RB471E
Diodes
Rev.B
1/3
Symbol Min. Typ. Max. Unit Conditions
V
F
1--0.55V
I
F
=100mA
V
F
2--0.34V
I
F
=10mA
everse current I
R
--30µA
V
R
=10V
Capacitance between termina ls Ct - - 6 pF V
R
=10V , f=1MHz
ward vol t age
Parameter
R
For
Schottky barrier diode
RB471E
zApplications
Low current rectification
zFeatures
1) Small mold type. (SMD5)
2) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
z Land size figure (Unit : mm)
z Structure
ROHM : SMD5
JEITA : SC-74A
week code
2.9±0.2
SMD5
0.35
0.8MIN.
1.0MIN.
0.45
0.35
1.9
0.95 0.95
0.45 0.6
2.4
1.9±0.2
1.6 ＋0.2
－0.1
0.95 0.95
各リードとも同寸法
0～0.1
(5) (3)
(1)
(4)
(2)
0.3～0.6
0.15±0.1
0.06
1.1±0.2
0.1
0.8±0.1
0.3
＋0.1
－0.05
Each le ad has s am e di m ens ion
z T aping specifications (Unit : mm)
zAbsolute maximum ratings (Ta=25°C)
zElectrical characteristics (Ta=25°C)
Symbol Unit
V
RM
V
V
R
V
Io A
I
FSM
A
Tj ℃
Tstg ℃
Parameter
Reverse voltage ( DC)
verage rectified forward cur rent (*1)
everse voltage (repetitive peak) Limits
40
0.1
40
ward current surge peak （60Hz・1cyc） (*1) 1
unction temperatur e
torage t emperature
*1) Rat ing of per diode
125
-40 t o +1 25
A
R
For
J
S
(
2.8±0.2
3.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
0
3.5±0.05
0±0.2
1.75±0.1
8.
φ1.0MIN
3.2±0.1
1.35±0.1
3.2±0.1
0.3±0.1
5.5±0.2
0～0.5
RB471E
Diodes
Rev.B
2/3
zElectrical characteristic curves (Ta=25°C)
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
trr DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
VF DISPERSION MAP
RESERVE RECOVERY TIME:trr(ns)
0.01
0.1
1
10
100
0 100 200 300 400 500 600 0.01
0.1
1
10
100
1000
10000
0 5 10 15 20 25 30 35
1
10
100
0102030
f=1MHz
420
430
440
450
460
470
AVE:439.5mV
Ta=25℃
IF=100mA
n=30pcs
260
270
280
290
300
310
AVE:281.5mV
Ta=25℃
IF=10mA
n=30pcs
0
5
10
15
20
25
30
Ta=25℃
VR=10V
n=10pcs
AVE:2.548uA
0
5
10
15
20
AVE:5.50A
0
5
10
15
20
25
30
AVE:6.20ns
0
5
10
15
0.1 1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
0.1 1 10 100
8.3ms
Ifsm 1cyc
1
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
Rth(j-a)
Rth(j-c)
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=125℃
Ta=25℃
Ta=75℃
8.3ms
Ifsm 1cyc
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
0
1
2
3
4
5
6
7
8
9
10
AVE:5.10pF
Ta=25℃
f=1MHz
VR=10V
n=10pcs
RB471E
Diodes
Rev.B
3/3
0
0.05
0.1
0.15
0.2
0.25
0.3
0 25 50 75 100 125
Per chip
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0
0.02
0.04
0.06
0.08
0.1
00.10.2
Per chip
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0102030
Per chip
0
0.05
0.1
0.15
0.2
0.25
0.3
0255075100125
Per chip
DC
D=1/2
Sin(θ＝180)
Sin(θ＝180)
DC
D=1/2
Sin(θ＝180)
DC
D=1/2
Sin(θ＝180)
DC
D=1/2
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
TTj=125℃
D=t/T
tVR
Io
VR=15V
0A
0V
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.