BCR3PM-12L Triac Low Power Use REJ03G0301-0100 Rev.1.00 Aug.20.2004 Features * * * * * Insulated Type * Planar Passivation Type * UL Recognized : Yellow Card No. E223904 File No. E80271 IT (RMS) : 3 A VDRM : 600 V IFGTI, IRGTI, IRGT : 20 mA (10 mA)Note5 Viso : 2000 V Outline TO-220F 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid driver, small motor control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00, Aug.20.2004, page 1 of 13 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR3PM-12L Parameter RMS on-state current Symbol IT (RMS) Ratings 3.0 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG (AV) VGM IGM Tj Tstg -- Viso 3 0.3 6 0.5 - 40 to +125 - 40 to +125 2.0 2000 W W V A C C g V Symbol Min. Typ. Max. Unit IDRM VTM -- -- -- -- 2.0 1.5 mA V Tj = 125C, VDRM applied Tc = 25C, ITM = 4.5 A, Instantaneous measurement I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360 conduction, Tc = 107C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Gate trigger voltageNote2 VFGT VRGT VRGT -- -- -- -- -- -- 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT -- -- -- -- -- -- 20Note5 20Note5 20Note5 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD Rth (j-c) (dv/dt)c 0.2 -- 5 -- -- -- -- 4.5 -- V C/W V/s Gate non-trigger voltage Thermal resistance Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT 10 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = -1.5 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00, Aug.20.2004, page 2 of 13 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR3PM-12L Performance Curves 102 7 Tj = 25C 5 3 2 Surge On-State Current (A) 100 7 5 3 2 -1 15 10 5 2 3 5 7 10 1 2 3 5 7 10 Gate Trigger Current vs. Junction Temperature PGM = 3W PG(AV) = 0.3W IGM = 0.5A VGT IRGT I IFGT I, IRGT III VGD = 0.2V 10-1 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 20 Gate Characteristics (I, II and III) 0 103 7 5 3 2 2 Typical Example IRGT III 102 I I 7 FGT I, RGT I 5 3 2 1 10 -60 -40-20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 3 10 7 5 25 Conduction Time (Cycles at 60Hz) 1 10 7 5 3 2 30 On-State Voltage (V) 102 7 5 3 2 10 7 5 3 2 35 0 0 10 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Voltage (V) 40 101 7 5 3 2 10 Rated Surge On-State Current Typical Example 3 2 2 10 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140 Junction Temperature (C) Rev.1.00, Aug.20.2004, page 3 of 13 Transient Thermal Impedance (C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 Conduction Time (Cycles at 60Hz) BCR3PM-12L Allowable Case Temperature vs. RMS On-State Current 160 4.5 140 4.0 360 Conduction 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 100 Curves apply regardless of conduction angle 80 60 40 360 Conduction 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 inductive loads 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 160 140 140 120 100 120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3 80 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 Ambient Temperature (C) Ambient Temperature (C) 120 20 Resistive, 0.5 0 0 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Case Temperature (C) 5.0 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 105 7 5 3 2 Typical Example 104 7 5 3 2 3 10 7 5 3 2 2 10 -60 -40-20 0 20 40 60 80 100 120 140 Junction Temperature (C) Rev.1.00, Aug.20.2004, page 4 of 13 Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 103 7 5 3.0 Typical Example 3 2 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140 Junction Temperature (C) 103 7 5 3 2 Distribution 102 7 5 3 2 T2+, G- Typical Example 1 10 7 5 3 T2+, G+ Typical Example 2 T2-, G- 0 10 -60 -40-20 0 20 40 60 80 100 120 140 Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100 120 140 Junction Temperature (C) Junction Temperature (C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Commutation Characteristics 160 Typical Example Tj = 125C 140 Critical Rate of Rise of Off-State Commutating Voltage (V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Latching Current (mA) Latching Current vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) BCR3PM-12L 120 100 80 60 III Quadrant 40 20 I Quadrant 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 7 5 3 2 1 10 7 5 Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz III Quadrant Minimum 3 Characteristics Value 2 100 7 0 10 Rate of Rise of Off-State Voltage (V/s) Gate Trigger Current vs. Gate Current Pulse Width Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time I Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 3 10 7 5 3 2 6 Typical Example 6 IRGT III IRGT I IFGT I A 6V V 102 7 5 6 A 6V 2 3 5 7 10 1 2 3 5 7 10 Gate Current Pulse Width (s) Rev.1.00, Aug.20.2004, page 5 of 13 2 V V 330 Test Procedure II Test Procedure I 3 2 101 0 10 A 6V 330 330 Test Procedure III BCR3PM-12L Package Dimensions TO-220F EIAJ Package Code JEDEC Code Conforms Mass (g) (reference value) Lead Material 2.0 Cu alloy 10.5 max 2.8 17 8.5 5.0 1.2 5.2 3.6 3.2 0.2 13.5 min 1.3 max 0.8 0.5 2.54 2.6 Symbol 4.5 2.54 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 13 Standard order code example BCR3PM-12LA BCR3PM-12LA-A8 BCR3PM-12L (The product guaranteed maximum junction temperature of 150C) BCR3PM-12L Triac Low Power Use (The product guaranteed maximum junction temperature of 150C) Features * IT (RMS) : 3 A * VDRM : 600 V * IFGTI, IRGTI, IRGT : 20 mA (10 mA)Note5 * Viso : 2000 V * Insulated Type * Planar Passivation Type Outline TO-220F 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid driver, small motor control, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00, Aug.20.2004, page 7 of 13 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR3PM-12L (The product guaranteed maximum junction temperature of 150C) Parameter RMS on-state current Symbol