CS30-12io1 Thyristor VRRM = 1200 V I TAV = 30 A VT = 1.3 V Single Thyristor Part number CS30-12io1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130306a CS30-12io1 Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1300 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 V I R/D reverse current, drain current VR/D = 1200 V TVJ = 25C 50 A VR/D = 1200 V TVJ = 125C 2 mA VT IT = forward voltage drop IT = 60 A IT = 30 A IT = 60 A average forward current TC = 120C I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current TVJ = 125 C for power loss calculation only value for fusing CJ junction capacitance PGM max. gate power dissipation typ. TVJ = 25C 30 A I TAV It min. average gate power dissipation (di/dt) cr critical rate of rise of current V V 1.30 V 1.71 V T VJ = 150 C 30 A 49 A TVJ = 150 C 0.87 V 14.2 m 0.5 K/W K/W 0.25 TC = 25C 250 W t = 10 ms; (50 Hz), sine TVJ = 45C 400 A t = 8,3 ms; (60 Hz), sine VR = 0 V 430 A t = 10 ms; (50 Hz), sine TVJ = 150 C 340 A t = 8,3 ms; (60 Hz), sine VR = 0 V 365 A t = 10 ms; (50 Hz), sine TVJ = 45C 800 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 770 As TVJ = 150 C 580 As 555 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C t P = 30 s T C = 150 C 16 t P = 300 s PGAV 1.30 1.63 TVJ = 125C; f = 50 Hz repetitive, IT = 90 A non-repet., I T = 30 A pF 10 W 5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.3 A/s; IG = 0.3 A; VD = VDRM 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 125C VGT gate trigger voltage VD = 6 V TVJ = 25 C 1 TVJ = -40 C 1.2 V I GT gate trigger current VD = 6 V TVJ = 25 C 55 mA TVJ = -40 C 80 mA TVJ = 125 C 0.2 V 5 mA TVJ = 25 C 150 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s IG = 0.3 A; di G /dt = V 0.3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 100 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time VR = 100 V; I T = 30 A; VD = VDRM TVJ = 150 C IG = 0.3 A; di G /dt = 0.3 A/s di/dt = 15 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 150 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20130306a CS30-12io1 Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 C -40 150 C Weight 6 MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking Logo Part Number DateCode Assembly Code abcdef YYWWZ 000000 Assembly Line Ordering Standard Part Number CS30-12io1 Similar Part CS30-14io1 CS30-16io1 CLA30E1200HB Equivalent Circuits for Simulation I V0 R0 Marking on Product CS30-12io1 Package TO-247AD (3) TO-247AD (3) TO-247AD (3) * on die level Delivery Mode Tube Code No. 466565 Voltage class 1400 1600 1200 T VJ = 150C Thyristor V 0 max threshold voltage 0.87 V R 0 max slope resistance * 11.7 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20130306a CS30-12io1 Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130306a CS30-12io1 Thyristor 80 400 1000 50 Hz, 80% VRRM VR = 0 V 350 60 300 TVJ = 45C ITSM IT 40 2 It 250 TVJ = 45C [A] [A] 200 20 125C 150C TVJ = 125C 150 TVJ = 25C 0 0.5 1.0 100 1.5 100 2.0 0.01 0.1 1 1 2 3 t [s] VT [V] t [ms] Fig. 3 I t versus time (1-10 ms) 1000 1: IGD, TVJ = 150C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 4 5 6 7 8 910 2 Fig. 2 Surge overload current Fig. 1 Forward characteristics 10 TVJ = 125C 2 [A s] 80 dc = 1 0.5 0.4 0.33 0.17 0.08 60 6 100 VG 1 [V] typ. tgd 23 IT(AV)M Limit 40 1 4 [s] 5 [A] 10 TVJ = 125C 20 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 0.1 1 10 100 1000 1 10 10000 0 100 1000 0 25 IG [mA] IG [mA] 60 P(AV) 100 125 150 Fig. 6 Max. forward current at case temperature 0.6 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 dc = 1 50 0.5 0.4 0.33 40 0.17 0.08 75 TC [C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 50 0.4 ZthJC 30 [K/W] [W] 20 Rthi [K/W] 0.2 10 0 0 10 20 30 40 IF(AV) [A] 0 50 100 150 Tamb [C] (c) 2013 IXYS all rights reserved 101 102 0.01 0.0001 0.2 0.05 0.11 0.02 0.2 0.11 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0.0 100 ti [s] 0.08 0.06 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20130306a