DSA 90 C 200 HB
preliminary
Schottky Diode
Symbol Definition
R a t i n g s
Features / Advantages:
Very low Vf
Extremely low switching losses
low Irm values
Improved thermal behaviour
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
typ. max.
I
FSM
I
R
A
V
450
I
FAV
A
V
F
0.96
R
thJC
0.55 K/W
V
R
=
1 2 3
min.
45
t = 10 ms
Applications:
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
V
RRM
V
200
0.9
T
VJ
C=
T
VJ
°C=mA
5
Package:
Part number
V
R
=
T
VJ
C
I
F
=A
V
T
C
= 145°C
rectangular, d = 0.5
P
tot
275 WT
C
°C=
T
VJ
175 °C-55
V
I
RRM
FAV
=
=200
45
45
T
VJ
=45°C
DSA 90 C 200 HB
V
A
200
V
200
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
1.18
T
VJ
°C=25
C
J
260 pF
j
unction capacitance V= V;24 T
125
V
F0
V
0.52
T
VJ
= 175°C
r
F
6.5 Ω
f = 1 MHz = °C25
m
V
0.86
T
VJ
C
I
F
=A
V
45 125
1.14
I
F
=A90
I
F
=A90
2x
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
(50 Hz), sine
V
F
=0.86
V
Housing:
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
TO-247
rIndustry standard outline
rEpoxy meets UL 94V-0
rRoHS compliant
RVJ
mA
IXYS reserves the right to change limits, conditions and dimensions.
© 2008 IXYS all rights reserved
20080605b
Data according to IEC 60747and per diode unless otherwise specified
http://store.iiic.cc/
DSA 90 C 200 HB
preliminary
I
RMS
A
per pin 70
R
thCH
K/W0.25
M
D
Nm1.2
mounting torque 0.8
T
stg
°C150
storage temperature -55
Weight g6
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
F
C
N120
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DSA 90 C 200 HB 502854Tube 30
XXXXXX
YYWW
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
D
S
A
90
C
200
HB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-247AD (3)
=
=
=
1)
1
)
Ma r king on Pr o d uc t
DSA90C200HB
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
RMS
IXYS reserves the right to change limits, conditions and dimensions.
© 2008 IXYS all rights reserved
20080605b
Data according to IEC 60747and per diode unless otherwise specified
http://store.iiic.cc/
DSA 90 C 200 HB
preliminary
Symbol Inches Millimeters
min max min max
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
ØP 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
ØP1 - 0.291 - 7.39
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions.
© 2008 IXYS all rights reserved
20080605b
Data according to IEC 60747and per diode unless otherwise specified
http://store.iiic.cc/
DSA 90 C 200 HB
preliminary
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
10
100
04080120160200
0.001
0.010
0.100
1.000
10.000
0 102030405060708090
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1
0.1
1
0 40 80 120 160
0
10
20
30
40
50
60
70
80
90
100
I
F(AV)
[A]
T
C
[°C]
t[s]
0 50 100 150 200
10
100
1000
C
T
[pF]
I
R
[mA]
I
F
[A]
V
F
[V] V
R
[V] V
R
[V]
Z
thJC
[K/W]
25°C
0.08
DC
0.25
0.33
Single Pulse
d=0.5
T
VJ
= 150°C
I
F(AV)
[A]
P
(AV)
[W]
DSA90C200HB
D=0.5
0.17
T
VJ
=
150°C
125°C
25°C 50°C
75°C
100°C
125°C T
VJ
=25°C
d=
DC
0.5
0.33
0.25
0.17
0.08
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current I
R
versus reverse voltage V
R
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
Fig. 4 Avg: forward current I
F(AV)
versus case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, conditions and dimensions.
© 2008 IXYS all rights reserved
20080605b
Data according to IEC 60747and per diode unless otherwise specified
http://store.iiic.cc/