Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower On-resistance BVDSS -35V
▼ Simple Drive Requirement RDS(ON) 38mΩ
▼ Fast Switching Characteristic ID-25A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.6 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Data and specifications subject to change without notice
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
-55 to 150
Linear Derating Factor
34.7
-55 to 150
Thermal Data Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Continuous Drain Current, VGS @ 10V -16
Pulsed Drain Current1-70
200428051-1/4
AP4419GH/J
Rating
-35
±20
-25
0.28
Pb Free Plating Product
G
D
S
GDSTO-252(H)
GDSTO-251(J)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4419GJ) is available for low-profile applications.
AP4419GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -35 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-16A - - 38 mΩ
VGS=-4.5V, ID=-12A - - 68 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-16A - 14 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-30V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA
QgTotal Gate Charge2ID=-16A - 12 20 nC
Qgs Gate-Source Charge VDS=-30V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8 - nC
td(on) Turn-on Delay Time2VDS=-15V - 12 - ns
trRise Time ID=-16A - 40 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 46 - ns
tfFall Time RD=0.9Ω-56-ns
Ciss Input Capacitance VGS=0V - 700 1120 pF
Coss Output Capacitance VDS=-25V - 180 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 150 - pF
RgGate Resistance f=1.0MHz - 10 15 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-16A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-16A, VGS=0V, - 27 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 17 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP4419GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
0
20
40
60
02468
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC
VG= -3.0 V
-10V
-7.0V
-5.0V
-4.5V
20
50
80
110
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID= -12A
TC=25
℃
0.5
0.8
1.1
1.4
1.7
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=-16A
VG=-10V
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
0
4
8
12
0 0.4 0.8 1.2
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
0
20
40
60
02468
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC= 150 oC-10V
-7.0V
-5.0V
-4.5V
VG= -3.0 V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4/4
AP4419GH/J
Q
VG
-4.5V
QGS QGD
QG
Charge
0
3
6
9
12
048121620
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
VDS =-30V
ID=-16A
100
1000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
10
20
30
40
02468
-VGS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =-5V
1
10
100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
Tc=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC 0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
