1N5820-1N5822
1N5820-1N5822, Rev. C2001 Fairchild Semiconductor Corporation
1N5820 - 1N5822
Schottky Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Features
3.0 ampere operation at TA = 95°C
with no thermal runaway.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
Symbol
Parameter
Device
Units
1N5820 1N5821 1N5822
VF Forward Voltage @ 3.0 A
@ 9.4 A 475
850 500
900 525
950 mV
mV
IR Reverse Current @ rated VR TA = 25°C
TA = 100°C 0.5
20 mA
mA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 190 pF
Thermal Characteristics
Symbol
Parameter
Value
Units
1N5820 1N5821 1N5822
VRRM Maximum Repetitive Reverse Voltage 20 30 40 V
IF(AV) Average Rectified Forward Current
3/8 " lead length @ TA = 95°C 3.0 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 80 A
Tstg Storage Temperature Range -65 to +125 °C
TJ Operating Junction Temperature -65 to +125 °C
DO-201AD
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
PD Power Dissipation 3.6 W
RθJA Thermal Resistance, Junction to Ambient 28 °C/W
1N5820-1N5822
1N5820-1N5822, Rev. C2001 Fairchild Semiconductor Corporation
Schottky Rectifiers
(continued)
Typical Characteristics
5 10152025303540
0.01
0.1
1
10
100
Reverse Voltage, VR [V]
Reverse Current, IR [mA]
T = 125 C
º
J
T = 75 C
º
J
T = 25 C
º
J
1N582 0
1N582 2
1N582 1
0 20 40 60 80 100 120 140
0
1
2
3
4
Lead Temperature C]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" 9.5 mm LEAD
LENGTHS
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0.1
1
10
20
Forward Voltage, VF [V]
Forward Current, IF [A]
Pulse Widt h = 200µ
µµ
µS
T = 25 C
º
J 1N582 0
1N582 2
1N582 1
0.1 0.4 1 4 10 40 100
10
20
40
60
80
100
200
400
600
800
1000
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
12 51020 50100
10
20
30
40
50
60
70
80
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
8.3ms Single Half Sine-Wave
JEDEC Method
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
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