D A T E N A M E
APPROVED
DWG.NO.
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
H 0 4 - 0 0 4 - 0 7 b
7MBR15UF060
MS6M00814
1/16
Power Integrated Module
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any w ay wh atsoever fo r the use of any t h ird part y n o r used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
MS6M00814
DRAWN
CHECKED
CHECKED
K. Komatsu
O . Ikawa
K. Yamada
Y . S e k i
D e c . - 1 0 - ' 0 4
D e c . - 1 0 - ' 0 4
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
2/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
D a t e C l a s s i -
f i c a t i o n I n d . C o n t e n t Applied
date D r a w n C h e c k e d C h e c k e d A p p r o ve d
Enactment I s s u e d
date
Revised Records
H 0 4 - 0 0 4 - 0 6 b
D e c . - 1 0 - ' 0 4
O . Ikawa
K. Yamada
Y . S e k i
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
3/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
7MBR15UF060 Specification
2. Equivalent circuit
1. Outline Drawing ( Unit : mm )
Module only designed for mounting on PCB with 1.7±
0.3mm thickness
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Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
4/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
3. Pin positions with tolerance ( Unit : mm )
4. Drilling layout for PCB
P l e a s e refer to m o u n t i n g instructions ( Techni cal R e p . No. :MT5F14628a) w h e n you mount this p r o d u c t .
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Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
5/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
5 . Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified)
I t e m s Symbols C o n d i t i o n s Maximum
R a t i n g s U n i t s
C o l l e c t o r - E m i t t e r vo l t a g e VCES 600 V
Gat e-Emi t t er volt age VG E S ±20 V
I c C o n t i n u o u s T c = 6 0 ℃1 5
T c = 2 5 oC 1 8
C o l l e c t o r c u r r e n t I c p 1 m s T c = 6 0 ℃3 0
T c = 2 5 oC 3 6
- I c C o n t i n u o u s T c = 6 0 ℃1 5 A
C o l l e c t o r P o w e r D i s s i p a t i o n Pc 1 device 6 3 W
C o l l e c t o r - E m i t t e r vo l t a g e VCES 600 V
Gat e-Emi t t er volt age VG E S ±20 V
I c C o n t i n u o u s T c = 8 0 ℃1 0
T c = 2 5 oC 1 4
C o l l e c t o r c u r r e n t I c p 1 m s T c = 8 0 ℃2 0
T c = 2 5 oC 2 8
C o l l e c t o r P o w e r D i s s i p a t i o n Pc 1 device 5 6 W
Average Output Current I o 5 0 Hz / 6 0 H z
sine wave 2 0 A
Surge Current (Non-Repetitive) I FS M T j = 1 5 0 oC , 1 0 m s 210 A
I 2t (Non-Repet it ive) I 2t h a l f s i n e w a ve 2 2 1 A2s
J u n c t i o n t e m p e r a t u r e T j 150 oC
Storage temperature T s t g - 4 0 ~ + 1 2 5 oC
I s o l a t i o n b e t w e e n t e r m i n a l a n d b a s e p l a t e (*1) Viso AC : 1min. 2 5 0 0 V
v o l t a g e b e t w e e n t h e r m i s t o r a n d o t h e r s (*2) 2 5 0 0 V
Mounting Screw Torque M4 1 . 3 ～ 1 . 7 N . m
(* 1) Al l t erm i na l s s h oul d be c onnec ted t oget her when is ol at i on t es t will be done.
(* 2) Termi nal T1 and T2 s houl d be con nec t ed t oget her. A nd anot her t erminal s
should be connected together and shorted to baseplate.
