DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1 tCK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
Automotive temperature (AT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Options1Marking
Configuration
256 Meg x 4 (32 Meg x 4 x 8 banks) 256M4
128 Meg x 8 (16 Meg x 8 x 8 banks) 128M8
64 Meg x 16 (8 Meg x 16 x 8 banks) 64M16
FBGA package (Pb-free) – x16
84-ball FBGA (8mm x 12.5mm)
Rev. G, H HR
FBGA package (Pb-free) – x4, x8
60-ball FBGA (8mm x 11.5mm)
Rev. G HQ
FBGA package (Pb-free) – x4, x8
60-ball FBGA (8mm x 10mm) Rev. H CF
FBGA package (lead solder) – x16
84-ball FBGA (8mm x 12.5mm)
Rev. G, H HW
FBGA package (lead solder) – x4, x8
60-ball FBGA (8mm x 11.5mm)
Rev. G HV
FBGA package (lead solder) – x4, x8
60-ball FBGA (8mm x 10mm) Rev. H JN
Timing – cycle time
1.875ns @ CL = 7 (DDR2-1066) -187E
2.5ns @ CL = 5 (DDR2-800) -25E
2.5ns @ CL = 6 (DDR2-800) -25
3.0ns @ CL = 4 (DDR2-667) -3E
3.0ns @ CL = 5 (DDR2-667) -3
3.75ns @ CL = 4 (DDR2-533) -37E
Self refresh
Standard None
Low-power L
Operating temperature
Commercial (0°C TC 85°C) None
Industrial (–40°C TC 95°C;
–40°C TA 85°C) IT
Automotive (–40°C TC , TA 105ºC) AT
Revision :G/:H
Note: 1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on www.micron.com for
product offerings and availability.
1Gb: x4, x8, x16 DDR2 SDRAM
Features
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN 1Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 1: Key Timing Parameters
Speed Grade Data Rate (MT/s) tRC (ns)CL = 3 CL = 4 CL = 5 CL = 6 CL = 7
-187E 400 533 667 800 1066 54
-25E 400 533 800 800 n/a 55
-25 400 533 667 800 n/a 55
-3E 400 667 667 n/a n/a 54
-3 400 533 667 n/a n/a 55
-37E 400 533 n/a n/a n/a 55
Table 2: Addressing
Parameter 256 Meg x 4 128 Meg x 8 64 Meg x 16
Configuration 32 Meg x 4 x 8 banks 16 Meg x 8 x 8 banks 8 Meg x 16 x 8 banks
Refresh count 8K 8K 8K
Row address A[13:0] (16K) A[13:0] (16K) A[12:0] (8K)
Bank address BA[2:0] (8) BA[2:0] (8) BA[2:0] (8)
Column address A[11, 9:0] (2K) A[9:0] (1K) A[9:0] (1K)
Figure 1: 1Gb DDR2 Part Numbers
Package
Pb-free
84-ball 8mm x 12.5mm FBGA
60-ball 8mm x 11.5mm FBGA
60-ball 8mm x 10.0mm FBGA
Lead solder
84-ball 8mm x 12.5mm FBGA
60-ball 8mm x 10mm FBGA
60-ball 8mm x 11.5mm FBGA
HR
HQ
CF
HW
JN
HV
Example Part Number: MT47H128M8CF-25
Configuration
256 Meg x 4
128 Meg x 8
64 Meg x 16
256M4
128M8
64M16
Speed Grade
tCK = 1.875ns, CL = 7
tCK = 2.5ns, CL = 5
tCK = 2.5ns, CL = 6
tCK = 3ns, CL = 4
tCK = 3ns, CL = 5
tCK = 3.75ns, CL = 4
-187E
-25E
-25
-3E
-3
-37E
-
Configuration
MT47H Package Speed
Revision
Revision
:G/:H
:
Low power
Industrial temperature
Automotive temperature
L
IT
AT
{
Note: 1. Not all speeds and configurations are available in all packages.
1Gb: x4, x8, x16 DDR2 SDRAM
Features
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN 2Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
FBGA Part Number System
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.
1Gb: x4, x8, x16 DDR2 SDRAM
Features
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN 3Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.