N-Channel MOSFET 500V, 9.0 A, 0.85 General Description Features The MDP/F9N50B uses advanced Magnachip's MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. VDS = 500V ID = 9.0A RDS(ON) 0.85 MDP/F9N50B is suitable device for SMPS, HID and general purpose applications. Applications @VGS = 10V @VGS = 10V Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Drain-Source Voltage VDSS Gate-Source Voltage TC=25 C Continuous Drain Current ID o TC=100 C (1) IDM o TC=25 C Power Dissipation o Derate above 25 C (1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (3) (4) Single Pulse Avalanche Energy Junction and Storage Temperature Range PD MDF9N50B Unit 500 VGSS o Pulsed Drain Current MDP9N50B V 30 V 9.0 9.0* A 5.5 5.5* A 36 36* A 120 38 W 0.95 0.3 W/ C o EAR 12 mJ dv/dt 4.5 V/ns EAS 300 mJ TJ, Tstg -55~150 o C Id limited by maximum junction temperature Thermal Characteristics Characteristics Symbol MDP9N50B MDF9N50B (1) RJA 62.5 62.5 RJC 1.05 3.3 Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Dec 2011. Version 1.0 (1) 1 Unit o C/W MagnaChip Semiconductor Ltd. MDP9N50B / MDF9N50B N-channel MOSFET 500V MDP9N50B / MDF9N50B Part Number Temp. Range Package Packing RoHS Status o TO-220 Tube Halogen Free o TO-220F Tube Halogen Free MDP9N50BTH -55~150 C MDF9N50BTH -55~150 C Electrical Characteristics (Ta = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 500 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 - 4.0 IDSS VDS = 500V, VGS = 0V - - 1 A VGS = 30V, VDS = 0V - Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance IGSS RDS(ON) VGS = 10V, ID = 4.5A gfs VDS = 30V, ID = 4.5A V - 100 nA 0.72 0.85 - 7 - S - 15.7 - - 3.4 - - 5.3 - - 792 - - 5.0 - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 400V, ID = 9.0A, VGS = 10V (3) nC Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss - 101 - Turn-On td(on) - 14.1 - - 27.3 - - 68 - tf - 37.3 - IS - 9.0 - A 1.4 V Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 250V, ID = 9.0A, (3) RG = 25 pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 9.0A, VGS = 0V IF = 9.0A, dl/dt = 100A/s (3) - 272 ns - 2.0 C Note : 1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C. 2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C. 3. ISD 9.0A, di/dt200A/us, VDDBVDSS, Rg =25, Starting TJ=25C 4. L=6.7mH, IAS=9.0A, VDD=50V, , Rg =25, Starting TJ=25C Dec 2011. Version 1.0 2 MagnaChip Semiconductor Ltd. MDP9N50B / MDF9N50B N-channel MOSFET 500V Ordering Information Vgs=5.0V =5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V 12 1.4 R D S (O N ) [ ] I D ,D rain C urrent [A] 16 1.6 Notes 1. 250 Pulse Test 2. TC=25 8 1.2 1.0 VGS=10V VGS=20V 0.8 4 0.6 0 0 5 10 15 20 25 0.0 2.5 5.0 7.5 VDS,Drain-Source Voltage [V] 12.5 17.5 20.0 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage Notes : 1. VGS = 10 V 2. ID = 4.5A 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 Notes : 1. VGS = 0 V 2. ID = 250 1.1 1.0 0.9 0.8 -50 150 0 50 100 o TJ, Junction Temperature [ C] Notes : 1. VGS = 0 V 2.250s Pulse test IDR Reverse Drain Current [A] I D (A ) 150 25 -55 4 5 6 7 150 25 1 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Dec 2011. Version 1.0 10 0.1 0.2 0.1 3 200 Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. Vds=30V 1 150 o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 10 15.0 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics RDS(ON), (Normalized) Drain-Source On-Resistance 10.0 ID,Drain Current [A] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDP9N50B / MDF9N50B N-channel MOSFET 500V 20 Note : ID = 9.0A 1200 VGS, Gate-Source Voltage [V] 100V 250V 8 Ciss Capacitance [pF] 400V 6 4 Notes ; 1. VGS = 0 V 2. f = 1 MHz 1000 800 600 Crss 400 2 200 0 0 0 2 4 6 8 10 12 14 1 16 Fig.7 Gate Charge Characteristics 10 10 Fig.8 Capacitance Characteristics 2 10 Operation in This Area is Limited by R DS(on) 10 s 100 s 1 ms 1 8 100 ms DC 10 ID, Drain Current [A] 10 ms 10 0 6 4 -1 2 Single Pulse TJ=Max rated TC=25 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] -ID, Drain Current [A] MDP9N50B / MDF9N50B N-channel MOSFET 500V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 1400 10 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 Fig.9 Maximum Safe Operating Area MDP9N50B (TO-220) Fig.10 Maximum Drain Current vs. Case Temperature 10000 single Pulse RthJC = 1.05/W TC = 25 D=0.5 8000 Power (W) Z JC(t), Normalized Thermal Response 0 10 0.2 0.1 -1 10 0.05 0.02 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JC=1.05/W 0.01 single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 4000 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-4 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation - MDP9N50B (TO-220) Fig.11 Transient Thermal Response Curve MDP9N50B (TO-220) Dec 2011. Version 1.0 6000 2000 -2 10 150 TC, Case Temperature [] -VDS, Drain-Source Voltage [V] 4 MagnaChip Semiconductor Ltd. 2 Operation in This Area is Limited by R DS(on) 1 single Pulse RthJC = 3.3/W TC = 25 8000 10 ms 100 ms Power (W) ID, Drain Current [A] 10 10000 10 s 100 s 1 ms DC 10 10 0 4000 -1 2000 Single Pulse TJ=Max rated TC=25 10 6000 0 1E-5 -2 10 -1 10 0 10 1 10 2 1E-3 0.01 0.1 1 10 Fig.14 Single Pulse Maximum Power Dissipation - MDF9N50B (TO-220F) Fig.13 Maximum Safe Operating Area MDF9N50B (TO-220F) Z JC(t), Normalized Thermal Response 1E-4 Pulse Width (s) VDS, Drain-Source Voltage [V] D=0.5 0 10 0.2 0.1 0.05 -1 10 0.02 0.01 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JC=3.3/W single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.15 Transient Thermal Response Curve MDF9N50B (TO-220F) Dec 2011. Version 1.0 5 MagnaChip Semiconductor Ltd. MDP9N50B / MDF9N50B N-channel MOSFET 500V 10 MDP9N50B / MDF9N50B N-channel MOSFET 500V Physical Dimensions 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Dec 2011. Version 1.0 6 MagnaChip Semiconductor Ltd. MDP9N50B / MDF9N50B N-channel MOSFET 500V Physical Dimension 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified Symbol A b b1 C D E e F G L L1 Q Q1 R Dec 2011. Version 1.0 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 7 MagnaChip Semiconductor Ltd. U.S.A Sunnyvale Office 787 N. 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