A
A
A
A
InverterConverter Brake
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
6/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
6 . Electrical characteristics ( at Tj= 25
oC unless otherwise specified) C h a r a c t e r i s t i c s
I t e m s Symbols Condi t i o ns min. typ. Max. Units
Z e r o g a t e v o l t a g e
C o l l e c t o r c u r r e n t I CES V
G E = 0 V, VCE
=
6 0 0 V - - 1 . 0 m A
Gate-Emitter leakage current I G E S V
CE = 0 V, VGE
=
±20 V - - 200 n A
Gate-Emitter
threshold voltage VG E ( t h ) V
CE = 20 V, Ic = 8 mA 4 . 5 6.0 7. 5 V
V
CE(sat) T j = 2 5 ℃- 2.10 2 . 6 0
C o l l e c t o r - E m i t t e r (Terminal) V
G E = 15 V Tj=125℃- 2.50 3 . 0 0
saturation voltage V
CE(sat) I c = 15 A Tj=25℃- 2.00 2 . 5 0
(Chip) T j = 1 2 5 ℃- 2.40 2 . 9 0
I n p u t c a p a c i t a n c e C i e s V
G E = 0 V, VCE
=
10 V - 9 0 0 -
f = 1 MHz
T u r n - o n t i m e ton Vcc= 300 V - 0.43 1 . 2 0
tr I c = 15 A - 0.18 0 . 6 0
tr(i) V
G E = ±15 V - 0.03 - s
T u r n - o f f t i m e toff RG = 270 - 0.40 1 . 0 0
tf - 0.05 0 . 3 5
Forward on voltage VF T j = 2 5 ℃- 1.85 2 . 5 0
(Terminal) T j = 1 2 5 ℃- 1.95 2 . 6 0
VF T j = 2 5 ℃- 1.75 2 . 4 0
(Chip) T j = 1 2 5 ℃- 1.85 2 . 5 0
R e v e r s e r e c o v e r y t i m e trr I F = 15 A - - 300 ns
Z e r o g a t e v o l t a g e
C o l l e c t o r c u r r e n t I CES V
G E = 0 V, VCE
=
6 0 0 V - - 1 . 0 m A
Gate-Emitter leakage current I G E S V
CE = 0 V, VGE
=
±20 V - - 200 n A
Gate-Emitter
threshold voltage VG E ( t h ) V
CE = 20 V, Ic = 4 mA 4 . 5 6.0 7. 5 V
C o l l e c t o r - E m i t t e r V
CE(sat) T j = 2 5 ℃- 2.45 3 . 0 0
(Terminal) V
G E = 15 V Tj=125℃- 2.95 3 . 4 5
V
CE(sat) I c = 10 A Tj=25℃- 2.40 2 . 9 5
saturation voltage (Chip) T j = 1 2 5 ℃- 2.90 3 . 4 0
I n p u t c a p a c i t a n c e C i e s V
G E = 0 V, VCE
=
10 V - 6 0 0 -
f = 1 MHz
T u r n - o n t i m e ton Vcc= 300 V - 0.60 1 . 2 0
tr I c = 10 A - 0.30 0 . 6 0 s
T u r n - o f f t i m e toff V
G E = ±15 V - 0.45 1 . 0 0
tf R G = 510 - 0.05 0 . 3 5
R e v e r s e r e c o v e r y t i m e trr I F = 10 A - - 350 ns
R e v e r s e c u r r e n t I RRM V
R = 600 V - - 1 . 0 0 m A
Forward on voltage V
F M chip - 1.1 -
terminal - 1.2 1 . 5
R e v e r s e c u r r e n t I RRM V
R = 800 V - - 1 . 0 m A
R e s i s t a n c e R T = 25oC 4 7 5 0 5 00 0 5 25 0
T =100oC - 4 9 5 -
B value B T = 25/50oC 3 3 0 5 3 37 5 3450 K
p F
V
Ω
I F = 15A
I F = 2 0 A
V
p F
V
V
Inverter
ConverterThermistor Brake
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
7/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
U. K.
□□□□□
7MBR15UF060
Lot.N o .
15A 600V
□
□
□
SerialN o .
8. Indication on module
1 1 . D e f i n i t i o n s o f s w i t c h i n g t i m e
L
Vcc
Ic
V
CE
R
G
V
GE
V
GE
VCE
Ic
0V
0A
0V
10%
90%
10% 10%
90%
90%
0V
Ic
VCE
～
～
～
～
～
～
on
t
r
t
r(i)
t
off
t
f
t
rr
I
rr
t
9 . A p p l i c a b l e c a t e g o r y
T h i s s p e c i f i c a t i o n i s a p p l i e d t o P o w e r I n t e g r a t e d M o d u l e n a m e d 7 M B R 1 5 U F 0 6 0 .
