2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
7-2 Document Number: 70240
S-04028—Rev. E, 04-Jun-01
SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4338 2N4339
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –57 –50 –50
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.1 mA–0.3 –1–0.6 –1.8 V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 0.2 0.6 0.5 1.5 mA
VGS = –30 V, VDS = 0 V –2–100 –100 pA
Gate Reverse Current IGSS TA = 150_C–4–100 –100 nA
Gate Operating CurrentbIGVDG = 15 V, ID = 0.1 mA –2
Drain Cutoff Current ID(off) VDS = 15 V, VGS = –5 V 2 50 50 pA
Gate-Source Forward VoltagecVGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward T ransconductance gfs 0.6 1.8 0.8 2.4 mS
Common-Source
Output Conductance gos
VDS = 15 V, VGS = 0 V, f = 1 kHz 5 15 mS
Drain-Source On-Resistance rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz 2500 1700 W
Common-Source
Input Capacitance Ciss 5 7 7
Common-Source
Reverse Transfer Capacitance Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz 1.5 3 3 pF
Equivalent Input Noise VoltagecenVDS = 10 V, VGS = 0 V, f = 1 kHz 6nV⁄
√Hz
Noise Figure NF VDS = 15 V, VGS = 0 V
f = 1 kHz, RG = 1 MW1 1 dB
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –57 –50 –50
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.1 mA–1 –3–2–6V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 1.2 3.6 3 9 mA
VGS = –30 V, VDS = 0 V –2–100 –100 pA
Gate Reverse Current IGSS TA = 150_C–4–100 –100 nA
Gate Operating CurrentbIGVDG = 15 V, ID = 0.1 mA –2
VGS = –5 V 2 50 pA
Drain Cutoff Current ID(off) VDS = 15 V VGS = –10 V 3 70
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V