Page1
Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com
Case: Molded Plastic
Terminals: Plated Leads Solderable Per MIL
STD-202, Method 208
Weight: 1.7 grams (approx.)
Mounting position: Any
Mechanical Data:
Maximum Ratings and Electrical Characteristics
Diffused Junction
Low Forward Voltage Drop
High Reliability
High Current Capability
High Surge Current Capability
Ideal for Printed Circuit Boards
Features:
Reverse Voltage: 50 ~ 1000 Volts
Forward Current: 2.0 Amp
KBP200-G thru 2010-G (RoHS Device)
Silicon Bridge Rectifiers
“-G” suffix designated RoHS compliant version
Dim
A
B
C
D
E
G
H
J
I
Min.
14.22
10.67
11.68
4.57
3.60
2.16
12.70
0.76
1.52
Max
15.24
11.68
12.70
5.08
4.10
2.67
-
0.88
KBP
All Dimension in mm
D
G
EI
A
B
J
C
H
+ ~ ~ -
KBP
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate currently by 20%.
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note1) @ TA = 50ºC
Non-Repetitive Peak Forward Surge Current 8.3ms Single
half-sine-wave superimposed on rated load (JEDEC
Method)
Forward Voltage (per element) @ IF=2.0A
Peak Reverse Current @ TA=25ºC
At Rated DC Blocking Voltage @ TA=100ºC
Rating for Fusing (t<8.3ms)
Typical Thermal Resistance (Note3)
Operating and Storage Temperature Range
Typical Junction Capacitance per element (Note2)
KBP
200-G
50
35
KBP
201-G
100
70
KBP
202-G
200
140
KBP
204-G
400
280
2.0
60
1.1
10
500
15
30
-55 to +160
25
UNIT
V
V
A
A
V
uA
A2S
K/W
ºC
pF
Symbol
VRRM
VRWM
VR
VR(RMS)
Io
IFSM
VFM
IRM
I2t
R
θJA
T
J
, T
STG
C
J
KBP
206-G
600
420
KBP
208-G
800
560
KBP
2010-G
1000
700
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.
Page2
Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com
0 75 150 225
2.0
1.5
1.0
0.5
0
Io, Average Rectified Current (A)
T, Temperature (ºC)
Flg1. Forward Current Derating Curve
10
1.0
0.1
0
Io, Instantaneous Fwd Current (A)
VF, Instantaneous Fwd Voltage (V)
Flg2. Typical Fwd Characteristics
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1 10 100 1 10 100
100
80
60
40
20
0
IFSM, Peak Fwd Surge Current (A)
Number of Cycles At 60Hz
Flg3. Max Non-Repetitive Peak Fwd Surge Current
100
10
1
IJ, Junction Capacitance (pF)
VR, Reverse Voltage (V)
Flg 4. Typical Junction Capacitance
TJ=25ºC
TJ = 25ºC
TJ = 150ºC
Pulse Width
=300 uS
TJ=150ºC
Single Half
Sine Wave
(JEDEC Nethod)
Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G)
KBP200-G thru 2010-G (RoHS Device)
Silicon Bridge Rectifiers
“-G” suffix designated RoHS compliant version
Page3
Comhip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com
0 20 40 60 80 100 120 140
10,000
1000
100
10
1.0
0.1
0.01
IR, Instantaneous Reverse Current (mA) (A)
Percent of Rated Peak Reverse Voltage (%)
Flg5. Typical Reverse Characteristics
Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G)
TJ = 150ºC
TJ = 125ºC
TJ = 25ºC
TJ = 100ºC
KBP200-G thru 2010-G (RoHS Device)
Silicon Bridge Rectifiers
“-G” suffix designated RoHS compliant version
