6367255 MOTOROLA SC (DIODES/OPTO) 4b pe uaezess 0078013 2 J T= m= SEMICONDUCTOR Sum) Soe Page 4-32 | TECHNICAL DATA 1N3154,A _ thru 1N3157,A TEMPERATURE-COMPENSATED SILICON ZENER REFERENCE DIODES TEMPERATURE. Temperature-compensated zener reference diodes utilizing an COMPENSATED oxide-passivated junction for long-term voitage stability. A rug- SILICON ZENER . ged, glass-enclosed, hermetically sealed structure. REFERENCE DIODES 8.4 V, 500 mW MAXIMUM RATINGS Junction Temperature: -55 to + 175C Storage Temperature: -65 to + 175C DC Power Dissipation: 500 mW @ Ta = 25C MECHANICAL CHARACTERISTICS CASE: Hermetically sealed, al! glass. {p78 DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion resistant and Jeads are readily solderable and weldabie. Dj | POLARITY: Cathodo indicated by polarity band. WEIGHT: 0.2 Grams (approx) K MOUNTING POSITION: Any A ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted ; | Vz = 84V +5.0%* @ lor = 10 mA) F , . K Maximum | Ambient Maximum mc | Voltage Test Temperature Dynamic JEDEC Change Tempesrature Coeffictant impedance MILLIMETERS] INCHES Type No. | AV2 (Volte) sc %lC 2z,(Ohma) DIM Min [MAX (Note 1) | (Note 2) 21C (Note 2) (Note 3) sea | 752 1N3164 0.130 | 0.01 2.16 | 2.72 1N3155 0.065. -55, 0, +25, +75, 0.005 18 . 56 1N3156 0.026 +100 0.002 1N3157 0.01 : 9.001 - : 1IN3154A 0.17: 0.01 All JEDEC dimensions and notes enply 1N3155A 0.08 -55, 0, +25, +75, 0.005 15 CASE 51-02 1N3156A 0.034 +100, +150 0.002 +204, IN31S7A 0.017 0.001 NOTES: GLASS 1, PACKAGE CONTOUR OPTIONAL WITHIN DIA B AND LENGTH A. HEAT SLUGS, IF ANY, SHALL BE INCLUDED Tighter-tolerance units available on special request. WITHIN THIS CYLINDER, BUT SHALL NOT BE SUBJECT TO CAPACITANCE (C) = 20 to 180 pF @ 90% of Vz THE MIN LIMIT OF DIAB. FORWARD BREAKDOWN VOLTAGE (V4) = 100 fo 800 V 2. LEAD DIA NOT CONTROLLED IN ZONES F,TG ALLOW FOR FLASH, LEAD FINISH BLIILOUP, AND MINOR IRREGULARITIES OTHER THAN HEAT SLUGS. 4-2968367255 MOTOROLA SC CDIODES/OPTO) Th de canvass oo78014 4 i 1N3154A thru 1N3157A 4V2, MAXIMUM VOLTAGE CHANGE (mV) (Raforanced toOC) 6V2, MAXIMUM VOLTAGE CHANGE (mV) (Referenced to-550C) & o , an o -100 ~150 TUM MAXIMUM VOLTAGE CHANGE versus AMBIENT TEMPERATURE with Iz7 = 10 mA 40.01 mA) (See Note 4) FIGURE 1a (2T= 10mA AV2 = 442.0 mV 1N3157 AVZ = 42.0 my I 1N3154 thru 1N3157 (50 1N3154 40 a 20 -40 \:50 -65 0 Ta, AMBIENT TEMPERATURE (C) FIGURE 1b 1N3155 1N3156 4N9157 1N3157 50 100 MAXIMUM VOLTAGE CHANGE versus AMBIENT TEMPERATURE (with 127 = 10 mA 0.01 mA) (See Note 4} FIGURE 2a INSISTA 1N3154A thru IN3167A (50 40 36 20 40 50 Soa 0. Ta, AMBIENT TEMPERATURE (C) 4-30 FIGURE 2b TN3155A IN3TSGA AN31S7A, INGTS6A AN3ISSA 50 100 150r 6367255 MOTOROLA SC (DIODES/oPTO) Ib DE W4367255 no7a015 -L I 1N3154A thru 1N3157A T-//-/! FIGURE 3 ZENER CURRENT versus MAXIMUM FIGURE 4 MAXIMUM ZENER IMPEDANCE VOLTAGE CHANGE (at specified temperatures) versus ZENER CURRENT won . (See Note 5) {See Note 3) MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES OF THE UNITS ARE IN THE RANGES 12 i" 100 8 ; a +2500 Vj ~+100%c = u b 3 2 N crsn0e 8 E 2 L la 5 wh-4~- 4+ a a | = = ex 10 ue * #15000 A . | N 59 5 a0 Z mala : a N 70 ! 1.0 -15 -60 -25 0 25 50 1.0 5.0 10 20 3040 Wz, MAXIMUM VOLTAGE CHANGE (mV} 12, ZENER CURRENT (mA) (Referanced to izzy 10 mAT FIGURE DISTRIBUTION OF MAXIMUM GENERATED NOISE _ =10 @ BANDWIDTH = 600 Hz > oS 2 a 2 = 2 = a ft = 100 fe CENTER FREQUENCY (kHz) NOTE 1: Curves showing the variation of zener impedance with zener current for each series are given in Figure 4. A cathode-ray tube curve-trace test on a sample basis is used to ensure that each zener characteristic Types 1N3154 thru 1N3157 are available to MIL-S-19500/158 and MEG-A-LIFE II, Levels 1, 2, & 3, specifications. NOTE 2: has a sharp and stable knea region. Voltage Variation {aVz) and Temperature Coefficient. NOTE 4: All raference diodes are characterized by the box method. This These graphs can be used to determine the maximum voltage change Guarantees 8 maximum voltage variation (aVz) over the specified of any device in the series over any specific temperature range. Far temperature range, at the specified test currant (lz7), verified by example, a temperature change from 0 to +50C will cause a voit- tests at indicated temperature points within the range. This method age change no greater than +42 mV or -42 mV for 1N3154, as of indicating voltage stability is now used for JEDEC registration as iustrated by the dashed lines in Figure 1. The boundaries given are well as for military qualification, The former mathed of indicating maximum values. For greater resolution, expanded views of the voltage stability by means of temperature coefficient accurately shaded areas in Figures 1a and 2a are shown in Figures 1b and 2b reflects the voltage deviation at the temperature extremes, but is not respectively. necessarily accurate within the temperature range because reference . diodes have a nonlinear temperature relationship. The temperature NOTE 5: coefficient, therefore, is given only as a reference. The maximum voltage change, aVz, in Figure 3 is due entirely to the impedance of the device. If both temperature and | 27 are varied, NOTE 3: then the total voltage change may be obtained by adding 4Vz in Zener impedance Derivation Figure 3 to the aVz in Figure 1 or-2 for the device under considera: The dynamic zener impedance, Z2T. is derived from the 60-Hz ac tion. !f the device is to be operated at some stable current other voltage drop which results when an ac current with an cms value than the specified test current, a new set of characteristics may be equal to 10% of the de zener current, (77, is superimposed on IzT. plotted by superimposing the data in Figure 3 on Figure 1 or 2.