DATE CHECKED Dec.-10- '04 CHECKED NAME O. Ikawa K. Yamada APPROVED D R A W N Dec.-10- '04 K. Komatsu Y. Seki http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. SPECIFICATION Device Name : Power Integrated Module Type Name : 7MBR15UF060 Spec. No. : MS6M00814 . n g si e d new or f d n e m m o rec No t Fuji Electric Device Technology Co.,Ltd. MS6M00814 1/ 16 H04-004-07b Date Classification Ind. Content Dec.-10-'04 Enactment Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Revised Records Applied date Issued date Drawn Checked Checked Approved O. Ikawa K. Yamada MS6M00814 Y. Seki . n g si e d new or f d n e m m o rec No t 2/ 16 H04-004-03a H04-004-06b 2. Equivalent circuit Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 7MBR15UF060 Specification 1. Outline Drawing ( Unit : mm ) . n g si e d new or f d n e Module only designed for mounting on PCB with 1.70.3mm thickness m m o rec No t MS6M00814 3/ 16 H04-004-03a 4. Drilling layout for PCB Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 3. Pin positions with tolerance ( Unit : mm ) . n g si m m o rec or f d n e e d new No t Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product. MS6M00814 4/ 16 H04-004-03a 5. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified) Items Symbols Collector-Emitter voltage VCES Gate-Emitter voltage VGES Inverter Ic Collector current Collector Power Dissipation 1ms -Ic Continuous Pc 1 device Tc=60 15 Tc=25oC 18 V V A Tc=60 30 Tc=25oC 36 Tc=60 15 A 63 W A VCES 600 V Gate-Emitter voltage VGES 20 V Brake Ic Continuous Tc=80 o Icp 1ms 14 Tc=80 20 Tc=25 C Collector Power Dissipation Pc Average Output Current Io Surge Current (Non-Repetitive) 2 It (Non-Repetitive) 1 device 50Hz/60Hz sine wave between terminal and baseplate(*1) voltage between thermistor and others (*2) 56 W 20 A 210 A 2 half sine wave 221 A2s . n g si Tstg Isolation A 28 Tj=150oC,10ms Tj Storage temperature A IFSM It Junction temperature 10 Tc=25 C o Converter Units Collector-Emitter voltage Collector current Viso ne AC : 1min. e d w Mounting Screw Torque M4 (*1) All terminals should be connected together when isolation test will be done. or f d n e 150 o -40~ +125 o C 2500 C V 2500 V 1.31.7 N.m (*2) Terminal T1 and T2 should be connected together. And another terminals should be connected together and shorted to baseplate. m m o rec t No Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 20 Continuous Icp Maximum Ratings 600 Conditions MS6M00814 5/ 16 H04-004-03a 6. Electrical characteristics ( at Tj= 25oC unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols saturation voltage VGE = 0 V, VCE = 600 V - - 1.0 mA IGES VCE = 0 V, VGE = 20 V - - 200 nA VGE(th) VCE = 4.5 6.0 7.5 V 20 V, Ic = Inverter Input capacitance Cies VGE = f= Turn-on time ton Vcc= 8 mA Tj=25 (Chip) - 2.10 2.60 15 V Tj=125 - 2.50 3.00 15 A Tj=25 Tj=125 - 2.00 2.50 - 2.40 2.90 - 900 - 300 V - 0.43 1.20 0.60 0 V, VCE = 1 MHz 10 V tr Ic = 15 A - 0.18 tr(i) VGE = 15 V - 0.03 - Turn-off time toff RG = 270 - 0.40 1.00 Forward on voltage VF (Terminal) VF IF = 15A (Chip) t No - 1.95 2.60 Tj=25 - 1.75 2.40 Tj=125 - 1.85 2.50 - - 300 s V ns . n g si 0 V, VCE = 600 V - - 1.0 mA IGES VCE = 0 V, VGE = 20 V - - 200 nA VGE(th) VCE = 4.5 6.0 7.5 V 20 V, Ic = 4 mA e d new Tj=25 VCE(sat) (Terminal) VGE = VCE(sat) Ic = - 2.45 3.00 15 V Tj=125 - 2.95 3.45 10 A Tj=25 - 2.40 2.95 - 2.90 3.40 - 600 - 300 V - 0.60 1.20 Tj=125 Cies VGE = f= ton Vcc= 0 V, VCE = 1 MHz 10 V V pF s tr Ic = 10 A - 0.30 0.60 toff VGE = 15 V - 0.45 1.00 tf RG = - 0.05 0.35 - - 350 ns - - 1.00 mA chip - 1.1 - terminal - 1.2 1.5 - - 1.0 T = 25 C 4750 5000 5250 T =100oC - 495 - 3305 3375 3450 trr IF = Reverse current IRRM VR = 600 V Forward on voltage VFM IF = 20A Reverse recovery time B value 2.50 15 A 510 10 A Resistance 0.35 1.85 pF VGE = m m o rec Reverse current 0.05 - V ICES (Chip) Input capacitance Turn-off time IF = IRRM R B VR = 800 V o T = 