Rev.1.00, Aug.20.2004, page 1 of 13
BCR3PM-12L
Triac
Low Power Use
REJ03G0301-0100
Rev.1.00
Aug.20.2004
Features
• IT (RMS) : 3 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGTⅢ : 20 mA (10 mA)Note5
• Viso : 2000 V
• Insulated Type
• Planar Passivation Type
• UL Recognized : Yello w Card No. E223904
File No. E80271
Outline
2
1
3
TO-220F
2
1
3
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
Applications
Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid
driver, small motor control, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter Symbol 12 Unit
Repetitive peak off-state voltageNote1 VDRM 600 V
Non-repetitive peak off-state voltageNote1 VDSM 720 V
BCR3PM-12L
Rev.1.00, Aug.20.2004, page 2 of 13
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 3.0 A Commercial frequency, sine full wave
360° conduction, Tc = 107°C
Surge on-state current ITSM 30 A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t3.7A
2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 3W
Average gate power dissipation PG (AV) 0.3 W
Peak gate voltage VGM 6V
Peak gate current IGM 0.5 A
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125°C, VDRM applied
On-state voltage VTM — — 1.5 V Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
ΙVFGTΙ——1.5V
ΙΙ VRGTΙ——1.5V
Gate trigger voltageNote2
ΙΙΙ VRGTΙΙΙ ——1.5V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
ΙIFGTΙ——20
Note5 mA
ΙΙ IRGTΙ——20
Note5 mA
Gate trigger currentNote2
ΙΙΙ IRGTΙΙΙ ——20
Note5 mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) ——4.5°C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 5 — — V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivit y (IGT ≤ 10 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and curr ent w aveforms
(inductive load)
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR3PM-12L
Rev.1.00, Aug.20.2004, page 3 of 13
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
10
2
10
1
10
0
10
–1
5
7
2
3
5
7
2
3
5
7
2
3
10
0
10
1
10
2
3725 3725
40
30
20
0
5
10
15
25
35
10
2
7
5
3
2
7
5
3
2
7
5
3
2
10
1
10
0
10
–1
–60 –40–20 0 20 40 60 80 100 120 140
23 5710
1
10
0
23 5710
2
23 5710
3
23 5710
0
10
–1
23 57
23 5710
3
23 57
10
1
23 5710
2
10
2
–60 –40–20 0 20 40 60 80 100 120 140
10
3
7
5
3
2
7
5
3
2
10
2
10
1
10
3
7
5
3
2
7
5
3
2
10
2
10
1
0
1.5
1.0
0.5
2.5
2.0
4.5
4.0
3.5
3.0
5.0
Tj = 25°C
P
G(AV)
= 0.3W
P
GM
= 3W
V
GT
I
RGT I
I
FGT I
, I
RGT III
V
GD
= 0.2V
I
GM
=
0.5A
Typical Example
I
RGT III
I
FGT I,
I
RGT I
Typical Example
BCR3PM-12L
Rev.1.00, Aug.20.2004, page 4 of 13
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
0
1.5
1.0
0.5
2.5
2.0
4.5
4.0
3.5
3.0
5.0
0 0.5 1.0 1.5 2.0 4.03.02.5 3.5 0 0.5 1.0 1.5 2.0 4.03.02.5 3.5
0
20
40
80
60
100
120
140
160
0 0.5 1.0 1.5 2.0 2.5 3.0 4.03.5
0
20
40
80
60
100
120
140
160
0
20
40
80
60
100
120
140
160
01.51.00.5 2.0 2.5 3.0
105
7
5
3
2
7
5
3
2
7
5
3
2
104
103
102
–60 –40–20 0 20 40 60 80 100 120 140 –60 –40–20 0 20 40 60 80 100 120 140
103
7
5
3
2
7
5
3
2
102
101
360° Conduction
Resistive,
inductive loads Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
Typical Example Typical Example
BCR3PM-12L
Rev.1.00, Aug.20.2004, page 5 of 13
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Characteristics Test Circuits
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
–60 –40–20 0 20 40 60 80 100 120 140 –60 –40–20 0 20 40 60 80 100 120 140
103
7
5
3
2
7
5
3
2
7
5
3
2
102
101
1000
20
40
80
60
100
120
140
