BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features * * * * * * Mechanical Data * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant (Note 1) "Green" Device (Notes 2 and 3) * * * * * Case: SOT363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Weight: 0.006 grams (approximate) SOT363 Top View D2 G1 S1 S2 G2 D1 Top View Internal Schematic Ordering Information (Note 4) Part Number BSS84DW-7-F BSS84DWQ-13-F Notes: Qualification Commercial Automotive Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information K84 YM Code J Month Code Jan 1 K84 Date Code Key Year 1998 YM K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 K L M N P R S T U V W X Y Z Feb 2 BSS84DW Document number: DS30204 Rev. 14 - 2 Mar 3 Apr 4 May 5 Jun 6 1 of 5 www.diodes.com Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D September 2011 (c) Diodes Incorporated BSS84DW Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 5) Gate-Source Voltage Drain Current (Note 6) Symbol VDSS VDGR VGSS ID Continuous Continuous Value -50 -50 20 -130 Units V V V mA Value 300 417 -55 to +150 Units mW C/W C Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -50 -75 Zero Gate Voltage Drain Current IDSS A A nA IGSS -15 -60 -100 Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time 10 nA VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = 25C VDS = -50V, VGS = 0V, TJ = 125C VDS = -25V, VGS = 0V, TJ = 25C VGS = 20V, VDS = 0V VGS(th) RDS (ON) gFS -0.8 0.05 -1.6 6 -2.0 10 V S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 10 18 ns ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V Notes: V Test Condition 5. RGS 20K. 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 7. Short duration pulse test used to minimize self-heating effect. BSS84DW Document number: DS30204 Rev. 14 - 2 2 of 5 www.diodes.com September 2011 (c) Diodes Incorporated BSS84DW -600 400 TA = 25C ID, DRAIN-SOURCE CURRENT (mA) PD , POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 -500 -400 -300 -200 -100 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 25 -1.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () 10 ID, DRAIN-CURRENT (A) -0.8 -0.6 -0.4 -0.2 -0.0 0 -1 -3 -4 -2 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs. Drain-Source Voltage 0 9 8 7 6 5 4 3 2 T A = 125C 1 0 -5 -2 -3 -4 -6 -7 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage -1 15 TA = 25C 0 -1 -5 -2 -3 -4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 25.0 VGS = -10V ID = -0.13A RDS(ON), ON-RESISTANCE () RDS(ON), ON-RESISTANCE () 12 9 6 3 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V 15.0 VGS = -5V VGS = -4V 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance vs. Junction Temperature BSS84DW Document number: DS30204 Rev. 14 - 2 3 of 5 www.diodes.com 0.0 -0.0 -0.4 -0.6 -0.8 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -0.2 -1.0 September 2011 (c) Diodes Incorporated BSS84DW Package Outline Dimensions A SOT363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0 8 All Dimensions in mm B C H K M J D L F Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X BSS84DW Document number: DS30204 Rev. 14 - 2 4 of 5 www.diodes.com September 2011 (c) Diodes Incorporated BSS84DW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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