25/50oC Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. Brake trr Tj=25 Tj=125 or f d n e saturation voltage Turn-on time Thermistor Converter This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. tf Reverse recovery time Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter Units ICES VCE(sat) (Terminal) VGE = VCE(sat) Ic = Collector-Emitter Characteristics min. typ. Max. Conditions MS6M00814 V mA K 6/ 16 H04-004-03a 7. Thermal resistance characteristics Items Symbols Thermal resistance (1 device) Rth(j-c) Contact Thermal resistance Rth(c-f) Characteristics min. typ. Max. Conditions Inverter IGBT - - 1.99 Inverter FWD - - 2.04 Brake IGBT - - 2.25 Brake diode - - 2.04 Converter Diode - - 1.56 with Thermal Compound (*) - 0.50 - Units o C/W o C/W * This is the value which is defined mounting on the additional cooling fin with thermal compound. 8. Indication on module Serial No. 7MBR15UF060 15A 600V U. K. 9. Applicable category This specification is applied to Power Integrated Module named 7MBR15UF060. 10. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . . n g si Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. e d new or f d n e Avoid excessive external force on the module. Store modules with unprocessed terminals. m m o rec Do not drop or otherwise shock the modules when transporting. t No 11. Definitions of switching time 0V V GE L trr Irr VCE Ic 90% 10% 10% 0V 0A V CE Ic 90% Vcc RG 90% 0V 10% VCE tr(i) V GE tr Ic tf toff ton 12. Packing and Labeling Display on the packing box Logo of production Type name Lot. No. Products quantitiy in a packing box Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Lot. No. MS6M00814 7/ 16 H04-004-03a Reliability Test Items Test categories Test items (Aug.-2001 edition) Mechanical Tests 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration Environment Tests 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Temperature Cycle Pull force Test time Screw torque Test time : : : : 10N 101 sec. 1.3 ~ 1.7 Nm (M4) 101 sec. : Number of cycles (0:1) 5 (0:1) 5 (0:1) Test Method 201 5 (0:1) Test Method 202 5 (0:1) Test Method 103 5 (0:1) 5 (0:1) 5 (0:1) method Test Method 403 Reference 1 Condition code B Test Method 404 Condition code D Test code C Low temp. -405 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : . n g si e d new or f d n e Test temp. High temp. 100 +0 -5 +5 -0 Test Method 307 method Condition code A Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles m m o rec t 5 Test Method 402 Test Method 105 Test temp. Dwell time No (0:1) Method High temp. 125 5 5 Thermal Shock 5 Test Method 401 Range of frequency : 0.1 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s 2 Sweeping direction : Each X,Y,Z axis Test time : 3 hr. (1hr./direction) Maximum acceleration : 9800m/s 2 Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Reference AcceptNumber norms ance EIAJ ED-4701 of sample number Test methods and conditions MS6M00814 8/ 16 H04-004-03a Reliability Test Items Test categories Test items 1 High temperature Reverse Bias Endurance Tests Test duration 2 High temperature Bias (for gate) : Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : 2 sec. : 18 sec. : Tj=1005 deg Tj 150 , Ta=255 : 8500 cycles Test temp. Bias Voltage Bias Method Test duration ON time OFF time Test temp. 3 Intermitted Operating Life (Power cycle) ( for IGBT ) Number of cycles Symbol ICES IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual inspection Peeling Plating and the others t Visual inspection Test Method 101 5 (0:1) Test Method 106 5 P<1% for Failure criteria Unit Lower limit Upper limit m m o rec No (0:1) e d new d n e Characteristic Electrical Leakage current characteristic 5 . n g si Failure Criteria Item Test Method 101 : Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test temp. Bias Voltage Bias Method - USLx2 USLx2 mA A LSLx0.8 - USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA V V mV - USLx1.2 mV Broken insulation - The visual sample - Note LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Reference AcceptNumber norms ance EIAJ ED-4701 of sample number (Aug.