HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200204
Issued Date : 2000.08.01
Revised Date : 2002. 01.18
Page No. : 1/3
HTIP117 HSMC Product Specification
HTIP117
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP117 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Tempera ture........................................................................................................ -55 ~ +150 °C
Juncti on Tempe rature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 50 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ............................................................................................... -100 V
BVCEO Collector to Emitter Voltag e............................................................................................ -100 V
BVEBO Emitter to Base Voltage...................................................................................................... -5 V
IC Collector Current (Continue)........................................................................................................ -4 A
IC Collector Current (Peak).............................................................................................................. -6 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -100 - - V IC=-1mA
BVCEO -100 - - V IC=-30mA
ICBO - - -1 mA VCB=-100V
ICEO - - -2 mA VCE=-50V
IEBO - - -2 mA VEB=-5V
*VCE(sat) - - -2.5 V IC=-2A, IB=-8mA
*VBE(on) - - -2. 8 V I C= -2A, VCE=-4V
*hFE1 1 - - K IC=-1A, VCE=-4V
*hFE2 500 - - IC=-2A, VCE=-4V
Cob - - 200 pF VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
R2R1
C
E
B
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200204
Issued Date : 2000.08.01
Revised Date : 2002.01.18
Page No. : 2/3
HTIP117 HSMC Product Specificat i on
Characteristics Curve
Switch in g Time & Col lector Curren t
0.1
1
10
110
Coll e c tor Cur rent -I
C
(A)
Sw itchin g Time (us )
V
CC
=30V, I
C
=250I
B1
= -250I
B2
Tstg
Tf
Ton
Capa citance & Revi erse-Biased Voltage
10
100
1000
0.1 1 10 100
Re ver se- Biased Voltage ( V)
Capacitance ( p F)
Cob
S afe Operatin g Area
1
10
100
1000
10000
100000
1 10 100
Forward Voltage-VCE (V)
Collector Current-IC (mA)
PT=1ms
PT=100ms
PT=1s
Curren t Gain & Collect or Cur ren t
1
10
100
1000
10000
100000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
hFE
25
o
C
125
o
C
75
o
C
hFE @ V
CE
=4V
Satur ation Volta ge & C ol lcetor Cu rr ent
100
1000
10000
100 1000 10000
Collector Current I
C
(mA)
Saturation Voltage (mV)
V
CE(sat)
@ I
C
=250I
B
25
o
C
75
o
C
125
o
C
ON Voltage & Collector Current
100
1000
10000
1 10 100 1000 10000
Coll e c tor Cur rent I
C
(mA)
O N Volt age ( m V)
25
o
C
125
o
C
75
o
C
V
BE(ON)
@ V
CE
=4V
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200204
Issued Date : 2000.08.01
Revised Date : 2002.01.18
Page No. : 3/3
HTIP117 HSMC Product Specificat i on
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the mini mum thickness of base material.
4.If there is any questi on with packi ng specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 All oy; sol der plating
• Mold Compound: Epoxy resin fam ily, fl ammabi lity solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without t he prior writt en approval of HSMC.
• HSMC reserves the right to mak e changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, inf ri ngement of patents, or appl ication assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectroni cs Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
AB
E
G
IK
M
OP
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Pac k age
HSMC Package Code: E
Marking:
Date Code Control Code
HTIP
117
