Approved | Checked Designed ; 7 \> DEVELOPMENT SPECIFICATION we S ye P LNJ406K54UX Sh AY T Y P Ej Amber Light Emitting Diode APPLICATION # Indicators MATERIAL InGaAlP OU TL IN EY Attached ABSOLUTE P 2 1FP IFBC VR Topr Tstg MAX IMUM 50 60 20 4 25~t85 . ~80~+100 RAT INGS5S Ww mA mA y c c CONDITION] Ta=25+3 C Test Specification Item Symbol] Condition Typ iat Unit Min Max Forward Voltage VF IF=10 mA 2.0 2.3 V Reverse Leakage Curreni IR VR= 4 100 uA Luminous Intensity Id IF=10 mA + DC 8.5 3.9 med Peak Emission Wavelength | Ap IF=10 mA - DC 595 nn Spectral Line Half Width} AA IF=10 mA - DC 15 no % - The Condition of IFP is duty 10%, Pulse width | ms - Please contact the Panasonic local office if you design at Jow current {below 1.0 mA DC) or pulse current operation and have any questions. NOTE %*1 Soldering conditions. Refer to handling note. %2 Care should be taken that soldering is done within 3-days afier opening the dry package and ree}. 3 Package:Light yellow diffusion type #4 A InGaAlP LED is sensitive to static electricity and care should be fully taken in handling 11 Particularly, when an overvoliage is applied, which exceeds the absolute maximum rating of ihe InGaAlP LED its energy damages the LED Therefore, iake utmost proactive measures againsi static electricity and surge as to building an assembly line and handling the LED halfway the process {1) Check the entire drive circuii including the power source. For example, a surge current, eic., generated at power-on/off must noi exceed the absolute maximum rafing of the LED. Also, inseri an appropriate protective circuit into the LED drive circuit. (2) Beware of destruction by static electricity in handling the LED As proactive measures against static electricily conductive mat on the floor, wear semiconductive work uniform and shoes, and use semiconductive coniainers. Also, be sure to earth the nose of a soldering iron. It is recommended to use an ionizer, e{c., eleciriciiy may be generaled easily it is effective to earth your body {via 1MQ), spread in the facility or environment where stalic Nov. 26. 1996 Panasonic KAGOSHIMA MATSUSHITA ELECTRONICS CO. , LTD. KB-H-022-01 8BApproved Checked Designed DEVELOPMENT SPECIFICATION = \s ne * aN y ie . LNJ406K54UX P/N: as rs KA NS 2 <= E > b = 500 ~ 300 a - ~ a wa oa = - 2 100 = 5 a o E50 a ~ . 30 - ~ ; = 0 = 40 om o -20 20 40 60 a0 100 Re Forward Voltage VF {(V) Ambient Temperature Ta (* C} IF + Ta 25 50. ~ < aa. 20 \ ~ a fio. 7 &. & \ wo ~ bon _ - = 61d \ ~ 1. & ~ - 0. | = e e co Ga o eB kh = il 10 360650 190 0 24 4a 60 go 100 Forward Current IF (mA} Ambien! Temperature Ta ( } Nov. 27. 1996 Panasonic KAGOSHIMA MATSUSHITA ELECTRONICS CO., LTD. KB-H-022-018BApproved| Checked |Designed DEVELOPMENT SPECIFICATION res oo p/n: LNJ406K54UX Relative Luminous TEntensity Wavelength Characteristics 120 se IF=10 mA Ta=25C > 100 ; a 80 a = 60 o a a = 40 oy | : IL || 2 YUN 500 600 700 g00 Wavelength (om) Directive Characteristics 0 20 44 60 a0 100 109 ao 60 40 2 Relative Luminous Intensity (%) Nov. 27. 1996 Panasonic KAGOSHIMA MATSUSHITA ELECTRONICS CO., LTD. KB-H-022-018BApproved| Checked Designed DEVELOPMENT SPECIFICATION SS > er (OUTLINE) > y A P/N: : ue . - ao o 7 ft in IH o 7 = Y 5 __ oo a] = . a [ hoo _ 2 = CATHODE ANODE Oo be Oo {NOTE) 1. Unit: mm 2. Tolerance unless specified is +0. 2. 3.Measurement of the package doesnt include Bate projection. 4. Corner of the package is R Q. 2max. . Projection s tolerance of the package is 0. 2max. Nov. 27. 1996 Panasonic KAGOSHIMA MATSUSHITA ELECTRONICS CO., LTD KB-H-Q22-G188