A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCBO IC = 50 mA 36 V
BVCES IC = 100 mA 36 V
BVCEO IC = 100 mA 18 V
BVEBO IE = 10 mA 4.0 V
ICES VCE = 12.5 V 15 mA
hFE VCE = 5.0 V IC = 5.0 A 20 --- ---
COB VCB = 12.5 V f = 1.0 MHz
400 pF
PG
ηηC VCC = 12.5 V POUT = 100 W f = 50 MHz 7.0 60 dB
%
NPN SILICON RF POWER TRANSISTOR
VLB100-12
DESCRIPTION:
The ASI VLB100-12 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
VCBO
36 V
VCEO 18 V
VEBO 4.0 V
PDISS
270 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +150 OC
θθJC 0.65 OC/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10740
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H.003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
IK
J
.112x45°
FULL R
C
E
B
G
D F
AL
Ø.125 NOM.
.125 / 3.18
.495 / 12.57 .505 / 12.83
.280 / 7.11
