UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A / PN2222A
!Features
1) BVCEO > 40V (IC=10mA)
2) Complements the UMT2907A / SST2907A
/ MMST2907A / PN2907A.
!Package, marking, and packaging specifications
Part No.
UMT2222A
UMT3
R1P
T106
3000
SST2222A
SST3
R1P
T116
3000
MMST2222A
SMT3
R1P
T146
3000
PN2222A
TO-92
−
T93
3000
Packaging type
Marking
Code
Basic ordering unit
(pieces)
!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
75
40
6
0.6
0.35
150
−
55
∼ +
150
Unit
V
V
V
A
W
W
W
P
C
0.2
0.625
SST2222A
UMT2222A,SST2222A,
MMST2222A
PN2222A
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
∗
When mounted on a 7 x 5 x 0.6 mm ceramic board
!External dimensions (Units : mm)
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
UMT2222A
SST2222A
MMST2222A
PN2222A
0
∼
0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.06
+0.1
−0.05
(2)
(1)
(3)
0
∼
0.1
2.8
±
0.2
1.6
0.3 ∼ 0.6
1.1
0.8±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.06
+0.1
−0.05
(2)
(1)
(3)
0
∼
0.1
(2)(1)
(3)
0.1 ∼ 0.4
2.1
±
0.1
1.25
±
0.1
0.9±0.1
0.2
0.7
±
0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
−0
4.8
±
0.2
(12.7Min.)
2.5Min.
4.8±0.2 3.7±0.2
50.45 2.3
0.5±0.1
−0.05
+0.15
2.5+0.3
−0.1
(1) (2) (3)
All terminals have same dimensions
All terminals have same dimensions
All terminals have same dimensions
!Electrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
75
40
6
−
−
−
−
−
−
−
−
−
−
100
100
V
V
V
nA
nA
I
C
=
10µA
I
C
=
10mA
I
E
=
10µA
V
CB
=
60V
V
EB
=
3V
−−2
V
BE(sat)
0.6 −1.2 V
−−1I
C
/I
B
=
500mA/50mA
V
CE(sat)
−−0.3 VI
C
/I
B
=
150mA/15mA
I
C
/I
B
=
500mA/50mA
I
C
/I
B
=
150mA/15mA
40 −−
50 −−−
h
FE
75 −−
50 −−
35 −− V
CE
=
10V , I
C
=
0.1mA
V
CE
=
10V , I
C
=1
mA
V
CE
=
10V , I
C
=
10mA
V
CE
=
1V , I
C
=
150mA
100 −300 V
CE
=
10V , I
C
=
150mA
V
CE
=
10V , I
C
=
500mA
f
T
Cob 300
−
−
−
−
8MHz
pF V
CE
=
20V , I
C
=−
20mA, f
=
100MHz
V
CB
=
10V , f
=
100kHz
Cib −−25 pF V
EB
=
0.5V , f
=
100kHz
td −−10 ns V
CC
=
30V , V
BE(OFF)
=
0.5V , I
C
=
150mA , I
B1
=
15mA
V
CC
=
30V , V
BE(OFF)
=
0.5V , I
C
=
150mA , I
B1
=
15mA
tr −−25 ns
tstg −−225 ns V
CC
=
30V , I
C
=
150mA , I
B1
=−
I
B2
=
15mA
V
CC
=
30V , I
C
=
150mA , I
B1
=−
I
B2
=
15mA
tf −−60 ns
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
!Electrical characteristic curves
0
50
100
100 5
I
B
=0µA
100
200
400
500
600
300
Ta=25°C
COLLECTOR CURRENT : Ic
(mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
0.1 101.0 100 1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CE
=
10V
1V
Fig.3 DC current gain vs. collector current(Ι)
1.0 10 100 1000
0.2
0.3
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta=25°C
I
C
/ I
B
=10
Fig.2 Collector-emitter saturation
voltage vs. collector current
0.1 101.0 100 1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(
mA)
Ta
=125°C
V
CE
=
10V
25
°C
−55
°C
Fig.4 DC current gain vs. collector current(ΙΙ)
0.1 101.0 100 1000
100
1000
10
AC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(
mA)
Ta
=25°C
VCE
=
10V
f
=
1kHz
Fig.5 AC current gain vs. collector current
1.0 10 100 1000
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta=25°C
I
C
/ I
B
=10
Fig.6 Base-emitter saturation
voltage vs. collector current
UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
1 10 100 1000
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER VOLTAGE : V
BE(ON)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CE
=
10V
Fig.7 Grounded emitter propagation
characteristics
1.0 10 100 1000
100
1000
10
TURN ON TIME : ton(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
I
C
/ I
B
=
10
V
CC
=
30V
10V
Fig.8 Turn-on time vs. collector
current
1.0 10 100 1000
100
500
5
10
RISE TIME : tr(ns)
COLLECTOR CURRENT : Ic
(mA)
Ta
=25°C
V
CC
=
30V
I
C
/ I
B
=
10
Fig.9 Rise time vs. collector
current
1.0 10 100 1000
100
1000
10
STORAGE TIME : Ts(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
Fig.10 Storage time vs. collector
current
1.0 10 100 1000
100
1000
10
FALL TIME : tf(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=25°C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
Fig.11 Fall time vs. collector
current
0.1 1.0 10 100
10
100
1
CAPACITANCE(pF)
REVERSE BIAS VOLTAGE(V)
Ta
=25°C
f
=
1MHz
Cib
Cob
Fig.12 Input / output capacitance
vs. voltage
110 100 1000
10
1
100
0.1
COLLECTOR-EMITTER VOLTAGE : V
CE(V)
COLLECTOR CURRENT : Ic
(mA)
Ta
=25°C
100MHz
200MHz
250MHz 300MHz
250MHz
Fig.13 Gain bandwidth product
1.0 10 100 1000
100
1000
10
CURRENT GAIN-BANDWIDTH PRODUCT
(MHz)
COLLECTOR CURRENT : Ic
(mA)
Ta
=25°C
V
CE
=
10V
Fig.14 Gain bandwidth product
vs. collector current