-2001 edition) Test methods and conditions MS6M00814 9/ 16 H04-004-03a Reliability Test Results Test categories Reference norms EIAJ ED-4701 Test items (Aug.-2001 edition) Test Method 401 Mechanical Tests 1 Terminal Strength 5 0 5 0 5 0 5 0 Method (Pull test) Test Method 402 2 Mounting Strength method 3 Vibration Test Method 403 Condition code B Test Method 404 4 Shock Environment Tests Condition code B 1 High Temperature Storage Test Method 201 5 0 2 Low Temperature Storage Test Method 202 5 0 3 Temperature Humidity Test Method 103 . n g si 5 0 Test Method 105 5 0 Test Method 307 5 0 Test Method 101 5 0 Test Method 101 5 0 Test Method 106 5 0 Test code C Storage 4 Temperature Cycle 5 Thermal Shock e d new or f d n e method Condition code A o c e r mm 1 High temperature Reverse Bias t gate ) ( for N3 oIntermitted Operating Life 2 High temperature Bias (Power cycling) ( for IGBT ) Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. Endurance Tests This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Number Number of test of failure sample sample MS6M00814 10 / 16 H04-004-03a [ Inverter ] Collector current vs. Collector-Emitter voltage [ Inverter ] Collector current vs. Collector-Emitter voltage o Tj= 125oC (typ.) / chip Tj= 25 C (typ.) / chip 40 40 VGE=20V 15V 13V Collector current : Ic [ A ] Collector current : Ic [ A ] 30 20 9V 10 13V 11V 20 9V 10 0 0 0 1 2 3 4 5 0 1 Collector - Emitter voltage : VCE [ V ] 3 4 5 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25oC (typ.) / chip 10 Collector - Emitter voltage : VCE [ V ] 40 Tj=125 oC Tj=25 oC 30 Collector current : Ic [ A ] 2 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) / chip 20 8 . n g si 6 e d new 10 0 4 or f d n e Ic=30A 2 15A 7.5A 0 o c e r 0 1 2 3 4 mm 5 8 10 Collector - Emitter voltage : VCE [ V ] ot 12 14 16 18 [ Inverter ] Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25 oC Vcc=300V, Ic=8A, Tj= 25 oC 1000 Coes 22 500 25 400 20 300 15 200 10 100 5 Cres 0 0 5 10 15 20 25 30 http://store.iiic.cc/ 10 20 30 40 50 60 70 Gate charge : Qg [ nC ] DWG.NO. Collector - Emitter voltage : VCE [ V ] Fuji Electric Device Technology Co.,Ltd. 0 0 35 MS6M00814 11 / 16 H04-004-03a Gate - Emitter voltage : VGE [ V ] 100 Collector - Emitter voltage : VCE [ V ] Cies 20 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) N Capacitance : Cies, Coes, Cres [ pF ] This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 15V VGE=20V 11V 30 [ Inverter ] Switching time vs. Collector current (typ.) [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=270 , Tj= 125oC o Vcc=300V, VGE=+-15V, Rg=270, Tj= 25 C 1000 1000 ton tr ton Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] tr toff 100 tf toff 100 tf 10 10 5 10 15 20 25 30 35 5 10 15 25 30 35 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=270 Vcc=300V, Ic=15A, VGE=+-15V, Tj= 25 oC toff ton Switching time : ton, tr, toff, tf [ nsec ] 1000 tr tf 100 en o c e r Gate resistance : Rg [ ] ot 3 . n g si 2 Eon 25 1000 mm Eoff 125 1 or f d Eoff 25 Err 125 Err 25 0 0 10 20 30 40 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) [ Inverter ] Reverse bias safe operating area Vcc=300V, Ic=15A, VGE=+-15V, Tj= 125 oC +VGE=15V, -VGE<=15V, Rg=>270, Tj<=125oC N 1.2 Eon 125 e d new 100 10 Switching loss : Eon, Eoff, Err [ mJ / pulse ] 4 60 Eon 50 1 Eoff Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ / pulse ] 0.8 0.6 0.4 40 30 20 10 Err 0.2 100 0 1000 0 Gate resistance : Rg [ ] 200 400 600 800 Collector - Emitter voltage : VCE [ V ] Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Collector current : Ic [ A ] 20 MS6M00814 12 / 16 H04-004-03a [ Inverter ] Forward current vs. Forward on voltage (typ.) chip [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=+-15V, Rg=270 