160
330Ω
330Ω
330Ω
6Ω
6Ω
6V
6V
A
V
A
V
2
3
5
7
2
3
5
7
7
101
100
23 5710
2
10123 5710
323 5710
4
0
20
40
80
60
100
120
160
140
103
7
5
3
2
7
5
3
2
102
101
100101102
3725 3725
100101102
3725 372 5
6Ω
6V A
V
T2+, G+
T2–, G–Typical Example
T2+, G–
Typical Example
Distribution
Typical Example
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 125°C
I
T = 4A
τ = 500µs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
Minimum
Characteristics
Value
Typical Example
IFGT I
IRGT I
IRGT III
BCR3PM-12L
Rev.1.00, Aug.20.2004, page 6 of 13
Package Dimensions
TO-220F
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
2.0 Cu alloyConforms
Symbol Dimension in Millimeters
Min Typ Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
10.5 max
1.3 max
5.2
2.54 2.54
2.8
0.5 2.6
0.8
φ 3.2 ± 0.2
8.5
1.2
5.0
17
3.6
4.5
13.5 min
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 100 Type name +A BCR3PM-1 2LA
Lead form Plastic Magazine (Tube) 50 Type name +A – Lead forming code BCR3PM-12LA-A8
Note : Please confirm the specification about the shipping in detai l.
BCR3PM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 7 of 13
BCR3PM-12L
Triac
Low Power Use
(The product guaranteed maximum junction temperature of 150°C)
Features
• IT (RMS) : 3 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGTⅢ : 20 mA (10 mA)Note5
• Viso : 2000 V
• Insulated Type
• Planar Passivation Type
Outline
2
1
3
TO-220F
2
1
3
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
Applications
Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid
driver, small motor control, and other general purpose control applications
Warning
1. Refer to the recommended circuit values aroun d the triac before using.
2. Be sure to exchange the specification before using. Otherwi se, ge neral triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Voltage class
Parameter Symbol 12 Unit
Repetitive peak off-state voltageNote1 VDRM 600 V
Non-repetitive peak off-state voltageNote1 VDSM 720 V
BCR3PM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 8 of 13
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 3.0 A Commercial frequency, sine full wave
360° conduction, Tc = 132°C
Surge on-state current ITSM 30 A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t3.7A
2sValue corresponding to 1 cycle of ha lf
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 3W
Average gate power dissipation PG (AV) 0.3 W
Peak gate voltage VGM 6V
Peak gate current IGM 0.5 A
Junction temperature Tj – 40 to +150 °C
Storage temperature Tstg – 40 to +150 °C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150°C, VDRM applied
On-state voltage VTM ——1.5V
Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
ΙVFGTΙ——1.5V
ΙΙ VRGTΙ——1.5V
Gate trigger voltageNote2
ΙΙΙ VRGTΙΙΙ ——1.5V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
ΙIFGTΙ——20
Note5 mA
ΙΙ IRGTΙ——20
Note5 mA
Gate trigger currentNote2
ΙΙΙ IRGTΙΙΙ ——20
Note5 mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage VGD 0.2/0.1 — — V Tj = 125°C/150°C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) ——4.5°C/W Junction to caseNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 5/1 — — V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivit y (IGT ≤ 10 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and curr ent w aveforms
(inductive load)
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR3PM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 9 of 13
