Semiconductor Group 1 07/96
BUZ 100
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• d
v
/d
t
rated
• Ultra low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available Pin 1 Pin 2 Pin 3
G D S
Type
V
DS
I
D
R
DS(on)Package Ordering Code
BUZ 100 50 V 60 A 0.018 ΩTO-220 AB C67078-S1348-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
C = 101 °C
I
D 60 A
Pulsed drain current
T
C = 25 °C
I
Dpuls 240
Avalanche energy, single pulse
I
D = 60 A,
V
DD = 25 V,
R
GS = 25 Ω
L
= 70 µH,
T
j = 25 °C
E
AS
250
mJ
Reverse diode d
v
/d
t
I
S = 60 A,
V
DS = 40 V, d
i
F/d
t
= 200 A/µs
T
jmax = 175 °C
d
v
/d
t
6
kV/µs
Gate source voltage
V
GS ± 20 V
Power dissipation
T
C = 25 °C
P
tot 250 W
Operating temperature
T
j -55 ... + 175 °C
Storage temperature
T
stg -55 ... + 175
Thermal resistance, chip case
R
thJC ≤ 0.6 K/W
Thermal resistance, chip to ambient
R
thJA ≤ 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 175 / 56