QS6K1
Transistors
Rev.B 1/3
2.5V Drive
Nch+Nch
MOS FET
QS6K1
zStructure
Silicon N-channel
MOS FET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT6).
zApplicat ion
Power sw itching, DC / DC converter .
zExternal dimensions (Unit : mm)
Each lead has same dimensions
TSMT6
0.4
(1)
(5)
(3)
(6)
(2)
(4)
1pin mark
2.8
1.6
1.9
2.9
0.950.95
0
~
0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6
Abbreviated symbol : K01
zPackaging specifications
Package
Code Taping
Basic ordering unit (pieces)
QS6K1
TR
3000
Type
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the T r1 and T r2>
∗1
∗1
∗2
Parameter VV
DSS
Symbol 30 VV
GSS
12 AI
D
AI
DP
AI
S
AI
SP
W / TOTAL
P
D
°CTch 150
°CTstg −55 to +150
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation (T
C
=25°C)
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode) Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
±1.0
±4.0
0.8
4.0
1.25
W / ELEMENT
0.9
zEquivalent circuit
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1)
∗1
∗2∗2
∗1
(6) (4)(5)
(1) (3)(2)
(2) (3)
(6) (5) (4)
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance
°C / W / TOTAL
Rth (ch-a) 100
Parameter Symbol Limits Unit
Channel to ambient
°C / W / ELEMENT
139
∗
∗ Mounted on a ceramic board
QS6K1
Transistors
Rev.B 2/3
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the T r1 and T r2>
Parameter Symbol
IGSS
Yfs
Min.
−
Typ. Max. Unit Conditions
Gate-source leakage V(BR) DSS 30
Drain-source breakdown voltage
IDSS −
Zero gate voltage drain current
VGS (th) 0.5Gate threshold voltage
−
Static drain-source on-state
resistance RDS (on) −
Forward transfer admittance −
Input capacitance 1.0
Output capacitance
C
iss −
Reverse transfer capacitance Coss −
Turn-on delay time Crss −
Rise time td (on) −
Turn-off delay time tr−
Fall time td (off) −
Total gate charge tf−
Gate-source charge Qg−
Gate-drain charge Qgs −
Qgd −
∗Pulsed
∗
∗
∗
∗
∗
∗
∗
∗
∗
−10 µAV
GS=12V, VDS=0V
VDD 15V
−−VI
D=1mA, VGS=0V
−1µAV
DS=30V, VGS=0V
−1.5 V VDS=10V, ID=1mA
170 238 ID=1.0A, VGS=4.5V
180 252 mΩID=1.0A, VGS=4.0V
260 364 ID=1.0A, VGS=2.5V
−−SI
D=1.0A, VDS=10V
77 −pF VDS=10V
25
15 −pF VGS=0V
7−pF f=1MHz
VGS=4.5V
RL=30.0Ω
RG=10Ω
7−ns
15 −ns
6−ns
1.7 −ns
0.4 2.4 nC
0.4 −nC VGS=4.5V
−nC ID=1.0A
ID=500mA, VDD 15V
zBody diode characteristics (Source-Drain) (Ta=25°C)
<It is the same characteristics for the T r1 and T r2>
Forward voltage V
SD
−−1.2 V I
S
=3.2A, V
GS
=0V
Parameter Symbol Min. Typ. Max. Unit Conditions
∗Pulsed
∗
QS6K1
Transistors
Rev.B 3/3
zElectrical characteristic curves
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
1
CAPACITANCE : C (pF)
100
1000
10
Ta=25°C
f=1MHz
V
GS
=0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Ciss
Coss
Crss
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
100
SWITCHING TIME : t (ns)
1000
Fig.2 Switching Characteristics
Ta=25°C
VDD=15V
VGS=4.5V
RG=10Ω
Pulsed
t
r
t
f
t
d (off)
t
d (on)
012
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : V
GS
(V)
3
Ta=25°C
VDD=15V
ID=1A
RG=10Ω
Pulsed
Fig.3
Dynamic Input Characteristics
0.0 0.5 1.0 1.5 2.0
GATE-SOURCE VOLTAGE : V
GS
(V)
10
0.001
0.01
0.1
1
DRAIN CURRENT : I
D
(A)
Fig.4
Typical Transfer Characteristics
V
DS
=10V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
024681012141
GATE-SOURCE VOLTAGE : VGS (V)
0
100
200
300
400
500
600
700
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
6
ID=1A
ID=0.5A
Ta=25°C
Pulsed
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
SOURCE CURRENT : I
s
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=0V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
100
1000
10000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=4.5V
Pulsed
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
0.01 0.1 1 10
100
1000
10000
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=4V
Pulsed
DRAIN CURRENT : ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
0.01 0.1 1 10
100
1000
10000
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=2.5V
Pulsed
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
