ID = (VDS) Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS parameter: tp = 80 s 140 0.055 Ptot = 250W a l A k j i h 120 ID b c d e VGS [V] a 4.0 110 g 100 4.5 c 5.0 d 5.5 f e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 90 80 b 70 e 60 50 d 40 l 30 0.045 RDS (on) 0.040 0.035 0.030 0.025 f 0.020 g h 0.015 20.0 c 0.010 20 i j VGS [V] = 0.005 b 10 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.000 0 5.0 a 4.0 4.5 5.0 b 5.5 20 c 6.0 d 6.5 e f 7.0 7.5 40 60 g 8.0 h i j 9.0 10.0 20.0 80 VDS A 120 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max 60 40 A S 50 ID gfs 45 30 40 25 35 30 20 25 15 20 15 10 10 5 5 0 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 0 10 20 30 40 A 60 ID 6 07/96 BUZ 100 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 60 A, VGS = 10 V 0.050 4.6 V 98% 4.0 VGS(th) 0.040 RDS (on) 3.6 0.035 3.2 0.030 2.8 0.025 typ 2.4 98% 2% 2.0 0.020 typ 1.6 0.015 1.2 0.010 0.8 0.005 0.4 0.000 -60 0.0 -60 -20 20 60 100 C 180 -20 20 60 100 C Tj Typ. capacitances 180 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 3 A C IF pF Ciss 10 2 10 3 Coss 10 1 Tj = 25 C typ Tj = 175 C typ Crss Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 07/96 3.0 BUZ 100 Avalanche energy EAS = (Tj ) parameter: ID = 60 A, VDD = 25 V RGS = 25 , L = 70 H Typ. gate charge VGS = (QGate) parameter: ID puls = 90 A 260 16 mJ V 220 EAS VGS 200 12 180 10 160 0,2 VDS max 0,8 VDS max 140 8 120 100 6 80 4 60 40 2 20 0 20 0 40 60 80 100 120 140 C 180 Tj 0 10 20 30 40 50 60 70 80 nC 100 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 62 V 60 V(BR)DSS 59 58 57 56 55 54 53 52 51 50 49 48 47 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 07/96 BUZ 100 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96