Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS 20V
▼ Simple Gate Drive RDS(ON) 600mΩ
▼ Small Package Outline ID600mA
Description
Absolute Maximum Ratings
Symbol Unit
VDS V
VGS V
ID@TA=25℃mA
ID@TA=70℃mA
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3
360 ℃/W
Data and specifications subject to change without notice
AP1332GEU
Parameter Rating
RoHS-compliant Product
Drain-Source Voltage 20
Gate-Source Voltage ±8
Continuous Drain Current3600
Continuous Drain Current3470
Pulsed Drain Current12.5
Total Power Dissipation 0.35
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.003
Storage Temperature Range
Thermal Data Parameter
201019073-1/4
D
G
S
SOT-323
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=4.5V, ID=600mA - - 600 mΩ
VGS=2.5V, ID=400mA - - 1000 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.25 V
gfs Forward Transconductance VDS=5V, ID=600mA - 1 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=±8V - - ±30 uA
QgTotal Gate Charge2ID=600mA - 1.3 2 nC
Qgs Gate-Source Charge VDS=16V - 0.3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 0.5 - nC
td(on) Turn-on Delay Time2VDS=10V - 21 - ns
trRise Time ID=600mA - 53 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 100 - ns
tfFall Time RD=16.7Ω- 125 - ns
Ciss Input Capacitance VGS=0V - 38 60 pF
Coss Output Capacitance VDS=10V - 17 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 12 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSD Forward On Voltage2IS=300mA, VGS=0V - - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.Surface mounted on FR4 board, t ≦ 10 sec.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
AP1332GEU
2/4
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP1332GEU
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.5 1.0 1.5 2.0 2.5
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC5.0V
4.5V
3.5V
2.5V
VG=2.0V
0.0
0.5
1.0
1.5
2.0
2.5
0.0 0.5 1.0 1.5 2.0 2.5
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC5.0V
4.5V
3.5V
2.5V
VG=2.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=0.6A
VG=4.5V
0.0
0.5
1.0
1.5
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0.0
0.2
0.4
0.6
0.8
1.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
200
400
600
800
1000
2345
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=0.4A
TA=25oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
AP1332GEU
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
12
0.0 0.5 1.0 1.5 2.0 2.5 3.0
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=0.6A
VDS =10V
VDS =12V
VDS =16V
10
100
1357911
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
Package Outline : SOT-323
Millimeters
SYMBOLS MIN NOM MAX
A 0.80 0.90 1.00
A1 0.00 0.05 0.10
A2 0.15
D1 0.25 0.33 0.40
e0.65
D 1.80 2.00 2.20
E 1.80 2.10 2.40
E1 1.15 1.25 1.35
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SOT-323
ADVANCED POWER ELECTRONICS CORP.
2XX
Part Number
A
A1 A2
Date Code
D
E1 E
e
e
D1