1 0 . S t o r a g e a n d t r a n s p o r t a t i o n n o t e s
・T h e m o d u l e s h o u l d b e s t o r e d a t a s t a n d a r d t e m p e r a t u r e o f 5 t o 3 5 oC and
h um i d i t y o f 4 5 t o 75 % .
・Store modules in a place with few temperature changes in order to avoid
condensation on the module surface.
・Avoid exposure to corrosive gases and dust.
・Avoid excessive external force on the module.
・Store modules with unprocessed terminals.
・D o n o t d r o p o r o t h e r w i s e s h o c k t h e m o d u l e s w h e n t r a n s p o r t i n g .
12. Packing and Labeling
D i s p l a y o n t h e p a c k i n g b o x
‐
Lo go of pr o du c t i o n
‐
T y p e n a m e
‐
Lo t . N o .
‐
Products quantitiy in a packing box
7. Thermal resistance characteristics C h a r a c t e r i s t i c s
I t e m s Symbols C o n d i t i o n s min. typ. Max . Units
I n v e r t e r I G B T - - 1.99
T h e r m a l r e s i s t a n c e I n v e r t e r F W D - - 2.04
( 1 d e vi c e ) R th(j-c) Brake IGBT - - 2.25 oC / W
Brake diode - - 2.04
C o n v e r t e r D i o d e - - 1.56
Co n t a c t Th e rm a l re s i s t a n c e R th(c-f) w i t h T h e r m a l C o m p o u n d (*) - 0.50 - oC / W
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
8/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
Rel i abi lity Test Items
Test
cate-
go r ie s Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
of sample
A c c e p t -
anc e
num b e r
1 Terminal Strength Pull force : 10N T e s t M e t h o d 4 0 1 5 ( 0 : 1 )
(Pull test) Test time : 10±1 sec. MethodⅠ
2 Mounting Strength Screw torque : 1.3 ~ 1.7 N･
m (M4) T e s t M e t h o d 4 0 2 5 ( 0 : 1 )
Test time : 10±1 sec. methodⅡ
3 Vibration Range of frequency : 0.1 ~ 500Hz T e s t M e t h o d 4 0 3 5 ( 0 : 1 )
Sweeping time : 15 min. Reference 1
A c c e l e r a t i o n :
100m/s
2 Condition code B
Sweeping direction : Each X,Y,Z axis
Test time : 3 hr. (1hr./direction)
4 Shock M a x i m u m a c c e l e r a t i o n :
9800m/s
2 T e s t M e t h o d 4 0 4 5 ( 0 : 1 )
Pulse width : 0.5msec. Condition c ode D
Direction : Each X,Y,Z axis
Test time : 3 times/direction
1 High Temperature Storage temp. : 125±5 ℃T e s t M e t h o d 2 0 1 5 ( 0 : 1 )
Storage Test duration : 1000hr.
2 Low Temperature Storage temp. : -40±5 ℃T e s t M e t h o d 2 0 2 5 ( 0 : 1 )
Storage Test duration : 1000hr.
3 Temperature Storage temp. : 85±2 ℃T e s t M e t h o d 1 0 3 5 ( 0 : 1 )
H u m i d i t y Relative humidity : 85±5% T e s t c o d e C
Storage Test duration : 1000hr.
4 Temperature T e s t M e t h o d 1 0 5 5 ( 0 : 1 )
Cycle Test temp. : Lo w t em p. -4 0±5 ℃
H i g h t e m p . 1 2 5 ±5 ℃
RT 5 ~ 35 ℃
Dwell time : High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
N u m b e r o f c y c l e s : 100 cycles
5 Thermal Shock +0 T e s t M e t h o d 3 0 7 5 ( 0 : 1 )
Test temp. : H i g h t e m p . 1 0 0
-5
℃method Ⅰ
+ 5 Condition c ode A
Low temp. 0
-0
℃
U s e d l i q u i d : W a t e r w i t h i c e a n d b o i l i n g w a t e r
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
N u m b e r o f c y c l e s : 10 cycles
Mechanical TestsEnvironment Tests
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
9/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Note
Lower limit Upper limit
Electrical Leakage current ICES - USL×2 mA
characteristic ±IGES - USL×2 A
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage VCE(sat) - USL×1.2 V
Forward voltage VF - USL×1.2 V
Thermal IGBT VGE - USL×1.2 mV
resistance or VCE
FWD VF - USL×1.2 mV
Isolation voltage Viso Broken insulation -
Visual Visual inspection
inspection Peeling - The visual sample -
Plating
and the others LSL : Lower specified limit.