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
4.00.51.52.53.51.0 2.0 3.0
10
2
10
1
10
0
10
–1
5
7
2
3
5
7
2
3
5
7
2
3
40
0
5
10
15
20
25
35
30
10
0
10
1
10
2
3725 372 5
23 5710
1
10
0
23 5710
2
23 5710
3
23 5710
3
23 5710
2
10
3
7
5
3
2
7
5
3
2
10
2
10
1
10
3
7
5
3
2
7
5
3
2
10
2
10
1
23 5710
0
10
–1
23 5710
1
23 5710
2
0
1.5
1.0
0.5
2.5
2.0
4.5
4.0
3.5
3.0
5.0
5
3
2
5
3
2
7
5
3
2
7
5
7
10
1
10
0
10
–1
–60 –40–20 0 20 40 60 80 100 120 160140
–60 –40–20 0 20 40 60 80 100 120 160140
Tj = 25°C
Tj = 150°C
P
GM
= 3W
P
G(AV)
= 0.3W
V
GT
I
RGT I
I
FGT I
, I
RGT III
V
GD
= 0.1V
I
GM
=
0.5A
Typical Example
I
RGT III
I
FGT I,
I
RGT I
Typical Example
BCR3PM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 10 of 13
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
0
1.5
1.0
0.5
2.5
2.0
4.5
4.0
3.5
3.0
5.0
0 0.5 1.0 1.5 2.0 4.03.02.5 3.5 0 0.5 1.0 1.5 2.0 4.03.02.5 3.5
0
20
40
80
60
100
120
140
160
0
20
40
80
60
100
120
140
160
0 0.5 1.0 1.5 2.0 2.5 3.0 4.03.5 0 1.51.00.5 2.0 2.5 3.0
0
20
40
80
60
100
120
140
160
103
7
5
3
2
7
5
3
2
102
101
–60 –40–20 0 20 40 60 80 100 120 160140 –60 –40–20 0 20 40 60 80 100 120 160140
10
6
10
2
7
5
3
2
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
360° Conduction
Resistive,
inductive loads
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Curves apply regardless of
conduction angle
Resistive, inductive loads
Natural convection
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Typical Example Typical Example
BCR3PM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 11 of 13
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
0
20
40
80
60
100
120
140
160
–60 –40–20 0 20 40 60 80 100 120 160140–60 –40–20 0 20 40 60 80 100 120 160140
103
7
5
3
2
7
5
3
2
7
5
3
2
102
101
100
23 5710
2
10
1
23 5710
3
23 5710
4
0
20
40
80
60
100
120
160
140
23 5710
2
10
1
23 5710
3
23 5710
4
0
20
40
80
60
100
120
160
140
2
3
5
7
2
3
5
7
7
101
100
100101102
3725 3725
2
3
5
7
2
3
5
7
7
101
100
100101102
3725 3725
T
2+, G+
T2–, G–Typical Example
T2+, G–
Typical Example
Distribution
Typical Example
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Typical Example
Tj = 150°C
III Quadrant
I Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
Minimum
Characteristics
Value
I Quadrant
III Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
Minimum
Characteristics
Value
BCR3PM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 12 of 13
C1 = 0.1 to 0.47µF
R1 = 47 to 100Ω
C0 = 0.1µF
R0 = 100Ω
Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
10
3
7
5
3
2
7
5
3
2
102
101
100101102
3725 372 5
330Ω
330Ω
330Ω
C
1
C
0
R
0
R
1
6Ω
6Ω
6V
6V
A
V
A
V
6Ω
6V A
V
Typical Example
I
FGT I
I
RGT I
I
RGT III
Load
BCR3PM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 13 of 13
Package Dimensions
TO-220F
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
2.0 Cu alloyConforms
Symbol Dimension in Millimeters
Min Typ Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
10.5 max
1.3 max
5.2
2.54 2.54
2.8
0.5 2.6
0.8
φ 3.2 ± 0.2
8.5
1.2
5.0
17
3.6
4.5
13.5 min
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 100 Type name +B BCR3PM-1 2LB
Lead form Plastic Magazine (Tube) 50 Type name +B – Lead forming code BCR3PM-12LB-A8
Note : Please confirm the specification about the shipping in detai l.
Keep safety first in your circuit designs!
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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