SQM47N10-24L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) * TrenchFET(R) power MOSFET 100 RDS(on) () at VGS = 10 V 0.024 RDS(on) () at VGS = 4.5 V 0.027 ID (A) * Package with low thermal resistance * AEC-Q101 qualified c * 100 % Rg and UIS tested 47 Configuration * Material categorization for definitions of compliance please see www.vishay.com/doc?99912 Single Package TO-263 D TO-263 G S S D Top View G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS 20 Continuous Drain Current TC = 25 C TC = 125 C Continuous Source Current (Diode Conduction) ID 27 47 Pulsed Drain Current a IDM 189 Single Pulse Avalanche Current IAS 43 EAS 92 Maximum Power Dissipation a L = 0.1 mH TC = 25 C TC = 125 C Operating Junction and Storage Temperature Range PD V 47 IS Single Pulse Avalanche Energy UNIT 136 45 A mJ W TJ, Tstg -55 to +175 C SYMBOL LIMIT UNIT RthJA 40 RthJC 1.1 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount b C/W Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. S15-1874-Rev. D, 10-Aug-15 Document Number: 64711 1 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM47N10-24L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 A 100 - - VGS(th) VDS = VGS, ID = 250 A 1.5 2.0 2.5 VDS = 0 V, VGS = 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IGSS IDSS ID(on) RDS(on) gfs - - 100 VGS = 0 V VDS = 100 V - - 1 VGS = 0 V VDS = 100 V, TJ = 125 C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 C - - 250 VGS = 10 V VDS 5 V 120 - - VGS = 10 V ID = 40 A - 0.017 0.024 VGS = 10 V ID = 40 A, TJ = 125 C - - 0.048 VGS = 10 V ID = 40 A, TJ = 175 C - - 0.061 VGS = 4.5 V ID = 20 A VDS = 15 V, ID = 40 A - 0.020 0.027 - 85 - V nA A A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 50 V, ID = 40 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = 50 V, RL = 1.06 ID 47 A, VGEN = 10 V, Rg = 1 tf - 2893 3620 - 321 400 - 126 160 - 48 72 - 10 - - 10 - 0.4 1 3.5 - 10 15 pF nC - 6 9 - 32 48 - 6 9 - - 189 A - 0.85 1.5 V ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 40 A, VGS = 0 Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1874-Rev. D, 10-Aug-15 Document Number: 64711 2 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM47N10-24L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 120 160 100 V GS = 10 V thru 5 V ID - Drain Current (A) ID - Drain Current (A) 120 V GS = 4 V 80 80 60 40 T C = 25 C 40 20 T C = 125 C V GS = 3 V T C = - 55 C 0 0 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) 0 20 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 120 0.08 RDS(on) - On-Resistance () 0.10 g fs - Transconductance (S) 150 T C = - 55 C 5 T C = 25 C 90 60 T C = 125 C 0.06 0.04 V GS = 4.5 V 0.02 30 V GS = 10 V 0 0 0 ID - Drain Current (A) 40 60 80 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 14 28 42 56 0 70 100 120 10 VGS - Gate-to-Source Voltage (V) 5000 4000 C - Capacitance (pF) 20 Ciss 3000 2000 1000 Crss Coss ID = 40 A 8 V DS = 50 V 6 4 2 0 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance S15-1874-Rev. D, 10-Aug-15 100 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge Document Number: 64711 3 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM47N10-24L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) 100 ID = 40 A 2.5 10 V GS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 3.0 2.0 1.5 1.0 T J = 150 C 1 T J = 25 C 0.1 0.01 0.5 0 - 50 0.001 - 25 0 25 50 75 100 125 TJ - Junction Temperature (C) 150 0 175 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 Source Drain Diode Forward Voltage 0.15 0.5 0.12 0.1 VGS(th) Variance (V) RDS(on) - On-Resistance () On-Resistance vs. Junction Temperature 0.2 0.09 0.06 T J = 150 C - 0.3 ID = 5 mA - 0.7 ID = 250 A 0.03 - 1.1 T J = 25 C 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 - 1.5 - 50 - 25 0 On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (C) 125 150 175 Threshold Voltage 130 VDS - Drain-to-Source Voltage (V) ID = 10 mA 124 118 112 106 100 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (C) 150 175 Drain Source Breakdown vs. Junction Temperature S15-1874-Rev. D, 10-Aug-15 Document Number: 64711 4 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM47N10-24L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 100 IDM Limited I D - Drain Current (A) Limited by RDS(on)* 100 s 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 C Single Pulse BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1874-Rev. D, 10-Aug-15 Document Number: 64711 5 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM47N10-24L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64711. S15-1874-Rev. D, 10-Aug-15 Document Number: 64711 6 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM47N10-24L www.vishay.com REVISION HISTORY REVISION D a DATE 04-Aug-15 Vishay Siliconix DESCRIPTION OF CHANGE * Revised Rg minimum limit Note a. As of April 2014 S15-1874-Rev. D, 10-Aug-15 Document Number: 64711 7 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail "A" E2 0.010 M A M 2 PL 0 L4 -5 INCHES L1 DETAIL A (ROTATED 90) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SQM47N10-24L-GE3 SQM47N10-24L_GE3