SQM47N10-24L
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S15-1874-Rev. D, 10-Aug-15 1Document Number: 64711
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Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified c
• 100 % Rg and UIS tested
• Material categorization
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
VDS (V) 100
RDS(on) (Ω) at VGS = 10 V 0.024
RDS(on) (Ω) at VGS = 4.5 V 0.027
ID (A) 47
Configuration Single
Package TO-263
D
G
S
N-Channel MOSFET
TO-263
Top View G
D
S
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
47
A
TC = 125 °C 27
Continuous Source Current (Diode Conduction) IS47
Pulsed Drain Current aIDM 189
Single Pulse Avalanche Current L = 0.1 mH IAS 43
Single Pulse Avalanche Energy EAS 92 mJ
Maximum Power Dissipation aTC = 25 °C PD
136 W
TC = 125 °C 45
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount b RthJA 40 °C/W
Junction-to-Case (Drain) RthJC 1.1
SQM47N10-24L
www.vishay.com Vishay Siliconix
S15-1874-Rev. D, 10-Aug-15 2Document Number: 64711
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 100 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 100 V - - 1
μA VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 100 V, TJ = 175 °C - - 250
On-State Drain Current a I
D(on) V
GS = 10 V VDS ≥ 5 V 120 - - A
Drain-Source On-State Resistance a R
DS(on)
VGS = 10 V ID = 40 A - 0.017 0.024
Ω
VGS = 10 V ID = 40 A, TJ = 125 °C - - 0.048
VGS = 10 V ID = 40 A, TJ = 175 °C - - 0.061
VGS = 4.5 V ID = 20 A - 0.020 0.027
Forward Transconductance b gfs VDS = 15 V, ID = 40 A - 85 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = 25 V, f = 1 MHz
- 2893 3620
pF Output Capacitance Coss - 321 400
Reverse Transfer Capacitance Crss - 126 160
Total Gate Charge c Qg
VGS = 10 V VDS = 50 V, ID = 40 A
-4872
nC Gate-Source Charge c Qgs -10-
Gate-Drain Charge c Qgd -10-
Gate Resistance Rgf = 1 MHz 0.4 1 3.5 Ω
Turn-On Delay Time c td(on)
VDD = 50 V, RL = 1.06 Ω
ID ≅ 47 A, VGEN = 10 V, Rg = 1 Ω
-1015
ns
Rise Time c tr -69
Turn-Off Delay Time c td(off) -3248
Fall Time c tf -69
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM --189A
Forward Voltage VSD IF = 40 A, VGS = 0 - 0.85 1.5 V
SQM47N10-24L
www.vishay.com Vishay Siliconix
S15-1874-Rev. D, 10-Aug-15 3Document Number: 64711
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
40
80
120
160
048121620
VGS =10Vthru5V
VGS =3V
VGS =4V
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
0
30
60
90
120
150
0 1428425670
ID- Drain Current (A)
- Transconductance (S)
gfs
TC= 125 °C
TC= 25 °C
TC= - 55 °C
0
1000
2000
3000
4000
5000
0 20406080100
Ciss
Coss
Crss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
20
40
60
80
100
120
012345
TC= 125 °C
TC= 25 °C
TC= - 55 °C
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
0
0.02
0.04
0.06
0.08
0.10
0 20406080100120
VGS =4.5V
VGS =10V
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
0
2
4
6
8
10
0 1020304050
ID=40A
VDS=50V
Qg - Total Gate Charge (nC)
VGS - Gate-to-Source Voltage (V)
SQM47N10-24L
www.vishay.com Vishay Siliconix
S15-1874-Rev. D, 10-Aug-15 4Document Number: 64711
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125 150 175
ID=40A
VGS =10V
TJ - Junction Temperature (°C)
(Normalized)
RDS(on) - On-Resistance
0
0.03
0.06
0.09
0.12
0.15
0246810
TJ= 25 °C
TJ= 150 °C
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
VSD - Source-to-Drain Voltage (V)
IS - Source Current (A)
- 1.5
- 1.1
- 0.7
- 0.3
0.1
0.5
- 50 - 25 0 25 50 75 100 125 150 175
ID=5mA
ID= 250 μA
VGS(th) Variance (V)
TJ - Temperature (°C)
100
106
112
118
124
130
- 50 - 25 0 25 50 75 100 125 150 175
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
ID=10mA
SQM47N10-24L
www.vishay.com Vishay Siliconix
S15-1874-Rev. D, 10-Aug-15 5Document Number: 64711
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
- Drain Current (A)ID
TC = 25 °C
Single Pulse
10 ms
1 ms
RDS(on)*
Limited by
100 ms, 1 s, 10 s, DC
0.01
0.1
1
10
100
BVDSS Limited
100 µs
0.01 0.1 1 10 100
IDM Limited
10-4 10-3 10-2 10-1 1 10 100 1000
1
0.01
0.001
0.1
0.0001
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
SQM47N10-24L
www.vishay.com Vishay Siliconix
S15-1874-Rev. D, 10-Aug-15 6Document Number: 64711
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64711.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 110
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
30
0.05
0.02
Single Pulse
SQM47N10-24L
www.vishay.com Vishay Siliconix
S15-1874-Rev. D, 10-Aug-15 7Document Number: 64711
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. As of April 2014
REVISION HISTORY a
REVISION DATE DESCRIPTION OF CHANGE
D 04-Aug-15 • Revised Rg minimum limit
Package Information
www.vishay.com Vishay Siliconix
Revison: 30-Sep-13 1Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-263 (D2PAK): 3-LEAD
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
-A-
-B-
D1 D4
AA
eb2
b
EAc2
c
L2
D
L3
L
Detail “A”
E1
E2
K
E3
D2
D3
6
0.010 M A M
2 PL
DETAIL A (ROTATED 90°)
SECTION A-A
0° - 5°
L1
L4
M
c1
c
b1
b
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.160 0.190 4.064 4.826
b 0.020 0.039 0.508 0.990
b1 0.020 0.035 0.508 0.889
b2 0.045 0.055 1.143 1.397
c* Thin lead 0.013 0.018 0.330 0.457
Thick lead 0.023 0.028 0.584 0.711
c1 Thin lead 0.013 0.017 0.330 0.431
Thick lead 0.023 0.027 0.584 0.685
c2 0.045 0.055 1.143 1.397
D 0.340 0.380 8.636 9.652
D1 0.220 0.240 5.588 6.096
D2 0.038 0.042 0.965 1.067
D3 0.045 0.055 1.143 1.397
D4 0.044 0.052 1.118 1.321
E 0.380 0.410 9.652 10.414
E1 0.245 - 6.223 -
E2 0.355 0.375 9.017 9.525
E3 0.072 0.078 1.829 1.981
e 0.100 BSC 2.54 BSC
K 0.045 0.055 1.143 1.397
L 0.575 0.625 14.605 15.875
L1 0.090 0.110 2.286 2.794
L2 0.040 0.055 1.016 1.397
L3 0.050 0.070 1.270 1.778
L4 0.010 BSC 0.254 BSC
M - 0.002 - 0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
AN826
Vishay Siliconix
Document Number: 73397
11-Apr-05
www.vishay.com
1
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.635
(16.129)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.420
(10.668)
0.355
(9.017)
0.145
(3.683)
0.135
(3.429)
0.200
(5.080)
0.050
(1.257)
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Revision: 08-Feb-17 1Document Number: 91000
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