2010. 11. 23 1/2
SEMICONDUCTOR
TECHNICAL DATA
BAV23S
SILICON EPITAXIAL PLANAR DIODE
Revision No : 0
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
21
3
1. CATHODE 1
2. ANODE 2
3. ANODE 1/ CATHODE 2
Type Name
Marking
Lot No.
J C
High Voltage Switching.
FEATURES
·Low Leakage Current.
·Repetitive Peak Reverse Voltage : VRRM≦250V.
·Low Capacitance : CT≦2pF.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage VF
IF=100mA - - 1.0
V
IF=200mA - - 1.25
Reverse Current IR
VR=200V - - 0.1 μA
VR=200V, Tj=150℃- - 100
Total Capacitance CTVR=0V, f=1MHz - - 2 pF
Reverse Recovery Time trr IF=10mA, IR=10mA, IRM=1mA - - 50 ns
Note : * Device mounted on a FR4 Printed-Circuit Board (PCB)
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 250 V
Reverse Voltage VR200 V
Maximum (Peak) Forward Current IFM 625 mA
Forward Current
Single diode loaded. IF
225
mA
Double diode loaded. 125
Surge Current
(Square wave)
t = 1μs
IFSM
9 A
t = 100μs3 A
1.7 At = 10ms
Power Dissipation PD250* mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
2010. 11. 23 2/2
BAV23S
Revision No : 0
