n-channel JFETs Bx | & Siliconix gS e designed for Berformance,curvesNC | 3 eee See Section 5 o e = Analog Switches BENEFITS 2 Low Insertion Loss 0 m Choppers Rps{on) < 30 & (2N3970) . Ampli fiers Good Off-Isolation ID(off) < 250 pA wo * ABSOLUTE MAXIMUM RATINGS (25C) TO-18 See Section 7 Reverse Gate-Drain or Gate-Source Voltage ......... 40 V Gate Current.......... 0.0.00 e eee bene eee ees 50 mA Total Device Dissipation at 25C Case Temperature (Note 1) ...... cece eee eens rn 1.8W D Storage Temperature Range ............. .-65 to +200C Lead Temperature 6 ofc (1/16 from case for 60 seconds) ......... vee. 300C s D s *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N3970 2N3971 2N3972 Characteristic Unit Test Conditions Min | Max | Min | Max | Min | Max 1 BVgss Gate Reverse Breakdown Voltage -40 -40 40 Vv Iq =-1HA, Vps =0 2 \ Drain R c 250 250 250 | pA Vv 20V. 1c <0 ~ rain Reverse Curren = . = >. 3} [o8 500 500 s00{ na | C s 150C 4 i Drain Cutoff C t 250 280 250 | pA v 20V,V 12V rain Uuto urren = =- 5s Diff) 500 500 s00| nA |S Ss 150C 6] aA | VGS(otf) Gate-Source Cutoff Voltage 4 -10 +2 - -0.5 3) V Vps = 20V, Ip =1nA ~|T Saturation Drain Current 7 'pss (Pulsewidth 300 us, duty cycle < 3%) 50 | 150 26 78 5 30| ma | Vos =20V, Vas = 0 3) 2 Ip= S5mA 9] VpDSton) Drain-Source ON Voltage 1.5 Vv Ves =0 Ip = 10mA 10 1 ip =20mA 11 'DS(on) _ Static Drain-Source ON Resistance 30 60 100] Q Ves =90,Ip=1mA 12 D Fds(on) Drain-Source ON Resistance 30 60 100) 2 Vgs=0,Ip=0 f=1kHz 13] y | Ciss Common-Source Input Capacitance 25 25 25 Vos = 20 V, Vgg =0 Tal N Cc Common-Source Reverse Transfer 6 6 6 pF Voce =0, Vas =-12 V f= 1 MHz rss Capacitance DS=9. VGS ; Vop = 10 V, Vesion) = 0 35] s td(on) Turn-On Delay Time 10 15 40 Ipfon) RL VGsioff) 16 | W | t Rise Time 10 15 40 | ns 2N3970 20mA 4502 -10V 7 toff Turn-Off Time 30 60 100 2N3971 10mA 8502 - SV i 2N3972_ 5mA 1.6KQ2 - 3V us = Yop oo - NC * ~DD ~ VDSION} JEDEC registered data. L') (DION) INPUT PULSE SAMPLING SCOPE o NOTE: vin Your RISE TIME 0.25 eq RISE TIME OA ne 5 1. Derate linearly at the rate of 10 mW/C. Focse wort 200 eg INPUT CAPACITANCE 18 pF =e PULSE RATE 550 pps x 1979 Siliconix incorporated2N3970 2N3971 2N3972 iconix APPLICATIONS AAA > Pd > > >R1 SRs | aves o--5 sk cs ' L --- Amplifier Design Chart (Cg for 3 dB Point at 50 Hz) Vpp Rs Ry Ro Cs | Ipp Rp | @, Max Ay (v) (2) | (MQ) | (MQ) | (uFb | mA) {Q) (v) 2N3970 560 1 oo 100 1 1K 3 9 . ad 27K | 3.3 10 100 6 1K] 25 8 | Vpp=15 | 3K 1 Source 7 0 8.5 0.96 Vss = -15 | 7.5K 1 Follower 6 0 8.5 0.96 Vee 18 7.5K 1 eure 6 0 15 0.97 2N3971 2K | 47 11 100 5 1K} 15 8-11 20 330 1 2 100 8 820] 1.5 9 330 1 0 8 820 3 1.9 2K | 47 11 | 100 6 | 2.7K 5 18-24 30 330 1 < 100 8 | 15K] 2.5 15 330 1 oe 0 8] 15K] 55 3.3 Yop = 15 | 47K 1 Source 5 o; ou 0.97 Vsg = -15 Follower 2N3972 10 220 1 0 5 | 2K] 15 35 20 220 1 oo 0 5 | 22K[ 35 7 20 1K 1 12 100 4 | 3.9K 5 38 1K 1 12 100 4 | 56K] 35 40-55 Vpp = 15 | 4.7K 1 Source 25 o| 13 0.98 Vss=-18) 75K 1 Follower 15 o| 13 0.98 =F Siliconix 3-18 1979 Siliconix incerparated