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1N21WE Information
Category » Diodes
Class » UHF/Microwave Mixer Diodes
Type » General Purpose
1N21WE Specifications
Military/High-Rel : N
V(RRM)(V) Rep.Pk.Rev. Voltage :
Band : S
Test Freq : 3.1G
Frequency Min. (Hz) :
Frequency Max. (Hz) :
V(FM) Max.(V) Forward Voltage :
Ct{Cj} Nom. (F) Junction Cap. :
NR Max. :
Noise Figure Max. (dB) : 7.0
Maximum Conversion Loss (dB) :
I(RM) Max.(A) Reverse Current :
Inp VSWR Max. : 1.3
If Imped. Min : 350
If Imped. Max. : 450
Power In (test) : 0.5m
R(load) (Ohms) :
Zm (test) :
Burnout Abs Max. : 5.0
Semiconductor Material : Silicon
Maximum Operating Temp (шC) :
Package Style : DO-23
Mounting Style : T
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1N21WE Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di...
http://www.americanmicrosemi.com/information/spec/?ss_pn=1N21WE
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1N21WE Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di...
http://www.americanmicrosemi.com/information/spec/?ss_pn=1N21WE
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