Publication date: March 2011 Ver. CED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM76123
Silicon P-channel MOS FET
For load switch circuits
For switching circuits
Overview
MTM76123 is the low on-resistance P-channel MOS FET designed for load
switch circuits.
Features
Low drain-source ON resistance: RDS(on) typ. = 36 mW (VGS = –4.0 V)
Small size surface mounting package: WSMini6-F1-B (2.1 mm × 2.0 mm × 0.7 mm)
Low drive voltage: 2.5 V drive
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Drain-source surrender voltage VDSS –20 V
Gate-source surrender voltage VGSS ±10 V
Drain current ID–3.0 A
Peak drain current *1IDP –16 A
Power dissipation *2PD700 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note) *1: Measuring on ceramic substrate at 40 mm × 38 mm × 0.1 mm
Absolute maximum rating without heat sink for PD is 150 mA
*2: Pulse width ≤ 10 µs, Duty Cycle ≤ 1%
Package
Code
WSMini6-F1-B
Pin Name
1: Drain 4: Source
2: Drain 5: Drain
3: Gate 6: Drain
Marking Symbol: 9C
Internal Connection
3
(G)
(S)
4
1
(D) 2
(D)
(D)
6(D)
5
MTM76123
2 Ver. CED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = –1 mA, VGS = 0 –20 V
Drain-source cutoff current IDSS VDS = –20 V, VGS = 0 –1.0 µA
Gate-source cutoff current IGSS VGS = ±8 V, VDS = 0 ±10 µA
Gate threshold voltage VTH ID = –1.0 mA, VDS = –10 V – 0.4 – 0.85 –1.3 V
Drain-source ON resistance *1RDS(on)
ID = –1 A, VGS = –4.0 V 36 55
mW
ID = – 0.5 A, VGS = –2.5 V 42 70
Forward transfer admittance *1YfsID = –1.0 A, VDS = –10 V, f = 1 MHz 3.5 S
Short-circuit input capacitance (Common source)
Ciss
VDS = –10 V, VGS = 0, f = 1 MHz
1
000 pF
Short-circuit output capacitance (Common source)
Coss 100 pF
Reverse transfer capacitance (Common source)
Crss 100 pF
Turn-on time *2ton
VDD = –10 V, VGS = 0 V to –4 V, ID = –1 A
30 ns
Turn-off time *2toff
VDD = –10 V, VGS = –4 V to 0 V, ID = –1 A
250 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement: Pulse width < 300 µs, Duty Cycle < 2.0%
*2: ton , toff measurement circuit
VCC = −10 V
PW = 10 µs
Duty Cycle ≤ 1% ID = 1 A
RL = 10 Ω
VOUT
VIN
D
G
S
VIN
50 Ω
td(on) td(off)
0 V
−4 V VIN
VOUT
10%
90%
90%
10%
MTM76123
4 Ver. CED
This product complies with the RoHS Directive (EU 2002/95/EC).
WSMini6-F1-B Unit: mm
+0.05
−0.02
2.00 ±0.10
1.30 ±0.10
(0.65) (0.65)
2.10 ±0.10
(0.20)
1.70 ±0.10
0.70 ±0.10
6-0.20 +0.05
−0.03
0.13
6 5 4
1 2 3
0 to 0.10
5°
5°
(0.15)
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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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