USL : Upper specified limit.
Note : EEEaaaccchhh pppaaarrraaammmeeettteeerrr mmmeeeaaasssuuurrreeemmmeeennnttt rrreeeaaaddd---ooouuutttsss ssshhhaaallllll bbbeee mmmaaadddeee aaafffttteeerrr ssstttaaabbbiiillliiizzziiinnnggg ttthhheee cccooommmpppooonnneeennntttsss
aaattt rrroooooommm aaammmbbbiiieeennnttt fffooorrr 222 hhhooouuurrrsss mmmiiinnniiimmmuuummm,,, 222444 hhhooouuurrrsss mmmaaaxxxiiimmmuuummm aaafffttteeerrr rrreeemmmooovvvaaalll fffrrrooommm ttthhheee ttteeessstttsss...
AAAnnnddd iiinnn cccaaassseee ooofff ttthhheee wwweeettttttiiinnnggg ttteeessstttsss,,, fffooorrr eeexxxaaammmpppllleee,,, mmmoooiiissstttuuurrreee rrreeesssiiissstttaaannnccceee ttteeessstttsss,,, eeeaaaccchhh cccooommmpppooonnneeennnttt
ssshhhaaallllll bbbeee mmmaaadddeee wwwiiipppeee ooorrr dddrrryyy cccooommmpppllleeettteeelllyyy bbbeeefffooorrreee ttthhheee mmmeeeaaasssuuurrreeemmmeeennnttt...
Reliability Test Items
Test
cate-
g o r i e s Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
of sample
A c c e p t -
an c e
n u m b e r
1 High temperature T e s t M e t h o d 1 0 1 5 ( 0 : 1 )
Reverse Bias Test temp. : Ta = 125±5 ℃
(Tj ≦
15 0 ℃)
Bias Voltage : VC = 0.8×VCES
Bias Meth od : Applied DC voltage to C-E
V G E = 0 V
Test duration : 1000hr.
2 High temperature T e s t M e t h o d 1 0 1 5 ( 0 : 1 )
Bias (for gate) Test temp. : Ta = 125±5 ℃
(Tj ≦
15 0 ℃)
Bias Voltage : VC = VGE = +20V or -20V
Bias Meth od : Applied DC voltage to G-E
V C E = 0 V
Test duration : 1000hr.
3 Intermitted ON time : 2 sec. T e s t M e t h o d 1 0 6 5 P<1%
Operating Life OFF time : 18 sec.
(Power cycle) Test temp. : Tj=100±5 deg
( for IGBT ) Tj ≦
150 ℃, Ta=25±5 ℃
N u m b e r o f c y c l e s : 8500 cycles
Endurance Tests
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
10/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
R e l ia b i l i t y T e s t R e s u l t s
T e s t
cate-
g o r i e s Test items
Reference
n o r m s
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
of tes t
sample
N u m b e r
o f f a i l u r e
sample
1 Terminal Strength T e s t M e t h o d 4 0 1 5 0
(Pull test) MethodⅠ
2 Mounting Strength T e s t M e t h o d 4 0 2 5 0
methodⅡ
3 Vibration T e s t M e t h o d 4 0 3 5 0
C o n d i t i o n c o d e B
4 Shock T e s t M e t h o d 4 0 4 5 0
C o n d i t i o n c o d e B
1 High Temperature Storage T e s t M e t h o d 2 0 1 5 0
2 Low Temperature Storage T e s t M e t h o d 2 0 2 5 0
3 Temperature Humidity T e s t M e t h o d 1 0 3 5 0
Storage T e s t c o d e C
4 Temperature Cycle T e s t M e t h o d 1 0 5 5 0
5 Thermal Shock T e s t M e t h o d 3 0 7 5 0
met hod Ⅰ
C o n d i t i o n c o d e A
1 High temperature Reverse Bias T e s t M e t h o d 1 0 1 5 0
2 High temperature Bias T e s t M e t h o d 1 0 1 5 0
( for gate )
3 Intermitted Operating Life T e s t M e t h o d 1 0 6 5 0
(Power cycling)
( for IGBT )
Mechanical Tests
EnvironmentTests
Endurance Tests
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
11/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
0
10
20
