CPH3239 Ordering number : ENN7723A CPH3239 NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications * Relay drivers, lamp drivers, motor drivers, flash. Features * * * * * * * Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. Narrow hFE range. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 100 V Collector-to-Emitter Voltage VCES 100 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V 5 A 7 A Base Current IC ICP IB Collector Dissipation PC Collector Current Collector Current (Pulse) Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (600mm20.8mm) 1.2 A 0.9 W 150 C --55 to +150 C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM / D0503 TS IM TA-100852 No.7723-1/4 CPH3239 Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Gain-Bandwidth Product VCE=2V, IC=500mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage VCE(sat) VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Fall Time Unit max 250 0.1 A 0.1 A 400 330 MHz VCB=10V, f=1MHz 26 IC=2A, IB=40mA IC=2A, IB=40mA 85 130 mV 0.80 1.2 V IC=10A, IE=0 IC=100A, RBE= pF 100 V 100 V IC=1mA, RBE= IE=10A, IC=0 See specified Test Circuit ton tstg tf Storage Time typ VCE=10V, IC=500mA Cob Collector-to-Emitter Saturation Voltage min VCB=40V, IE=0 VEB=4V, IC=0 fT Output Capacitance Ratings Conditions 50 V 6 V 32 ns See specified Test Circuit 420 ns See specified Test Circuit 28 ns Marking : DK Package Dimensions Switching Time Test Circuit unit : mmm 2150A 2.9 0.4 IB1 IB2 2 2.8 RB RL VR + + 50 0.6 1.6 0.05 1 OUTPUT INPUT 0.6 3 PW=20s D.C.1% 0.2 0.15 100F 1.9 0.7 0.9 0.2 1 : Base 2 : Emitter 3 : Collector 470F VBE= --5V VCC=25V IC= --20IB1= 20IB2=2.5A SANYO : CPH3 IC -- VCE IC -- VBE 5.0 VCE=2V 60mA 4.5 3.5 20mA 3.0 15mA 2.5 10mA 8mA 2.0 6mA 1.5 4mA 1.0 4.0 3.5 3.0 2.5 2.0 --25C 4.0 Ta=75 C 40mA Collector Current, IC -- A Collector Current, IC -- A 4.5 25C 5.0 1.5 1.0 2mA 0.5 0.5 IB=0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector-to-Emitter Voltage, VCE -- V 0.9 0 1.0 IT06830 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Base-to-Emitter Voltage, VBE -- V 0.9 1.0 IT06831 No.7723-2/4 CPH3239 hFE -- IC 1000 7 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 5 DC Current Gain, hFE VCE(sat) -- IC 3 VCE=2V Ta=75C 3 25C 2 --25C 100 7 5 3 2 0.1 7 5 C 75 3 = Ta 2 5 --2 C 25 C 0.01 7 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 0.1 7 5 5C 7 Ta= 3 C 5 5C 2 --2 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Gain-Brandwidth Product, f T -- MHz 5 3 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 10 m 10 1.0 7 5 s s 0m s 3 2 0.1 7 5 3 2 0.01 DC operation Ta=25C Single pulse Mounted on a ceramic board(600mm20.8mm) 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 10 IT06833 2 Ta= --25C 1.0 7 5 75C 25C 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT06835 f T -- IC VCE=10V 7 5 3 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT06837 PC -- Ta 0.9 Collector Dissipation, PC -- W 2 1m 2 Collector Current, IC -- A 10s s s 0 0 50 Collector Current, IC -- A ICP=7A IC=5A 7 1.0 3 1.0 10 3 5 5 10 0.01 5 7 100 IT06836 ASO 10 7 5 3 IC / IB=50 1000 f=1MHz 7 2 Collector Current, IC -- A Cob -- VCB 100 7 0.1 VBE(sat) -- IC 0.1 0.01 5 7 10 IT06834 Collector Current, IC -- A 5 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 3 10 IC / IB=50 3 2 Collector Current, IC -- A VCE(sat) -- IC 5 Output Capacitance, Cob -- pF 5 0.01 5 7 10 IT06832 M ou nt 0.8 ed on ac er 0.6 am ic bo ar d( 60 0m 0.4 m2 0. 8m m ) 0.2 0 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT06838 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT06839 No.7723-3/4 CPH3239 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. PS No.7723-4/4