LOGY NPN SILICON RF or ff OF oo. SMALL SIGAL TRANSISTOR GENERAL DESCRIPTION 2N 5179 is designed for use in high gain, low-noise amplifier , oscillator and mixer circuits. It is also suitable for UHF converter applications, It features high gain-bandwidth product, low noise and low collector-base time constant, ' MAXIMUM RATINGS Continuous Collector Current, I, 50mA Power Dissipation @T =25 C, P, 200m" Power Dissipation @T ese, Py 300mnW Collector-Base Voltage, Vppp 2oV Collector-imitter Voltage, ~ Vapo 12 Emitter-Base Voltage, Vpgo 2.5V Storage Temperature Range, Istg ~65C to + 200C ACTERISTICS PARAMSTER SympoL |MIN. TYP, MaX.| UNITS | TEST CONDITIONS Collector Cutoff Current Logo 20 na Vopr ho 1,70 Gollector Cutoff Curfient ta 1.0 DA TBs ser 1,=0 A 58 GollectorBase Breakdown BY ono 20 T,=0.001mA 5,=0 Voltage Collector Emitter Sustaining Voro(sus) 12 v Tg=3m A 1,0 Voltage Emitter Base Breakdown Voltage] BY, 2.5 i,=0.01mA I,=0. EBO G Voltage Collector Emitter Saturation Vor (sat) 0.4 Vv T=lOmA i=in Voltage Base Emitter Saturation Vig (sat) 1.0 v Ip=l0mA = T=lmA j oltage Collector Base Capacitance Geb 1.0 pF Vagprlov i,=0 =0,1 to 1,.0MHz ae . = ~~, Small Signal Current Gain he e 25 306 , Ty mA Vgpr6 | f=lkHz ony - $ . = ~ i Collector-Base Time Constant Sob 3.0 14 pe iy mA Vggr6 =31,.9MHz 38 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX 3510 2.7.8, MICRO ELECTRONICS LTD. KWUN TONG P. o BOX6SAT? CABLE ADDRESS MICROTRON" FAX: 3-410321 Bee ce a salina mee aoe !wem= CONTINUE _= PARAMETER SYMBOL | MIN. TYP. MAX. | UNIT | TEST CONDITIONS . Transistor Frequency fp 900 1400 2000] MHz T,=5mA Vopm6. 7 . f=1O0MHz - . oy Noise Figure Led dB T.=1.5m A Vo =6V.. R=500hms Socuat Common Emitter Amplifier Gpe 15 ~6aBCOLViA.=6V000 OT .=Sma- = : CE ee, Power Gain . f=200MHz con ye Power Output Pout 20 md Vop=10V E,=lems | f} 5OOMHz OER oi BET