2SK2958(L),2SK2958(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-568B (Z)
3rd. Edition
Jul. 1998
Features
• Low on-resistance
RDS(on) = 5.5mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
123
4
123
4
LDPAK
G
D
S
2SK2958(L),2SK2958(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 30 V
Gate to source voltage VGSS ±20 V
Drain current ID75 A
Drain peak current ID(pulse)Note1 300 A
Body-drain diode reverse drain current IDR 75 A
Channel dissipation Pch Note2 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30——V I
D
= 10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20——V I
G
= ±100µA, VDS = 0
Zero gate voltege drain current IDSS ——10µAV
DS = 30 V, VGS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16V, VDS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1mA, VDS = 10V
Static drain to source on state
resistance RDS(on) — 5.5 7.0 mΩID = 40A, VGS = 10V Note3
Static drain to source on state
resistance RDS(on) — 9.0 14.0 mΩID = 40A, VGS = 4V Note3
Forward transfer admittance |yfs|3560—S I
D
= 40A, VDS = 10V Note3
Input capacitance Ciss — 4100 — pF VDS = 10V
Output capacitance Coss — 2700 — pF VGS = 0
Reverse transfer capacitance Crss — 800 — pF f = 1MHz
Turn-on delay time td(on) — 45 — ns VGS = 10V, ID = 40A
Rise time tr— 430 — ns RL = 0.25Ω
Turn-off delay time td(off) — 460 — ns
Fall time tf— 440 — ns
Body–drain diode forward voltage VDF — 1.0 — V IF = 75A, VGS = 0
Body–drain diode reverse
recovery time trr — 90 — ns IF = 75A, VGS = 0
diF/ dt =50A/µs
Note: 3. Pulse test
2SK2958(L),2SK2958(S)
3
Main Characteristics
160
120
80
050 100 150 200 0.1 0.3 1 310 30 100
100
80
60
40
20
0246810
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25°C
10 µs
100 µs
1 ms
DC Operation
(Tc = 25°C)
Operation in
this area is
limited by R
DS(on)
PW = 10 ms (1 shot)
5 V
4 V 3.5 V
3 V
40
V = 10 V
GS
6 V
2.5 V
100
80
60
40
20
012345
Tc = –25°C
25°C
75°C
V = 10 V
Pulse Test
DS
Pulse Test
2SK2958(L),2SK2958(S)
4
048
12 16 20
20
16
12
8
4
–40 0 40 80 120 160
0
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
V = 4 V
GS
10 V
Pulse Test
R (m )
W
DS(on)
0.5
0.4
0.3
0.2
0.1
Pulse Test
I = 50 A
D
20 A
10 A
1 30 1003
50
2
5
1
10 1000300
20
10
V = 4 V
GS
10 V
Pulse Test
10, 20 A
I = 50 A
D
20 A 10 A
50 A
0.1 0.3 1 3 10 30 100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25 °C
75 °C
25 °C
V = 10 V
Pulse Test
DS
2SK2958(L),2SK2958(S)
5
0.1 0.3 1 3 10 30 100 01020304050
3000
100000
10000
30000
50
40
30
20
10
0
20
16
12
8
4
80 160 240 320 400
0
1000
100
200
20
10
0.1 0.2 210 100
1000
500
100
200
20
50
10
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
1000
300
20
1
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
100
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 75 A
D
V
GS
V
DS
V = 5 V
10 V
25 V
DD
V = 25 V
10 V
5 V
DD
0.5 5
5
2000
5000
500
50
50
V = 10 V, V = 10 V
PW = 5 µs, duty < 1 %
GS DD
r
t
d(on)
t
d(off)
t
tf
2SK2958(L),2SK2958(S)
6
100
80
60
40
20
00.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
V = 0, –5 V
GS
5 V
10 V
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
g
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 1.25 °C/W, Tc = 25 °C
q g q
q
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK2958(L),2SK2958(S)
7
Vin Monitor
D.U.T.
Vin
10 V
RL
V
= 10 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50W
90%
10%
tf
Switching Time Test Circuit Waveform
2SK2958(L),2SK2958(S)
8
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (L)
—
—
1.4 g
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.27 ± 0.2
As of January, 2001
Unit: mm
2SK2958(L),2SK2958(S)
9
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(1)
—
—
1.3 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.15
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK2958(L),2SK2958(S)
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(2)
—
—
1.35 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.2
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
5.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK2958(L),2SK2958(S)
11
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
URL NorthAmerica : http://semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia : http://sicapac.hitachi-asia.com
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
Colophon 2.0
