G
C
E
TO-247
GCE
052-6252 Rev A
APT20GF120BRD
1200V 32A
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT™ combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• Low Tail Current • Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT & FRED
PRELIMINARY
MIN TYP MAX
1200
4.5 5.5 6.5
2.7 3.2
3.3 3.9
1.0
6.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA)
Gate Threshold Voltage (VCE = VGE, IC = 350µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM1
ICM2
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KΩ)
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1 @ TC = 25°C
Pulsed Collector Current 1 @ T C = 90°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT20GF120BRD
1200
1200
±20
32
20
64
40
200
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 5792 1515 FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
PRELIMINARY
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS (IGBT) APT20GF120BRD
UNIT
°C/W
oz
gm
lb•in
N•m
MIN TYP MAX
0.63
0.90
40
0.22
6.1
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
RΘJC
RΘJA
WT
Torque
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.8VCES
IC = IC2
RG = 10Ω
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +25°C
VCE = 20V, IC = 15A
MIN TYP MAX
1100 1500
165 250
70 100
95 150
13 20
55 85
17
75
99
170
20 30
35 70
190 275
90 135
1.2
1.8
3.0
20
35
160
90
2.7
12
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
052-6252 Rev A
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 2
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 3
Turn-off Switching Energy
Total Switching Losses 3
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses 3
Forward Transconductance
1Repetitive Rating: Pulse width limited by maximum junction temperature.
2See MIL-STD-750 Method 3471
3Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
PRELIMINARY
052-6252 Rev A
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
APT20GF120BRD
PRELIMINARY
Power dissipation
P
tot
= ƒ(
T
C
)
parameter:
T
j
≤ 150 °C
020 40 60 80 100 120 °C 160
T
C
0
20
40
60
80
100
120
140
160
180
W
220
P
tot
Collector current
I
C
= ƒ(
T
C
)
parameter:
V
GE
≥ 15 V ,
T
j
≤ 150 °C
020 40 60 80 100 120 °C 160
T
C
0
4
8
12
16
20
24
A
32
I
C
Safe operating area
I
C
= ƒ(
V
CE
)
parameter:
D
= 0
, T
C
= 25°C ,
T
j
≤ 150 °C
-1
10
0
10
1
10
2
10
A
I
C
10
0
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 µs
10 µs
t
p = 9.0µs
Transient thermal impedance IGBT
Z
th JC
= ƒ(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
PRELIMINARY
052-6252 Rev A
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
APT20GF120BRD
PRELIMINARY
Typ. gate charge
V
GE
= ƒ(
Q
Gate
)
parameter:
I
C puls
= 15 A
010 20 30 40 50 60 70 80 100
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
800 V600 V
Typ. capacitances
C
=
f
(
V
CE
)
parameter:
V
GE
= 0 V, f = 1 MHz
0 5 10 15 20 25 30 V 40
V
CE
-2
10
-1
10
0
10
1
10
nF
C
Ciss
Coss
Crss
Short circuit safe operating area
I
Csc
=
f
(
V
CE
) ,
T
j
= 150°C
parameter:
V
GE
= ± 15 V,
t
sc
≤ 10 µs, L < 25 nH
0200 400 600 800 1000 1200 V 1600
V
CE
0
2
4
6
10
I
Csc
/
I
C(90°C)
Reverse biased safe operating area
I
Cpuls
=
f
(V
CE
) ,
T
j
= 150°C
parameter:
V
GE
= 15 V
0200 400 600 800 1000 1200 V 1600
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls
/
I
C
16A
Cies
Coes
Cres
ICpulse/IC1
ICsc /IC2
Typ. output characteristics
I
C
=
f
(
V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 25 °C
0 1 2 3 V 5
V
CE
0
2
4
6
8
10
12
14
16
18
20
22
24
A
30
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
=
f
(
V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 125 °C
0 1 2 3 V 5
V
CE
0
2
4
6
8
10
12
14
16
18
20
22
24
A
30
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
=
f
(
V
GE
)
parameter:
t
