CMLT2207G
SURFACE MOUNT SILICON
DUAL, COMPLEMENTARY
TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2207G
consists of one isolated 2N2222A NPN transistor and
one complementary isolated 2N2907A PNP transistor,
manufactured by the epitaxial planar process and
epoxy molded in an SOT-563 surface mount package.
This device has been designed for small signal general
purpose amplifier and switching applications.
MAXIMUM RATINGS: (TA=25°C) SYMBOL NPN (Q1) PNP (Q2) UNITS
Collector-Base Voltage VCBO 75 60 V
Collector-Emitter Voltage VCEO 40 60 V
Emitter-Base Voltage VEBO 6.0 5.0 V
Continuous Collector Current IC 600 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN (Q1) PNP (Q2)
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=60V - 10 - - nA
ICBO V
CB=50V - - - 10 nA
ICBO V
CB=60V, TA=125°C - 10 - - nA
ICBO V
CB=50V, TA=125°C - - - 10 nA
ICEV V
CE=60V, VEB(OFF)=3.0V - 10 - - nA
ICEV V
CE=30V, VEB(OFF)=500mV - - - 50 nA
IEBO V
EB=3.0V - 10 - - nA
BVCBO I
C=10µA 75 - 60 - V
BVCEO I
C=10mA 40 - 60 - V
BVEBO I
E=10µA 6.0 - 5.0 - V
VCE(SAT) I
C=150mA, IB=15mA - 0.3 - 0.4 V
VCE(SAT) I
C=500mA, IB=50mA - 1.0 - 1.6 V
VBE(SAT) I
C=150mA, IB=15mA 0.6 1.2 - 1.3 V
VBE(SAT) I
C=500mA, IB=50mA - 2.0 - 2.6 V
hFE V
CE=10V, IC=0.1mA 35 - 75 -
hFE V
CE=10V, IC=1.0mA 50 - 100 -
hFE V
CE=10V, IC=10mA 75 - 100 -
hFE V
CE=10V, IC=150mA 100 300 100 300
hFE V
CE=1.0V, IC=150mA 50 - - -
hFE V
CE=10V, IC=500mA 40 - 50 -
MARKING CODE: L7G
• Device is Halogen Free by design
SOT-563 CASE
R5 (29-June 2015)
www.centralsemi.com
CMLT2207G
SURFACE MOUNT SILICON
DUAL, COMPLEMENTARY
TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: NPN (Q1) PNP (Q2)
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
fT V
CE=20V, IC=20mA, f=100MHz 300 - - - MHz
fT V
CE=20V, IC=50mA, f=100MHz - - 200 - MHz
Cob V
CB=10V, IE=0, f=1.0MHz - 8.0 - 8.0 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz - 25 - - pF
Cib V
EB=2.0V, IC=0, f=1.0MHz - - - 30 pF
hie V
CE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 - - k
hie V
CE=10V, IC=10mA, f=1.0kHz 0.25 1.25 - - k
hre V
CE=10V, IC=1.0mA, f=1.0kHz - 8.0 - - x10-4
hre V
CE=10V, IC=10mA, f=1.0kHz - 4.0 - - x10-4
hfe V
CE=10V, IC=1.0mA, f=1.0kHz 50 300 - -
hfe V
CE=10V, IC=10mA, f=1.0kHz 75 375 - -
hoe V
CE=10V, IC=1.0mA, f=1.0kHz 5.0 35 - - µS
hoe V
CE=10V, IC=10mA, f=1.0kHz 25 200 - - µS
rb’Cc V
CB=10V, IE=20mA, f=31.8MHz - 150 - - ps
NF VCE=10V, IC=100µA, RS=1.0kΩ, f=1.0kHz - 4.0 - - dB
ton V
CC=30V, VBE=0.5V, IC=150mA, IB1=15mA - - - 45 ns
td V
CC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 10 - 10 ns
tr V
CC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 25 - 40 ns
toff V
CC=6.0V, IC=150mA, IB1=IB2=15mA - - - 100 ns
ts V
CC=30V, IC=150mA, IB1=IB2=15mA - 225 - - ns
ts V
CC=6.0V, IC=150mA, IB1=IB2=15mA - - - 80 ns
tf V
CC=30V, IC=150mA, IB1=IB2=15mA - 60 - - ns
tf V
CC=6.0V, IC=150mA, IB1=IB2=15mA - - - 30 ns
MARKING CODE: L7GLEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
SOT-563 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R5 (29-June 2015)
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(001)
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