SEMICONDUCTOR BAV23S TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES E B L L *Low Leakage Current. *Low Capacitance : CT2pF. D *Repetitive Peak Reverse Voltage : VRRM250V. 3 H G A 2 1 Q SYMBOL RATING VRM 250 V Reverse Voltage VR 200 V Maximum (Peak) Forward Current IFM 625 mA Maximum (Peak) Reverse Voltage J UNIT K CHARACTERISTIC C MAXIMUM RATING (Ta=25) P N P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 3 Single diode loaded. Double diode loaded. (Square wave) t = 100s IFSM t = 10ms 9 A 3 A 1.7 A Power Dissipation PD 250* mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range 2 1 mA 125 t = 1s Surge Current 2. ANODE 2 3. ANODE 1/ CATHODE 2 225 IF Forward Current 1. CATHODE 1 SOT-23 Marking Lot No. Type Name Note : * Device mounted on a FR4 Printed-Circuit Board (PCB) JC ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. IF=100mA - - 1.0 IF=200mA - - 1.25 VR=200V - - 0.1 VR=200V, Tj=150 - - 100 VF Forward Voltage V A IR Reverse Current UNIT Total Capacitance CT VR=0V, f=1MHz - - 2 pF Reverse Recovery Time trr IF=10mA, IR=10mA, IRM=1mA - - 50 ns 2010. 11. 23 Revision No : 0 1/2 BAV23S 2010. 11. 23 Revision No : 0 2/2