40 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Tj=25 oC Tj=125 oC Forward current : IF [ A ] 30 20 10 trr 125 100 trr 25 Irr 25 10 Irr 125 0 0 1 2 3 4 5 5 10 15 25 30 35 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) / chip 50 Forward current : IF [ A ] 40 Tj=25 oC Tj=125 oC . n g si 30 e d new 20 10 0 0 or f d n e m m o rec 0.4 0.8 1.2 1.6 2 Forward on voltage : VFM [ V ] t No [ Thermistor ] Temperature characteristic (typ.) Thermal resistance (max.) 10 IGBT [Brake] FWD [inverter,Brake] IGBT [inverter] CONV.Diode 1 Resistance : R [ ] 100 Thermal resistanse : Rth(j-c) [ oC / W ] 10 1 0.1 0.001 0.01 0.1 1 10 0.1 -50 0 50 100 150 200 o Pulse width : Pw [ sec ] Temperature [ C ] Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Forward on voltage : VF [ V ] 20 MS6M00814 13 / 16 H04-004-03a [ Brake] Collector current vs. Collector-Emitter voltage [ Brake ] Collector current vs. Collector-Emitter voltage o Tj= 125oC(typ.) / chip Tj= 25 C(typ.) / chip 25 25 VGE=20V 15V 13V VGE=20V 20 15V Collector current : Ic [ A ] Collector current : Ic [ A ] 20 15 11V 10 11V 10 9V 5 13V 15 9V 5 0 0 0 1 2 3 4 5 0 1 4 5 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25oC (typ.) / chip 25 10 Collector - Emitter voltage : VCE [ V ] Tj=25 oC 20 Tj=125 oC Collector current : Ic [ A ] 3 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) / chip 15 8 . n g si 6 e d new 10 d n e 5 0 o c e r 0 1 2 3 4 5 mm 6 4 ot Ic=20A 10A 2 for 5A 0 5 10 Collector - Emitter voltage : VCE [ V ] 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) [ Brake ] Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25 oC Vcc=300V, Ic=4A, Tj= 25 oC N 500 25 400 20 300 15 200 10 100 5 Cies 100 Coes Cres 0 10 0 5 10 15 20 25 30 http://store.iiic.cc/ 5 10 15 20 25 30 35 Gate charge : Qg [ nC ] DWG.NO. Collector - Emitter voltage : VCE [ V ] Fuji Electric Device Technology Co.,Ltd. 0 0 35 MS6M00814 14 / 16 H04-004-03a Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] 1000 Capacitance : Cies, Coes, Cres [ nF ] This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Collector - Emitter voltage : VCE [ V ] 2 Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - When electric power is connected to equipments, rush current will be flown through rectifying diode to charge DC capacitor. Guaranteed value of the rush current is specified as I 2t (non-repetitive), however frequent rush current through the diode might make it's power cycle destruction occur because of the repetitive power. In application which has such frequent rush current, well consideration to product life time (i.e. suppressing the rush current) is necessary. I2t()I2t - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Power cycle capability is classified to delta-Tj mode and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. TjTc(Tc) . n g si e d new Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product. Mounting Instructions (No. MT5F14628a) or f d n e - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. m m o rec - Use this product with keeping the cooling fin's flatness between screw holes within 50um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm50um10um t No - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. MS6M00814 15 / 16 H04-004-03a - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - Control the surge voltage by adding a protection circuit (=snubber circuit) to the IGBT. Use a film capacitor in the snubber circuit, and then set it near the IGBT in order to bipass high frequency surge currents. IGBT(=) IGBT . n g si Cautions - Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. e d new or f d n e m m o rec - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. t No - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd. Fuji Electric Device Technology Co.,Ltd. http://store.iiic.cc/ DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE MS6M00814 16 / 16 H04-004-03a