NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC300 mA
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 400 V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus) 400 V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off
Current
ICBO 100 nA VCB
=320V
Collector Cut-Off
Current
ICES 100 nA VCE=320V
Emitter Cut-Off Current IEBO 100 nA VEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.2
0.5
V
V
IC=20mA, IB=2mA
IC=50mA, IB=6mA
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 V IC=50mA, IB=5mA
Base-Emitter
Turn On Voltage
VBE(on) 0.9 V IC=50mA, VCE
=10V
Static Forward Current
Transfer Ratio
hFE 100
100
15
300
IC=1mA, VCE
=10V
IC=50mA, VCE
=10V
IC=100mA, VCE
=10V*
Transition Frequency fT50 MHz IC=10mA, VCE
=20V
f=20MHz
Collector-Base
Breakdown Voltage
Cobo 5pFV
CB
=20V, f=1MHz
E-Line
TO92 Compatible
3-182
ZTX458
C
B
E
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
Tamb=25°C
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC V
BE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
h
FE
- Normalised Gain
V
BE(sat)
- (Volts)
V
BE
- (Volts)
I
C
- Collector Current (Amps)
IC/IB=50
IC/IB=10
VCE=10V
VCE=10V
300
200
100
VCE - Collector Voltage (Volts)
Safe O peratin g Are a
100110
0.001
0.01
0.1
1.0 Single Pulse Test at Tamb=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001 0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
IC/IB=10
0.001
0.001
IC/IB=20
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
IC/IB=10
0.001
1000
ZTX458
3-183
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC300 mA
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 400 V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus) 400 V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off
Current
ICBO 100 nA VCB
=320V
Collector Cut-Off
Current
ICES 100 nA VCE=320V
Emitter Cut-Off Current IEBO 100 nA VEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.2
0.5
V
V
IC=20mA, IB=2mA
IC=50mA, IB=6mA
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 V IC=50mA, IB=5mA
Base-Emitter
Turn On Voltage
VBE(on) 0.9 V IC=50mA, VCE
=10V
Static Forward Current
Transfer Ratio
hFE 100
100
15
300
IC=1mA, VCE
=10V
IC=50mA, VCE
=10V
IC=100mA, VCE
=10V*
Transition Frequency fT50 MHz IC=10mA, VCE
=20V
f=20MHz
Collector-Base
Breakdown Voltage
Cobo 5pFV
CB
=20V, f=1MHz
E-Line
TO92 Compatible
3-182
ZTX458
C
B
E
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
Tamb=25°C
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC V
BE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
h
FE
- Normalised Gain
V
BE(sat)
- (Volts)
V
BE
- (Volts)
I
C
- Collector Current (Amps)
IC/IB=50
IC/IB=10
VCE=10V
VCE=10V
300
200
100
VCE - Collector Voltage (Volts)
Safe O peratin g Are a
100110
0.001
0.01
0.1
1.0 Single Pulse Test at Tamb=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001 0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
IC/IB=10
0.001
0.001
IC/IB=20
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
IC/IB=10
0.001
1000
ZTX458
3-183
