2N6052 MECHANICAL DATA PNP DARLINGTON SILICON POWER TRANSISTOR Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 VCEO = 100V IC = 12A PD = 150W 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO-3 (TO-204AA) Pin 1 - Base Pin 2 - Emitter Case - Collector DESCRIPTION A hermetic TO3 packaged silicon power Darlington transistor designed for general purpose amplifier and low frequency switching applications. Hi-Reliability screening options available. ABSOLUTE MAXIMUM RATINGS TCASE = 25C unless otherwise stated VCBO VCEO VEBO IC IB Ptot Tj, Tstg Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Base Current Total Power Dissipation at Tcase = 25C De-rate Linearly Tcase > 25C Operating and Storage Temperature Range -100V -100V -5.0V -12.0A -0.2A 150W 0.855W/C -65 to +200C THERMAL CHARACTERISTICS RJC Thermal Resistance Junction - Case Max 1.17 C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 8026, ISSUE 1 2N6052 ELECTRICAL CHARACTERISTICS (Tcase=25C unless otherwise stated) Symbol Parameter ICEO Collector-Emitter Breakdown Voltage Collector-Emitter Cut-Off Current ICEX Collector-Emitter Cut-Off Current IEBO Emitter-Base Cut-Off Current V(BR)CEO* hFE* Test Conditions Min. Typ. Max. IB = 0 IC = -10mA -100 - - IB = 0 VCE = -50V - - -1.0 VBE = 1.5V VCE = -100V - - -0.5 TC = 150C - - -5.0 IC = 0 VEB = -5.0V - - -2.0 IC = -6A VCE = -3.0V 750 - 12000 TC = -55C 300 - - IC = -12A VCE = -3.0V 100 - - DC Current Gain Unit V mA VCE(sat)* Collector-Emitter Saturation Voltage IC = -12A IB = -120mA - - -3.0 IC = -6A IB = -24mA - - -2.0 VBE(sat)* Base-Emitter Saturation Voltage IC = -12.0A IB = -120mA - - -4.0 VBE(on)* Base-Emitter On Voltage IC = -6A VCE = -3.0V - - -2.8 4.0 - - MHz - - 300 pF 1000 - - V DYNAMIC CHARACTERISTICS (Tcase=25C unless otherwise stated) fT COBO hfe Transition Frequency IC = -5A VCE = -3.0V f = 1.0MHz Output Capacitance Small Signal Current Gain IE = 0 VCB = -10V f = 1.0MHz IC = -0.8A VCE = -3.0V f = 1.0KHz * Pulse test tp = 380s, < 2% Parameter verified by design only Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 8026, ISSUE 1