30
40
012345
[ Inverter ]
Coll e ctor c ur r en t vs. C oll ec t or-E m itter volt ag e
T j = 2 5 oC (typ.) / chip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
9 V
1 1 V
1 3 V1 5 VV G E = 2 0 V
0
10
20
30
40
0 1 2 3 4 5
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125oC (typ.) / chip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
9V
1 1 V
1 3 V
15V
VGE=20V
0
10
20
30
40
012345
[ Inverter ]
Coll e ctor c ur r en t vs. C oll ec t or-E m itter volt ag e
VG E =1 5V ( t y p. ) / ch i p
C o l le c t or c u rr e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
T j = 2 5 oCT j = 1 2 5 o C
0
2
4
6
8
10
810 12 1 4 16 1 8 2 0 22
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
T j = 2 5 oC (typ.) / chip
Collector - Emitter voltage : VCE [ V ]
Gate - Emitte r vol tage : VGE [ V ]
7.5A
1 5 A
Ic=30A
1 0 0
1000
0 5 10 1 5 20 2 5 3 0 35
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V G E = 0 V , f = 1 M H z , T j = 2 5 oC
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Cies
Cres
Coes
0
100
200
300
400
500
0
5
10
15
20
25
010 20 3 0 40 50 60 70
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=3 00V, Ic= 8A, Tj= 25 oC
Collector - Emitter voltage : VCE [ V ]
Gate-Emittervoltage : VGE [V]
Gat e c h a r g e : Q g [ n C ]
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
12/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
10
1 0 0
1000
51 0 1 5 2 0 25 30 35
[ Inverter ]
Switching time vs. Collector current (typ.)
V c c = 3 0 0 V , V G E = + - 1 5 V , R g = 2 7 0 , Tj= 25oC
Switching time : ton, tr, toff, tf [ nsec ]
C o l l e c t o r c u r r e n t : I c [ A ]
t o n
t f
t o f f
t r
10
1 0 0
1000
51 0 1 5 2 0 25 30 35
[ Inverter ]
Switching t ime vs. Collect or current (typ.)
Vc c = 3 0 0 V, VG E = + - 1 5 V, Rg = 2 7 0 , Tj= 125oC
Switching time : ton, tr, toff, tf [ nsec ]
C o l l e c t o r c u r r e n t : I c [ A ]
t o n
t f
t o f f
t r
10
1 0 0
1000
100 1 0 0 0
[ Inverter ]
Switching time vs. Gate resistance (typ.)
V c c = 3 0 0 V , I c = 1 5 A , V G E = + - 1 5 V , T j = 2 5 oC
Switching time : ton, tr, toff, tf [ nsec ]
Gate resistance : Rg []
to n
t f
t r
to ff
0
1
2
3
4
010 2 0 3 0 40
[ Inverter ]
Switching loss vs. Collector cu rrent (typ.)
V c c = 3 0 0 V , V G E = + - 1 5 V , R g = 2 7 0
Switching loss : Eon, Eoff, Err [ mJ / pulse ]
C o l l e c t o r c u r r e n t : I c [ A ]
E o n 1 2 5 ℃
E o n 2 5 ℃
Eo ff 125℃
E o f f 25℃
Er r 125℃
Er r 25℃
0 . 2
0 . 4
0 . 6
0 . 8
1
1 . 2
100 1 0 0 0
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
V c c = 3 0 0 V , I c = 1 5 A , V G E = + - 1 5 V , T j = 1 2 5 oC
Switching loss : Eon, Eoff, Err [ mJ / pulse ]
Gate resistance : Rg []
E r r
E o f f
E o n
0
10
20
30
40
50
60
0200 4 0 0 600 800
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg=>270 , Tj<=125oC
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
13/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
0 . 1
1
10
1 0 0
-50 05 0 1 0 0 1 5 0 200
[ Thermistor ]
Tempera tu re characteristic (ty p.)
