SAMSUNG SEMICONDUCTOR - INC BCX70H wueo ff 24b4L42 Ooa7224:? ff NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbo} Rating Unit Collector-Base Voltage Veso 45 v Collector-Emitter Voltage Veeo 45 v _Emitter-Base Voltage Veso Vv Collector Current 200 mA Collector Dissipation 350 mw Storage: Temperature Tstg 150 G * Refer to MMBT3904 for graphs ELECTRICAL CHARACTERISTICS (T, =25C) . T~24- IA SOT-23 1, Base 2. Emitter 3, Collector Characteristic Symbol Test Condition Min Max Unit Collector-Emitter Breakdown Voltage | BVceo Ic=2.0MA, Is=0 45 Vv Emitter-Base Breakdown Voltage BVeso fe=1.0nA, =O 5 Vv Collector Cutoff Current lees Vce=32V, Vee=O 20 nA Emitter Cutoff Current leeo Vea=4V, tc=0 20 nA DG Current Gain Hee Vee=5V, lo=10nA 20 . Ver=5V, Ile=2.0mA 180 310 Vce=1V, Ic=50mA 70 Collector-Emitter Saturation Voltage Vee (Sat) | k= 10mA, lp=0,.25mA 0.35 Vv . ; l =50mA. In=1.25mA 0.55 v Base-Emitter Saturation Voltage Vee (sat) Ic =50mA, !ls=0.25mA 0.6 0.85 Vv : . b lc=50mA, b=1-25mA 0.7 1.05 Vv Base-Emitter On Voltage Vae (on) lce=2.0MA, Vce=5V 0.55 0.75 Vv Current Gain-Bandwidth Product f; Ic=10mA, Vce=5V 125 MHz f=1MHz Output Capacitance Cob Ves=10V, l:=0 4.6 pF f= 100 MHz . - Noise Figure NF Vce=5V, Ile=0.2mA 6 dB -- Rs=2KQ, f=1KHz _ | Turn On Time ton lc=10mA, Is1.=1,.0MA 150 ns ~ + | Turn Off Time toff - Vep=3.6V, lp2=1.0mA 800 ns R,=R,=5KA, RL=9900 Marking FY AH = CH SAMSUNG SEMICONDUCTOR 491 Na,