IT (RMS) Ratings 3.0 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG (AV) VGM IGM Tj Tstg -- Viso 3 0.3 6 0.5 - 40 to +150 - 40 to +150 2.0 2000 W W V A C C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360 conduction, Tc = 132C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions IDRM VTM -- -- -- -- 2.0 1.5 mA V Tj = 150C, VDRM applied Repetitive peak off-state current On-state voltage Tc = 25C, ITM = 4.5 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT -- -- -- -- -- -- 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT -- -- -- -- -- -- 20Note5 20Note5 20Note5 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate non-trigger voltage VGD 0.2/0.1 -- -- V Tj = 125C/150C, VD = 1/2 VDRM Thermal resistance Rth (j-c) -- -- 4.5 C/W Junction to caseNote3 Critical-rate of rise of off-state (dv/dt)c 5/1 -- -- V/s Tj = 125C/150C commutating voltageNote4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT 10 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = -1.5 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00, Aug.20.2004, page 8 of 13 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR3PM-12L (The product guaranteed maximum junction temperature of 150C) Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 10 7 5 3 2 101 7 5 3 2 Tj = 150C 100 7 5 3 2 -1 Gate Voltage (V) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 10 20 15 10 5 2 3 5 7 101 2 3 5 7 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PGM = 3W PG(AV) = 0.3W IGM = 0.5A VGT IRGT I VGD = 0.1V -1 IFGT I, IRGT III 7 5 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 103 7 5 25 Conduction Time (Cycles at 60Hz) 0 10 7 5 3 2 30 On-State Voltage (V) 5 3 2 101 7 5 3 2 35 0 0 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) 10 Tj = 25C Surge On-State Current (A) 40 103 7 5 3 2 Typical Example IRGT III 2 10 7 5 IFGT I, IRGT I 3 2 1 10 -60 -40-20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) Typical Example 3 2 102 7 5 3 2 1 10 -60 -40-20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Rev.1.00, Aug.20.2004, page 9 of 13 Transient Thermal Impedance (C/W) On-State Current (A) 2 102 2 3 5 7103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 Conduction Time (Cycles at 60Hz) BCR3PM-12L (The product guaranteed maximum junction temperature of 150C) Allowable Case Temperature vs. RMS On-State Current 160 4.5 140 4.0 360 Conduction 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 of conduction angle 100 80 60 40 360 Conduction inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 140 120 100 100 x 100 x t2.3 60 x 60 x t2.3 80 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 160 120 x 120 x t2.3 Ambient Temperature (C) Ambient Temperature (C) 120 Curves apply regardless 20 Resistive, 0.5 0 0 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Case Temperature (C) 5.0 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 6 10 7 5 3 2 5 10 7 5 3 2 4 10 7 5 3 2 3 10 7 5 3 2 2 10 Typical Example -60 -40-20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Rev.1.00, Aug.20.2004, page 10 of 13 Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 103 7 5 3.0 Typical Example 3 2 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) BCR3PM-12L (The product guaranteed maximum junction temperature of 150C) Breakover Voltage vs. Junction Temperature Distribution T2+, G- Typical Example 102 7 5 3 2 1 10 7 5 3 T +, G+ 2 2- - Typical Example T2 , G 100 -60 -40-20 0 20 40 60 80 100 120 140 160 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150C) 160 Typical Example Tj = 125C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Junction Temperature (C) 160 Typical Example Tj = 150C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/s) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics (Tj=125C) Commutation Characteristics (Tj=150C) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 1 10 7 5 3 Minimum Characteristics 2 Value 100 7 0 10 Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz Critical Rate of Rise of Off-State Commutating Voltage (V/s) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Latching Current (mA) 3 10 7 5 3 2 Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) Latching Current vs. Junction Temperature III Quadrant I Quadrant 2 3 5 7 10 1 2 3 5 7 10 Rate of Decay of On-State Commutating Current (A/ms) Rev.1.00, Aug.20.2004, page 11 of 13 2 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 1 10 7 5 III Quadrant 3 2 100 7 0 10 Typical Example Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz I Quadrant Minimum Characteristics Value 2 3 5 7 10 1 2 3 5 7 10 Rate of Decay of On-State Commutating Current (A/ms) 2 BCR3PM-12L (The product guaranteed maximum junction temperature of 150C) Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 3 10 7 5 Typical Example IRGT III IRGT I 3 2 IFGT I 102 7 5 3 2 101 0 10 5 7 101 2 3 2 3 5 7 102 Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 6 Recommended Circuit Values Around The Triac Load C1 A 6V V Test Procedure I V A V 330 Test Procedure II 6 6V R1 A 6V 330 330 Test Procedure III Rev.1.00, Aug.20.2004, page 12 of 13 C0 R0 C1 = 0.1 to 0.47F C0 = 0.1F R0 = 100 R1 = 47 to 100 BCR3PM-12L (The product guaranteed maximum junction temperature of 150C) Package Dimensions TO-220F EIAJ Package Code JEDEC Code Conforms Mass (g) (reference value) Lead Material 2.0 Cu alloy 10.5 max 2.8 17 8.5 5.0 1.2 5.2 3.6 3.2 0.2 13.5 min 1.3 max 0.8 0.5 2.54 2.6 Symbol 4.5 2.54 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name +B Lead form Plastic Magazine (Tube) 50 Type name +B - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 13 of 13 Standard order code example BCR3PM-12LB BCR3PM-12LB-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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