SEMIKRON INC SEMIKRON ' Vrsm lFRMs (maximum values for continuous operation) , RRM 3A | 6,7A ' leav (sin. 180, Tret = 105 C, L = 10 mm) | Vv TOA 4,3A | 100 SK1G01 SK3G01 | 200 SK 1 G02 SK 3 G02 : 400 SK 1 G04 SK 3 G04 ; 600 SK 1 G06 SK 3 G06 800 SK 1 G08 SK 3 G08 ! 4000 SK1G10 SK 3G 10 1200 SK1G12* SK3G 12 Symbol] Conditions SK1G SK3G IFAV Tret = 130C;L= 10mm; sin. 180 13A 3A Tamb = 45 C; sin. 180; p.c.b. 50 x 50 mm 1,5A 2,1A IFSM Ty= 25C; 10 ms 58 A 200 A Ty = 175 C; 10 ms 50A 150A Pt Ty= 25C;8,3...10ms 16,8 As 200 A2s Ty = 175C; 8,3... 10ms 12,5 As 110 As Qe Ty = 150O; SF = 10-8; IF = 10 A; Vr = 100 V; typ. 15 uC 25 uC IR Ty= 25C; Vr = Varo 4ypA 4uA Tyj = 150 C; VR = VaRM 0,2 mA 0,25 mA Ve | Ty= 25C; (Ir =...); max 1,1 V (1A) 1,1.V(3A) Vito) =| Ty= 175C 0,85 V 0,85 V IT Ty = 175 C 75 mQ 30 mQ Cj Vr = 0; f = 1 MHz; typ. 45 pF 100 pF Va =4V; f= 1 MHz; typ. 20 pF Rinyr L=10mm 30 C/W 14 C/AV Rinja p.c.b. 50 x 50 mm 75 C/W 60 C/W Ty -40...4+175 Cj-40...+175C Tstg 55...4+ 175 Cj-55...4175C Tsolder | max. 10s,L=9mm 280 C 280 C a 5 - 9,81 m/s? 5- 9,81 m/s Ww approx. 05g ig Case E33 E29 * Available in limited quantities Rectifier Diodes SK1G PoO14S SK3G Features Axial lead diodes, taped Glass passivated silicon chip Void-free moulded plastic acc. to Underwriters Laboratory (UL) flammability classification 94 V-0 Polarity: Band denotes cathode terminal Peak inverse voltage up to 1200 V High surge current of 200 A Available with formed leads on request Typical Applications General purpose rectifier diodes for high quality requirement For printed circuit board mounting by SEMIKRON0.5 Tray %9 Tamb 50 100 150 c 200 Fig. 4 Rated forward current vs. ambient temperature 12 A- SK3G 10 2 ie 6 Vp 0,5 1 15 Vv 2 Fig. 6 b Forward characteristics 7 FAV i SK 1G SK 3G 0.7 1 ED 2 3 4 10 Fig. 9 Rated overload current vs. duty cycle \p 0 0 Ye 0.5 1 v 48 Fig. 6 a Forward characteristics 2.6 wUSK 1G 0s Peay % leay 0.6 i 15 A 2 Fig. 8 Power dissipation vs. forward current 20 30 40 50 % 100 B8- 14 ~~ by SEMIKRONSEMIKRON INC SEMIKRON 100 mn, 0.01 345 346 A 102 iFtov) tot 2 Fig. 10 Rated overload current vs. time 6 eS sK 5 1 Tray 0 OQ Tret 50 100 150 200 Fig. 14b Rated forward current vs. reference temp. 1000 pA SK3G 100 10 IR 1 oN 50 100 150 C 200 Fig. 15 b Reverse current vs. virt. junction temp. T-O1-15 leav 0 Oo Trat 50 100 sc 200 Fig. 14 a Rated forward current vs. reference temp. 150 1000 SK 1G pA 100 10 9 TW 400 cS 200 Fig. 15 a Reverse current vs. virtual junction temp. 50 150 60 SK 1G 6 W 50 40 ATT 30 Rinye 10 5 L 10 16 20 mm 25 Fig. 16 a Thermal resistance vs. lead length by SEMIKRON B8-1530 ~ OO ~ P.C.B. for Rinja = 60/75 C/W Ww 25 -- 50 = r- 25 | 20 ! | | 45 7 t= 4 + 8 Cu 7] m 35pm : s. | . Ng 2 of Rthic Glass fiber 0 reinforced = 5 L 10 5 20 25 = mm 30 epoxy resin wo] Fig. 16 b Thermal resistance vs. lead length . SK1G SK3G Case E 33 Case E 29 > wm +1 g 90,8 np 2428 6 L [. t } iv} * E 2 a r i oO pa So Ne ia & & [Le 8 Lb 1G) 3 Spo Ri Lt La 0,25 40205 qt | paso Le 9 }- 20x5 =10021 7 10x10*100 il 3 3500 diodes per reel 2000 diodes per reel Reel dimensions page B 8-2 Dimensions in mm B816 , _ by SEMIKRON