p
= 80 µs,
V
CE
= 20 V
0 2 4 6 8 10 V 14
V
GE
0
2
4
6
8
10
12
14
16
18
20
22
24
A
30
I
C
PRELIMINARY
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Symbol
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
Symbol
VF
IRM
LS
Characteristic / Test Conditions
IF = 30A
Maximum Forward Voltage IF = 60A
IF = 30A, TJ = 150°C
Maximum Reverse Leakage Current VR = VR Rated
VR = VR Rated, TJ = 125°C
Series Inductance (Lead to Lead 5mm from Base)
STATIC ELECTRICAL CHARACTERISTICS (FRED)
UNIT
Volts
Amps
UNIT
Volts
µA
nH
MIN TYP MAX
2.5
2.0
2.0
250
500
10
APT20GF120BRD
1200
30
70
210
MAXIMUM RATINGS (FRED) All Ratings: TC = 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
052-6252 Rev A
Maximum Reverse Leakage Current
MIN TYP MAX
70 85
70
160
255
255
712
12 20
660
1640
15
20
245
160
UNIT
ns
Amps
nC
Volts
A/µs
Characteristic
Reverse Recovery Time, IF = 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C
Reverse Recovery Time TJ = 25°C
IF = 30A, diF/dt = -240A/µs, VR = 650V TJ = 100°C
Forward Recovery Time TJ = 25°C
IF = 30A, diF/dt = 240A/µs, VR = 650V TJ = 100°C
Reverse Recovery Current TJ = 25°C
IF = 30A, diF/dt = -240A/µs, VR = 650V TJ = 100°C
Recovery Charge TJ = 25°C
IF = 30A, diF/dt = -240A/µs, VR = 650V TJ = 100°C
Forward Recovery Voltage TJ = 25°C
IF = 30A, diF/dt = 240A/µs, VR = 650V TJ = 100°C
Rate of Fall of Recovery Current TJ = 25°C
IF = 30A, diF/dt = -240A/µs, VR = 650V (See Figure 10) TJ = 100°C
DYNAMIC CHARACTERISTICS (FRED)
Symbol
trr1
trr2
trr3
tfr1
tfr2
IRRM1
IRRM2
Qrr1
Qrr2
Vfr1
Vfr2
diM/dt
APT20GF120BRD
PRELIMINARY
ZΘJC, THERMAL IMPEDANCE trr, REVERSE RECOVERY TIME IRRM, REVERSE RECOVERY CURRENT IF, FORWARD CURRENT
(°C/W) (nano-SECONDS) (AMPERES) (AMPERES)
tfr, FORWARD RECOVERY TIME Kf, DYNAMIC PARAMETERS Qrr, REVERSE RECOVERY CHARGE
(nano-SECONDS) (NORMALIZED) (nano-COULOMBS)
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 1, Forward Voltage Drop vs Forward Current Figure 2, Reverse Recovery Charge vs Current Slew Rate
diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)
Figure 3, Reverse Recovery Current vs Current Slew Rate Figure 4, Dynamic Parameters vs Junction Temperature
diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
VR, REVERSE VOLTAGE (VOLTS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT20GF120BRD
052-6252 Rev A
D=0.5
0.2
0.1
0.05
0.02
0.01 SINGLE PULSE
NOTE:
DM JC CJ=+
DUTY FACTOR D =t12
/
PEAK T P x Z T
PDM
t
2
t
t1
0 1 2 3 4 10 50 100 500 1000
0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150
0 200 400 600 800 1000 0 200 400 600 800 1000
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
100
80
60
40
20
0
50
40
30
20
10
0
250
200
150
100
50
0
1.0
0.5
0.1
0.05
0.01
0.005
0.001
TJ=100°C
VR=650V
2400
2000
1600
1200
800
400
0
2.0
1.6
1.2
0.8
0.4
0.0
2000
1600
1200
800
400
0
100
80
60
40
20
0
TJ=100°C
VR=650V
TJ=100°C
VR=650V
TJ=100°C
VR=650V
IF=30A
trr
IRRM
Qrr
TJ = -55°C
TJ = 100°C
TJ = 150°C
15A
30A
60A
15A
30A
60A
60A
30A
15A
Vfr
tfr
TJ = 25°C
trr
Qrr
PRELIMINARY
APT20GF120BRD
052-6252 Rev A
PRELIMINARY
PEARSON 411
CURRENT
TRANSFORMER
0.5 IRRM
di
F
/dt Adjust
30µH
D.U.T.
+15v
-15v
0v
Vr
Dimensions in Millimeters and (Inches)
4
3
1
2
5
5
0.75 IRRM
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F
/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of I
F
Qrr - Area Under the Curve Defined by I
RRM
and trr.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Current Falling Through Zero to a Tangent Line
{
diM/dt
}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM
.
6
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
Figure 8, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2
(
trr . I
RRM
)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
TO-247 Package Outline
