1 - 2
© 2000 IXYS All rights reserved
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MW600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C40A
IC90 TC= 90°C20A
ICM TC= 25°C, 1 ms 8 0 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 22 W ICM = 40 A
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES
PCTC= 25 °C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque (M3) TO-247AD 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight TO-247AD 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 mA, VGE = 0 V 6 0 0 V
VGE(th) IC= 250 mA, VCE = VGE 2.5 5.5 V
ICES VCE = 0.8 • VCES TJ = 25°C 200 mA
VGE = 0 V TJ = 150°C3mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 1.7 2.0 V
HiPerFASTTM IGBT VCES = 600 V
with Diode IC25 = 40 A
VCE(sat)typ = 1.7 V
tfi(typ) = 100 ns
98566A (3/99)
IXGH 20N60BD1
IXGT 20N60BD1
C (TAB)
GCE
TO-247 AD
(IXGH)
TO-268
(IXGT)
GE
C (TAB)
Features
• International standard packages
• High frequency IGBT and antiparallel
FRED in one package
• High current handling capability
• HiPerFASTTM HDMOSTM process
• MOS Gate turn-on
-drive simplicity
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• Space savings (two devices in one
package)
• High power density
• Suitable for surface mounting
• Very low switching losses for high
frequency applications
• Easy to mount with 1 screw,TO-247
(insulated mounting screw hole)
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 9 1 7 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies 1500 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 1 50 p F
Cres 40 pF
Qg55 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 12 nC
Qgc 20 nC
td(on) 15 ns
tri 25 ns
td(off) 110 200 ns
tfi 100 150 ns
Eoff 0.7 1.0 mJ
td(on) 15 ns
tri 35 ns
Eon 0.75 mJ
td(off) 220 ns
tfi 140 ns
Eoff 1.2 mJ
RthJC 0.83 K/W
RthCK TO-247 0.25 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = 30A, VGE = 0 V, TJ = 150°C 1.6 V
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C 2.5 V
IRM IF = 30A, VGE = 0 V, -diF/dt = 100 A/ms6A
trr VR = 100 V TJ =100°C 100 ns
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C25 ns
RthJC 1.0 K/W
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
IXGH 20N60BD1
IXGT 20N60BD1
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
