2SK2958(L),2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-568B (Z) 3rd. Edition Jul. 1998 Features * Low on-resistance R DS(on) = 5.5m typ. * 4V gate drive devices. * High speed switching Outline LDPAK 4 4 D 1 G 1 S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2958(L),2SK2958(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID 75 A 300 A 75 A 100 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 -- -- V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Zero gate voltege drain current I DSS -- -- 10 A VDS = 30 V, VGS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.0 V I D = 1mA, VDS = 10V Static drain to source on state resistance RDS(on) -- 5.5 7.0 m I D = 40A, VGS = 10V Note3 Static drain to source on state resistance RDS(on) -- 9.0 14.0 m I D = 40A, VGS = 4V Note3 Forward transfer admittance |yfs| 35 60 -- S I D = 40A, VDS = 10V Note3 Input capacitance Ciss -- 4100 -- pF VDS = 10V Output capacitance Coss -- 2700 -- pF VGS = 0 Reverse transfer capacitance Crss -- 800 -- pF f = 1MHz Turn-on delay time t d(on) -- 45 -- ns VGS = 10V, ID = 40A Rise time tr -- 430 -- ns RL = 0.25 Turn-off delay time t d(off) -- 460 -- ns Fall time tf -- 440 -- ns Body-drain diode forward voltage VDF -- 1.0 -- V I F = 75A, VGS = 0 Body-drain diode reverse recovery time t rr -- 90 -- ns I F = 75A, VGS = 0 diF/ dt =50A/s Note: 2 3. Pulse test 2SK2958(L),2SK2958(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 160 1000 10 I D (A) 120 Drain Current Channel Dissipation Pch (W) 300 80 40 100 PW 30 DC 10 3 1 10 s 0 1 m s s 0m s =1 (1 Op sh e ot) (T rati c = on 25 C ) Operation in this area is limited by R DS(on) 0.3 0 50 100 150 0.1 Ta = 25C 3 0.1 0.3 1 10 Drain to Source Voltage V 200 Case Temperature Tc (C) 30 (V) DS 100 Typical Output Characteristics Typical Transfer Characteristics 6V 5V 4V Pulse Test 3.5 V 60 40 Drain Current Drain Current I D (A) 80 VGS = 10 V 100 I D (A) 100 3V 20 80 V DS = 10 V Pulse Test 60 25C 40 75C 20 Tc = -25C 2.5 V 0 2 4 6 Drain to Source Voltage V 8 DS(V) 10 0 1 2 3 Gate to Source Voltage V 4 5 (V) GS 3 2SK2958(L),2SK2958(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.4 0.3 I D = 50 A 0.2 20 A 0.1 10 A Drain to Source On State Resistance R DS(on) (mW) Drain to Source Saturation Voltage V DS(on) (V) 0.5 Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 20 VGS = 4 V 10 10 V 5 2 1 4 12 4 8 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 I D = 50 A 20 A 10 A 12 VGS = 4 V 8 50 A 10, 20 A 4 0 -40 10 V 0 40 80 120 160 Case Temperature Tc (C) 1 3 10 30 100 300 Drain Current I D (A) 1000 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance R DS(on) (mW) 0 500 200 V DS = 10 V Pulse Test 100 50 Tc = -25 C 20 25 C 10 5 2 75 C 1 0.5 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 2SK2958(L),2SK2958(S) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 500 30000 Capacitance C (pF) 100000 Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 0.1 10000 Crss 300 di / dt = 50 A / s V GS = 0, Ta = 25 C 0 0 12 8 VDD = 25 V 10 V 5V 80 160 240 320 Gate Charge Qg (nc) 4 0 400 V GS (V) 5000 2000 Switching Time t (ns) 10 V DS 16 10 20 30 40 50 Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Drain to Source Voltage VDD = 5 V 10 V 25 V 30 20 20 V GS 40 VGS = 0 f = 1 MHz 100 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) I D = 75 A Coss 1000 Dynamic Input Characteristics 50 Ciss 3000 1000 500 200 Switching Characteristics V GS = 10 V, V DD = 10 V PW = 5 s, duty < 1 % t d(off) tf tr 100 50 t d(on) 20 10 5 5 10 20 50 100 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 2SK2958(L),2SK2958(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 100 10 V 80 5V 60 V GS = 0, -5 V 40 20 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance g s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.1 0.03 0.01 10 6 0.2 q ch - c(t) = g s (t) * q ch - c q ch - c = 1.25 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 100 D= PW T PW T 1m 10 m 100 m Pulse Width PW (S) 1 10 2SK2958(L),2SK2958(S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50W V DD = 10 V Vout 10% 10% 90% td(on) tr 10% 90% td(off) tf 7 2SK2958(L),2SK2958(S) Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 8 LDPAK (L) -- -- 1.4 g 2SK2958(L),2SK2958(S) As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(1) -- -- 1.3 g 9 2SK2958(L),2SK2958(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 LDPAK (S)-(2) -- -- 1.35 g 2SK2958(L),2SK2958(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 11