ESMT
M24L816512DA
Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008
Revision : 1.1 3/12
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–40°C to +85°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V
DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range Ambient
Temperature (TA) VCC
Extended −25°C to +85°C 2.7V to 3.6V
Industrial −40°C to +85°C 2.7V to 3.6V
DC Electrical Characteristics (Over the Operating Range) [5, 6, 7, 8]
-55 -70
Parameter Description Test Conditions Min. Typ
.[5] Max. Min. Typ.
[5] Max. Unit
VCC Supply Voltage 2.7 3.0 3.6 2.7 3.6 V
VOH Output HIGH
Voltage IOH = −0.1 mA VCC-
0.4
VCC-
0.4 V
VOL Output LOW
Voltage IOL = 0.1 mA 0.4 0.4 V
VIH Input HIGH
Voltage 0.8*
VCC VCC+
0.4V
0.8*
VCC VCC+0
.4V V
VIL Input LOW Voltage f = 0 -0.4 0.4 -0.4 0.4 V
IIX Input Leakage
Current GND ≤VIN < VCC -1 +1 -1 +1
µA
IOZ Output Leakage
Current GND ≤ V
OUT ≤ V
CC, Output Disabled -1 +1 -1 +1
µA
f = fMAX = 1/tRC 11 22 11 17
ICC VCC Operating
Supply Current f = 1 MHz
VCC = 3.6V
IOUT = 0mA
CMOS level 2 5 2 5
mA
ISB1
Automatic CE
Power-Down
Current
—CMOS Inputs
CE ≥VCC − 0.2V, VIN ≥ V
CC − 0.2V, VIN
≤ 0.2V, f = fMAX (Address and Data
Only), f = 0 ( OE , WE , BHE and
BLE )
100 400 100 400 µA
VCC = 3.3V 100 100
ISB2
Automatic CE
Power-Down
Current
—CMOS Inputs
CE ≥ V
CC−0.2V,
VIN ≥ V
CC − 0.2V or
VIN ≤ 0.2V,
f = 0 VCC = 3.6V
55
110
55
110
µA
Capacitance[9]
Parameter Description Test Conditions Max. Unit
CIN Input Capacitance 8 pF
COUT Output Capacitance
TA = 25°C, f = 1 MHz
VCC = VCC(typ) 8 pF
Thermal Resistance[9]
Parameter Description Test Conditions BGA Unit
ΘJA Thermal Resistance(Junction to Ambient) 55 °C/W
ΘJC Thermal Resistance (Junction to Case)
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/ JESD51. 17 °C/W
Notes:
6.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.
7.VIL(MIN) = –0.5V for pulse durations less than 20 ns.
8.Overshoot and undershoot specifications are characterized and are not 100% tested.
9.Tested initially and after design or process changes that may affect these parameters.