Resistance : R [ ]
Temperat ure [ oC ]
0
10
20
30
40
012345
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
c h i p
Forwardcurrent : IF [A]
Forward on vol tag e : VF [ V ]
Tj=125 oCT j = 2 5 oC
10
1 0 0
51 0 1 5 2 0 25 30 35
[ Inverter ]
R e v e r s e r e c o v e r y c h a r a c t e r i s t i c s ( t y p . )
V c c = 3 0 0 V , V G E = + - 1 5 V , R g = 2 7 0
R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ]
R e v e r s e r e c o v e r y t i m e : t r r [ n s e c ]
Forward curr ent : IF [ A ]
t r r 125℃
I r r 125℃
I r r 25℃
t r r 25℃
0
10
20
30
40
50
00 . 4 0 . 8 1 . 2 1 . 6 2
[ Converter ]
Forward curr ent vs. Forward on volt age (t yp .) / c hip
Forwardcurrent : IF [A]
Forward on voltage : VFM [ V ]
Tj=25 oCT j = 1 2 5 oC
0 . 1
1
10
0 . 0 0 1 0 . 0 1 0 . 1 110
T h e r m a l r e s i s t a n c e ( m a x . )
Thermal resistanse : Rth(j-c) [ o
C / W ]
Pulse width : Pw [ sec ]
F W D [ i n v e r t e r , B r a k e ]
I G B T [inverter]
I G B T [Brake]
C O N V . D i o d e
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
14/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
0
5
10
15
20
25
012345
[ Brake]
Coll ector cu rren t vs . Co llector- Emit t e r vol tag e
T j = 2 5 oC(typ.) / chip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
VGE=20V 1 5 V 13V
11 V
9V
0
5
10
15
20
25
0 1 2 3 4 5
[ Brake ]
Collector current vs. Collector-Emitter voltage
T j = 1 2 5 oC(typ.) / chip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
V G E = 2 0 V
15V
13V
1 1 V
9 V
0
5
10
15
20
25
0 1 2 3 4 5 6
[ Brake ]
Coll ector cu rren t vs . Co llector- Emit t e r vol tag e
VG E =1 5V ( t y p. ) / ch i p
C o l le c t or c u rr e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
T j = 1 2 5 oC
T j = 2 5 oC
0
2
4
6
8
10
510 1 5 2 0 25
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
T j = 2 5 oC (typ.) / chip
C o l l e c t o r - E m i t t e r v o l t a g e : V C E [ V ]
Gate - Emitte r vol tage : VGE [ V ]
5 A
10A
I c = 2 0 A
10
1 0 0
1000
0 5 10 1 5 20 2 5 3 0 35
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
V G E = 0 V , f = 1 M H z , T j = 2 5 oC
Capacitance : Cies, Coes, Cres [ nF ]
Collector - Emitter voltage : VCE [ V ]
Cies
C r e s
Coes
0
100
200
300
400
500
0
5
10
15
20
25
0 5 10 1 5 20 25 3 0 35
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=3 00V, Ic= 4A, Tj= 25 oC
Collector - Emitter voltage : VCE [ V ]
Gate-Emittervoltage : VGE [V]
Gat e c h a r g e : Q g [ n C ]
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
15/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
Warnings
-This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product
may be broken in case of using beyond the ratings.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する
場合があります。
-Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment
from causing secondary destruction, such as fire, its spreading, or explosion.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず
付けて火災，爆発，延焼等の２次破壊を防いでください。
-Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命
を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
-When electric power is connected to equipments, rush current will be flown through rectifying diode to charge
DC capacitor. Guaranteed value of the rush current is specified as I
2
t (non-repetitive), however frequent rush
current through the diode might make it's power cycle destruction occur because of the repetitive power.
In application which has such frequent rush current, well consideration to product life time (i.e. suppressing
the rush current) is necessary.
電源投入時に整流用ダイオードには、コンデンサーを充電する為の突入電流が流れます。この突入電流に対する保証値は
I
2
t(非繰返し)として表記されていますが、この突入電流が頻繁に流れるとI
2
t破壊とは別に整流用ダイオードの繰返し負荷に
よるパワーサイクル耐量破壊を起こす可能性があります。突入電流が頻繁に流れるようなアプリケーションでは、突入電流値
を抑えるなど、製品寿命に十分留意してご使用下さい。
-If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulf urous aci d gas), the product's perform ance and appearance can not be ensured easil y.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。
-Power cycle capability is classif i ed to delta-Tj mode and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product.
