PIP3115-B,118 - NXP - Datasheet.Directory

Philips Semiconductors Product specification

Logic level TOPFET PIP3115-B

DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MAX. UNIT

overload protected logic level power

MOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 V

assembled in a 3 pin surface mount IDContinuous drain current 8 A

plastic package. PDTotal power dissipation 40 W

TjContinuous junction temperature 150 ˚C

APPLICATIONS RDS(ON) Drain-source on-state resistance 100 mΩ

General purpose switch for driving IISL Input supply current VIS = 5 V 650 µA

lamps

motors

solenoids

heaters

FEATURES FUNCTIONAL BLOCK DIAGRAM

TrenchMOS output stage

Current limiting

Overload protection

Overtemperature protection

Protection latched reset by input

5 V logic compatible input level

Control of output stage and

supply of overload protection

circuits derived from input

Low operating input current

permits direct drive by

micro-controller

ESD protection on all pins

Overvoltage clamping for turn

off of inductive loads

Fig.1. Elements of the TOPFET.

PINNING - SOT404 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 input

2 drain

3 source

mb drain

DRAIN

SOURCE

INPUT RIG

LOGIC AND

PROTECTION

O / V

CLAMP POWER

MOSFET

TOPFET

May 2001 1 Rev 1.000

Philips Semiconductors Product specification

Logic level TOPFET PIP3115-B

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDS Continuous drain source voltage1- - 50 V

IDContinuous drain current VIS = 5 V; Tmb = 25 ˚C - self - A

limited

IDContinuous drain current VIS = 5 V; Tmb ≤ 110 ˚C - 8 A

IIContinuous input current - -5 5 mA

IIRM Non-repetitive peak input current tp ≤ 1 ms -10 10 mA

PDTotal power dissipation Tmb ≤ 25 ˚C - 40 W

Tstg Storage temperature - -55 175 ˚C

TjContinuous junction temperature2normal operation - 150 ˚C

Tsold Case temperature during soldering - 260 ˚C

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCElectrostatic discharge capacitor Human body model; - 2 kV

voltage C = 250 pF; R = 1.5 kΩ

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Inductive load turn-off IDM = 8 A; VDD ≤ 20 V

EDSM Non-repetitive clamping energy Tmb ≤ 25 ˚C - 100 mJ

EDRM Repetitive clamping energy Tmb ≤ 95 ˚C; f = 250 Hz - 20 mJ

OVERLOAD PROTECTION LIMITING VALUE

With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload

- overtemperature and short circuit load.

SYMBOL PARAMETER REQUIRED CONDITION MIN. MAX. UNIT

VDS Drain source voltage34 V ≤ VIS ≤ 5.5 V 0 35 V

THERMAL CHARACTERISTIC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

Rth j-mb Junction to mounting base - - 2.5 3.1 K/W

Rth j-a Junction to ambient minimum footprint FR4 PCB - 50 - K/W

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.

2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.

3 All control logic and protection functions are disabled during conduction of the source drain diode.

May 2001 2 Rev 1.000

Philips Semiconductors Product specification

Logic level TOPFET PIP3115-B

OUTPUT CHARACTERISTICS

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Off-state VIS = 0 V

V(CL)DSS Drain-source clamping voltage ID = 10 mA 50 - - V

IDM = 1 A; tp ≤ 300 µs; δ ≤ 0.01 50 60 70 V

IDSS Drain source leakage current VDS = 40 V - - 100 µA

Tmb = 25 ˚C - 0.1 10 µA

On-state IDM = 3 A; tp ≤ 300 µs; δ ≤ 0.01

RDS(ON) Drain-source resistance VIS ≥ 4.4 V - - 190 mΩ

Tmb = 25 ˚C - 68 100 mΩ

VIS ≥ 4 V - - 200 mΩ

Tmb = 25 ˚C - 72 105 mΩ

OVERLOAD CHARACTERISTICS

-40˚C ≤ Tmb ≤ 150˚C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Short circuit load VDS = 13 V

IDDrain current limiting VIS = 5 V; Tmb = 25˚C 8 12 16 A

4.4 V ≤ VIS ≤ 5.5 V 6 - 18 A

4 V ≤ VIS ≤ 5.5 V 5 - 18 A

Overload protection VIS = 5 V; Tmb = 25˚C

PD(TO) Overload power threshold device trips if PD > PD(TO) 20 55 80 W

TDSC Characteristic time which determines trip time1200 350 600 µs

Overtemperature protection

Tj(TO) Threshold junction 150 170 - ˚C

temperature2

1 Trip time td sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO) ].

2 This is independent of the dV/dt of input voltage VIS.

May 2001 3 Rev 1.000

Philips Semiconductors Product specification

Logic level TOPFET PIP3115-B

INPUT CHARACTERISTICS

The supply for the logic and overload protection is taken from the input.

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VIS(TO) Input threshold voltage VDS = 5 V; ID = 1 mA 0.6 - 2.4 V

Tmb = 25˚C 1.1 1.6 2.1 V

IIS Input supply current normal operation; VIS = 5 V 100 220 400 µA

VIS = 4 V 80 195 330 µA

IISL Input supply current protection latched; VIS = 5 V 200 400 650 µA

VIS = 3 V 130 250 430 µA

VISR Protection reset voltage1reset time tr ≥ 100 µs 1.5 2 2.9 V

tlr Latch reset time VIS1 = 5 V, VIS2 < 1 V 10 40 100 µs

V(CL)IS Input clamping voltage II = 1.5 mA 5.5 - 8.5 V

RIG Input series resistance2Tmb = 25˚C - 33 - kΩ

to gate of power MOSFET

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C; VDD = 13 V; resistive load RL = 4 Ω. Refer to waveform figure and test circuit.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

td on Turn-on delay time VIS = 5 V - 8 20 µs

trRise time - 20 50 µs

td off Turn-off delay time VIS = 0 V - 25 70 µs

tfFall time - 16 40 µs

1 The input voltage below which the overload protection circuits will be reset.

2 Not directly measureable from device terminals.

May 2001 4 Rev 1.000

Philips Semiconductors Product specification

Logic level TOPFET PIP3115-B

MECHANICAL DATA

Fig.2. SOT404 surface mounting package1, centre pin connected to mounting base.

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

A1D1

max. EeL

pHDQc

2.54 2.60

2.20

15.40

14.80

2.90

2.10

11 1.60

1.20 10.30

9.70

4.50

4.10 1.40

1.27 0.85

0.60 0.64

0.46

DIMENSIONS (mm are the original dimensions)

SOT404

0 2.5 5 mm

scale

Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads

(one lead cropped) SOT404

e e

mounting

base

98-12-14

99-06-25

1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.4 g

For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.

May 2001 5 Rev 1.000

Philips Semiconductors Product specification

Logic level TOPFET PIP3115-B

DEFINITIONS

DATA SHEET STATUS

DATA SHEET PRODUCT DEFINITIONS

STATUS1STATUS2

Objective data Development This data sheet contains data from the objective specification for

product development. Philips Semiconductors reserves the right to

change the specification in any manner without notice

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the specification without

notice, in ordere to improve the design and supply the best possible

product

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in

order to improve the design, manufacturing and supply. Changes will

be communicated according to the Customer Product/Process

Change Notification (CPCN) procedure SNW-SQ-650A

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

1 Please consult the most recently issued datasheet before initiating or completing a design.

2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is

available on the Internet at URL http://www.semiconductors.philips.com.

May 2001 6 Rev 1.000