In application which has such frequent rise and down of Tc, well consideration of product life time is necessary.
パワーサイクル耐量にはΔTjによる場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による
熱ストレスであり、本製品をご使用する際の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、
製品寿命に十分留意してご使用下さい。
‐Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product.
本製品の実装にあたってはMounting In st r uc t i on s (技術資料No. MT5F14628a) を参照してください。
-Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor
contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。端子の変形により、接触不良などを引き起こす場合があります。
-Use this product with keeping the cooling fin's flatness between screw holes within 50um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limi ts of this specification. Too large convex
of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too
large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will
be worse and over heat destruction may occur.
冷却フィンはネジ取り付け位置間で平坦度を100mmで50um以下、表面の粗さは10um以下 にして 下さい。 過大な凸反り
があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、
本製品と冷却フインの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。
-In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)
素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、
塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。
コ ンパ ウ ン ドを 塗布 する 際 に は、 製 品全 面に コンパウ ンド が広 がっ て い る事 を確 認 して く だ さい 。
(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)
-It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specif ication. Thi s product may be broken if the locus is out of the RBSOA.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊
する可能性があります。
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00814
16/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d .
Cautions
-Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
design, spread-fire-preventive design, and malfunction-protective design.
富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保
のための手段を講じて下さい。
-The application examples described in this specification only explain typical ones that used the Fuji Electric Device
Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、
本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
-The product described in this specification is not designed nor made for being applied to the equipment or
systems used under lif e-threatening situations. W hen you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems, please apply after confirmation
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
-I f e x c e s s i v e s t a t i c e l e c t r i c i t y i s a p p l i e d t o t h e c o n t r o l t e r m i n a l s , t h e d e v i c e s m a y b e b r o k e n . I m p l e m e n t s o m e
countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。
-N e ve r a d d t h e ex c e s s i ve m e c h a n i c a l s t r e s s t o t h e m a i n o r c o n t r o l t e r m i na l s w h en t h e p ro d u c t i s a p pl i e d t o
equipments. The module structure may be broken.
素子を装置に実装する際に、主端子や制御端子に過大な 応力を与えないで下さい。端子構造が破壊する可能性がありま す。
-I n c a s e o f i n s u f f i c i e n t - V G E , e r r o n e o u s t u r n - o n o f I G B T m a y o c c u r . - V G E s h a l l b e s e t e n o u g h v a l u e t o p r e v e n t
this malfunction. (Recommended value : -VGE = -15V)
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさな い為に- VGEは十分な 値で
設定して下さい。 （推奨値:-VGE=-15V)
-I n c a s e o f h i g h e r t u r n - o n d v / d t o f I G B T , e r r o n e o u s t u r n - o n o f o p p o s i t e a r m I G B T m a y o c c u r . U s e t h i s p r o d u c t i n
the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
ターンオン d v / d t が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ
条件（+VGE, -VGE, RG等）で ご使用下さい。
-T h i s p r o d u c t m a y b e b r o k e n b y a v a l a n c h e i n c a s e o f V C E b e y o n d m a x i m u m r a t i n g V C E S i s a p p l i e d b e t w e e n
C - E t e r m i n a l s . U s e t h i s p r od u c t w i t h i n i t s a b s ol u t e m a x i m u m vo l t a g e .
V C ES を超 え た 電 圧 が 印 加 さ れ た 場 合、 ア バ ラ ンシ ェを起 こし て 素 子 破 壊 する 場 合 があ り ま す 。 V C E は 必ず絶 対 定 格 の 範 囲内
でご使用下さい。
-Control th e surge vo ltage b y addin g ap r o t e c t i o n circuit(=snubber circuit)t o t h e IGBT. Use afilmcapacitor
i n t h e snubber circuit,and th e n set i t neart h e IGBT in orderto b i p a s s highfrequency surge currents.
I G BT に 保 護 回 路 ( = ス ナ バ 回 路 ) を付 け て サ ージ 電 圧 を吸 収 さ せ て く だ さ い 。 ス ナ バ 回 路 の コン デン サ に は フィ ル ム コ ン デ ン サ
を 用 い 、 I G B T の 近 く に 配 置 し て 高 周 波 サ ー ジ 電 圧 を 吸 収 す る 手 段 を 講 じ て く だ さ い 。
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
